IPB051N15NM6ATMA1 - 150V 5.1mOhm OptiMOS 6 N-Channel MOSFET | Infineon
MPN: IPB051N15NM6ATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.42 | $34.20 |
| 100 | $2.78 | $278.00 |
| 500 | $2.31 | $1,155.00 |
| 1,000 | $2.02 | $2,020.00 |
IPB051N15NM6ATMA1 Overview
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch designed to handle high current and high voltage in power conversion circuits. The 'power' variant differs from small-signal MOSFETs by offering very low on-resistance (RDS(on)) and high drain current capability, enabling efficient switching in DC-DC converters, motor drives, and synchronous rectifiers. MOSFETs sit within the discrete semiconductor hierarchy: transistor -> power transistor -> power MOSFET -> N-channel enhancement-mode MOSFET.
Key features of the IPB051N15NM6ATMA1 include ultra-low RDS(on) of 5.1 mOhm at VGS=10 V, a low gate charge of 51 nC that minimizes switching losses, and an Avalanche-rated body diode for ruggedness. The OptiMOS 6 cell platform improves figure-of-merit (FOM = RDS(on) x Qg) by roughly 30% versus the previous OptiMOS 5 generation, reducing both conduction and switching losses simultaneously. The D2PAK package offers a thermal pad that allows direct PCB heat spreading, supporting 234 W dissipation at TC=25C.
Typical applications include synchronous rectification in telecom and server SMPS, solar micro-inverters, DC-DC conversion in 48 V automotive and industrial systems, motor drive H-bridges, hot-swap and OR-ing controllers, and battery protection circuits. The 150 V drain-source rating provides ample headroom for 100 V bus systems including PoE, telecom rectifiers, and industrial 96 V battery stacks.
Designers should note that for full SOA verification at high currents the case temperature (TC) - not ambient (TA) - is the limiting factor. Always confirm Tj(max)=175C by computing thermal resistance from the PCB layout. Use a low-impedance gate driver (1 Ohm source/sink) to keep dv/dt-induced ringing manageable.
Drop-in alternatives for IPB051N15NM6ATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPB051N15NM6ATMA1 (same form factor and footprint) β differing in Drain-Source Voltage (VDS), Operating Temperature Range, Technology, FET Type, Continuous Drain Current (ID) at TC=25C.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPB50CN10NG
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ISC151N08NM6ATMA1
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View Datasheet βIPB110P06LMATMA1
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View Datasheet βSiR680DP-T1-GE3
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STH300N15WF2-2
β Drop-Inπ Reference alternative (not in catalog)
BSC050N04LSGATMA1
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View Datasheet βIPB051N15NM6ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 6 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at TA=25C | 18 A |
| Continuous Drain Current (ID) at TC=25C | 139 A |
| RDS(on) Typical at VGS=10 V | 5.1 mOhm |
| Gate Charge (Qg) Typical | 51 nC |
| Power Dissipation (PD) at TA=25C | 3.8 W |
| Power Dissipation (PD) at TC=25C | 234 W |
| Operating Temperature Range | -55C to +175C |
| Package / Case | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount |
| Pin Count | 3 (Drain, Source, Gate) |
| RoHS Status | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | Yes |
IPB051N15NM6ATMA1 Pin Configuration
| Pin 1 | Gate β MOSFET gate drive input |
| Pin 2 | Drain β MOSFET drain (connected to back tab for thermal dissipation) |
| Pin 3 | Source β MOSFET source (signal/power return) |
Safe Operating Area (SOA) - DC
Typical Applications
IPB051N15NM6ATMA1 is suitable for 7 applications: Telecom 48V Synchronous Rectification, Solar Micro-Inverter Power Stage, 48V Automotive eDrive Systems, Industrial Motor Drive H-Bridge, Hot-Swap & OR-ing Controller Switch, Battery Protection & Load Switch, PoE High-Power Injector.
