IPB051N15NM6ATMA1 vs ISC151N08NM6ATMA1 Comparison
Detailed side-by-side comparison of IPB051N15NM6ATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB051N15NM6ATMA1 - 150V 5.1mOhm OptiMOS 6 N-Channel MOSFET | Infineon
IPB051N15NM6ATMA1 β ActiveInfineon
ISC151N08NM6ATMA1
ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8
ISC151N08NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IPB051N15NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.02 | $0.78 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 6 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 150 V | 80 V |
| Continuous Drain Current (ID) at TA=25C | 18 A | β |
| Continuous Drain Current (ID) at TC=25C | 139 A | β |
| RDS(on) Typical at VGS=10 V | 5.1 mOhm | β |
| Gate Charge (Qg) Typical | 51 nC | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| Power Dissipation (PD) at TC=25C | 234 W | β |
| Operating Temperature Range | -55C to +175C | β |
| Package / Case | PG-TO263-3-2 (D2PAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Drain, Source, Gate) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Avalanche Rated | Yes | β |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (TA=25Β°C) | β | 9.2 A |
| Continuous Drain Current (TC=25Β°C) | β | 37 A |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 48 W |
| On-Resistance RDS(on) max | β | 15.1 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 3.5 V |
| Technology | β | OptiMOS 6 |
| Package | β | PG-TDSON-8 FL |
| Number of Pins | β | 8 |
| Channel Mode | β | Enhancement |
| Operating Temperature | β | -55 Β°C to +175 Β°C |