IPB051N15NM6ATMA1 vs IPB110P06LMATMA1 Comparison
Detailed side-by-side comparison of IPB051N15NM6ATMA1 by Infineon and IPB110P06LMATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB051N15NM6ATMA1 - 150V 5.1mOhm OptiMOS 6 N-Channel MOSFET | Infineon
IPB051N15NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IPB051N15NM6ATMA1 | IPB110P06LMATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.02 | $1.31 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 6 | β |
| FET Type | N-Channel | P-Channel |
| Drain-Source Voltage (VDS) | 150 V | -60 V |
| Continuous Drain Current (ID) at TA=25C | 18 A | β |
| Continuous Drain Current (ID) at TC=25C | 139 A | -100 A |
| RDS(on) Typical at VGS=10 V | 5.1 mOhm | β |
| Gate Charge (Qg) Typical | 51 nC | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| Power Dissipation (PD) at TC=25C | 234 W | β |
| Operating Temperature Range | -55C to +175C | -55 C to +175 C (TJ) |
| Package / Case | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Drain, Source, Gate) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Avalanche Rated | Yes | β |
| Technology | β | OptiMOS (trench MOSFET) |
| Maximum Power Dissipation (PD) at TC=25C | β | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | β | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | β | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | β | +/-20 V |
| Supplier Device Package | β | PG-TO263-3-2 |
| Gate Drive Level | β | Logic-level compatible |
| Lead-Free | β | Yes |