Telecom 48V Synchronous Rectification
The IPB051N15NM6ATMA1 is well-suited for the synchronous-rectification stage of telecom 48V isolated DC-DC converters and 100V hold-up bus converters. Its 5.1 mOhm RDS(on) at VGS=10V minimizes conduction loss at 30-60A continuous current, while the 51 nC Qg allows >200 kHz switching with a standard 1A gate driver. The 150V VDS rating provides 50V margin above 100V bus transients per ETSI EN 300 132-2 telecom standards. Placed on the secondary side of a full-bridge LLC, it replaces two rectifying diodes and improves efficiency by 2-3 percentage points. The D2PAK package enables direct PCB heatsink attachment for sustained 100W+ operation without forced air cooling.
Recommended
Solar Micro-Inverter Power Stage
The IPB051N15NM6ATMA1 serves as the primary switching element in 600W-1500W solar micro-inverters operating from 40-100V PV string voltages. Its OptiMOS 6 cell delivers >98% peak efficiency in HERIC/HERIC-type inverter topologies, while the 150V VDS rating provides ample headroom for 100V open-circuit PV strings under cold-temperature Voc boost conditions. The 5.1 mOhm RDS(on) keeps conduction losses below 1.5% at full load, and the avalanche-rated body diode absorbs reverse-recovery transients from the complementary MOSFET in half-bridge configurations. The D2PAK PG-TO263-3-2 package allows bottom-side PCB cooling via aluminum substrate or thermal vias to inner copper planes.
Recommended
48V Automotive eDrive Systems
The IPB051N15NM6ATMA1 is suited for 48V mild-hybrid automotive subsystems including belt-starter-generators, eTurbo actuators, and 48V DC-DC converters interfacing the high-voltage traction bus. The 150V VDS rating covers the 48V bus with 3x transient margin per LV148 standards, and the 5.1 mOhm RDS(on) enables sustained 80A operation without thermal runaway at 105C ambient under-the-hood. The OptiMOS 6 platform's improved avalanche ruggedness supports repetitive switching events typical of automotive eDrive half-bridge cycles. Designers should pair it with an automotive-grade gate driver such as the 1ED020I12B2XUMA1 or 1ED3124MC12HXUMA1 to meet ASIL requirements.
Recommended
Industrial Motor Drive H-Bridge
The IPB051N15NM6ATMA1 functions as the high-side or low-side switch in industrial 96V-100V brushless DC (BLDC) motor drive H-bridges driving 5-15kW pumps, fans, and conveyor motors. Its 139A pulsed current capability supports peak motor inrush during start-up, while the 5.1 mOhm RDS(on) keeps I2R conduction loss below 50W at 100A peak phase current. The D2PAK package's 234W power dissipation rating at TC=25C allows mounting to a cold-plate or aluminum chassis for sustained 3-5kW motor drive operation. The avalanche-rated body diode eliminates the need for external freewheeling diodes in half-bridge configurations when paired with synchronous rectification control.
Recommended
Hot-Swap & OR-ing Controller Switch
The IPB051N15NM6ATMA1 acts as the series pass element in 48V-100V hot-swap and OR-ing controllers used in redundant server/telecom power distribution. Its 5.1 mOhm RDS(on) minimizes voltage drop and power dissipation across the OR-ing element when carrying 50A continuous load, while the 150V VDS rating handles inrush transients during board insertion into a live backplane. The avalanche rating absorbs the energy of inrush events when charging bulk output capacitors. Combined with a hot-swap controller IC, it provides programmable inrush current limiting and fast short-circuit isolation (<1us) for 48V server rails per UL 60950-1 safety standards.
Recommended
Battery Protection & Load Switch
The IPB051N15NM6ATMA1 serves as the main disconnect/load switch in 96V-144V lithium battery packs for e-bikes, light electric vehicles, and stationary energy storage. Its low 5.1 mOhm RDS(on) reduces I2R losses during 50-100A continuous discharge, while the 150V VDS rating accommodates multi-cell stack voltages including inductive transients from motor back-EMF. The avalanche-rated body diode can absorb reverse-battery hookup events when paired with a fuse for protection. The D2PAK package is suitable for direct PCB mounting within the battery management unit, providing a compact footprint with low thermal resistance for sustained high-current switching.
Recommended
PoE High-Power Injector
The IPB051N15NM6ATMA1 functions as the input protection and switching element in Power-over-Ethernet (PoE) high-power injectors delivering 60W-90W per port under IEEE 802.3bt Type 3/4 standards. Its 150V VDS rating easily covers the 57V PoE++ nominal supply with full transient margin, and the 5.1 mOhm RDS(on) minimizes voltage drop between the PSU and the RJ45 port. The avalanche rating absorbs inductive transients from cable disconnect events, while the low Qg supports high-frequency synchronous rectification for >95% efficiency in isolated DC-DC converters. The D2PAK PG-TO263-3-2 package enables compact PCB layouts for multi-port injector designs.
Recommended
Recommended Products Summary
Engineering reference data for IPB051N15NM6ATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB50CN10NG | ISC151N08NM6ATMA1 | SiR680DP-T1-GE3 | STH300N15WF2-2 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon (same brand) | Infineon (same brand) | Vishay Intertechnology | STMicroelectronics |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same |
| VDS (Drain-Source Voltage) | 150 V | 150 V - same | 80 V (-47%) | 150 V - same | 150 V - same |
| RDS(on) at VGS=10V (typ) | 5.1 mOhm | ~10 mOhm (+96%) | ~15 mOhm (+194%) | 6.5 mOhm (+27%) | 3.2 mOhm (-37%) |
| Continuous ID at TC=25C | 139 A | ~100 A | ~80 A | ~120 A | ~180 A |
| Gate Charge Qg (typ) | 51 nC | ~80 nC | ~40 nC | ~70 nC | ~90 nC |
| Power Dissipation at TC=25C | 234 W | ~150 W | ~120 W | ~200 W | ~280 W |
| Avalanche Rated | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Best-in-class 150V OptiMOS 6 figure-of-merit (vs IPB50CN10NG)
- Same D2PAK footprint as the lower-VDS BSC050N04LSGATMA1 (vs BSC050N04LSGATMA1)
- Lower RDS(on) than the cross-brand SiR680DP (vs SiR680DP-T1-GE3)
Design Notes
Estimated: At continuous ID=18 A (TA=25C) the device dissipates approximately P=I^2 x R = 18^2 x 0.0051 = 1.65 W, well within the 3.8 W TA rating. However at higher currents the case-mounted thermal path becomes critical. Use a D2PAK PCB footprint with at least 1 square inch of 2oz copper pour, plus thermal vias (24x 0.3mm) to inner ground planes, to achieve RthJA below 40C/W. Always verify Tj(max)=175C via Tj = PD x RthJA + TA; keep Tj below 150C for long-term reliability per the Infineon OptiMOS 6 datasheet derating guidelines.
Minimize the gate-drive loop inductance by routing the gate-driver output directly to pin 1 (Gate) with the gate-source resistor return placed adjacent to pin 3 (Source) - NOT the thermal tab drain. Keep the high-current drain/source power loop area below 1 cm^2 to limit parasitic inductance below 10 nH. Place a 10k Ohm gate-source pull-down resistor directly at the MOSFET gate pin to prevent false turn-on during dv/dt transients in half-bridge configurations. The D2PAK thermal pad should be soldered to a copper island matching the package footprint for proper thermal conduction.
For the PG-TO263-3-2 footprint, use the standard JEDEC TO-263 land pattern with 1.0mm minimum pad width and 0.5mm creepage between Drain (tab) and adjacent Source pads. Use a copper thickness of at least 2oz (70um) on the top layer to spread heat from the drain tab. Stencil aperture should be 1:1 to the land pad with no thermal pad relief - full coverage of the thermal tab is required for proper heat transfer. Reflow profile per JEDEC J-STD-020 MSL1 (peak temperature 245-260C for 20-40 sec) is acceptable.
Do not exceed VGS=+/-20V absolute maximum - the OptiMOS 6 gate oxide is optimized for 10V drive, and exceeding 20V (even transiently from ESD or driver fault) will permanently damage the device. Ensure the gate-driver IC has built-in VGS clamping or add external 18V Zener diodes gate-to-source. Avoid operating continuously in the linear region (VDS between 0 and saturation) - the SOA is only valid for pulsed operation at high VDS. Finally, verify the body diode reverse-recovery charge (Qrr) if using this part for synchronous rectification, as it affects dead-time losses.
Compliance Information
RoHS compliant per Infineon product page and DigiKey listing. Not AEC-Q100 qualified (industrial/commercial grade). Lead-free reflow compatible per JEDEC J-STD-020 MSL1.
