IPB100N12S305ATMA2 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IPB100N12S305ATMA2 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB100N12S305ATMA2 - 120V 100A N-Ch MOSFET | Infineon OptiMOS 5
IPB100N12S305ATMA2 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IPB100N12S305ATMA2 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.95 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 120V | OptiMOS 3 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 120 V | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Power Dissipation (PD) at Tc | 300 W | β |
| Drain-Source On-Resistance RDS(on) | 0.0048 ohm (4.8 mΞ©) at VGS=10 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 4 V (max, typical) |
| Maximum Junction Temperature | 175 Β°C | β |
| Avalanche Energy (EAS) | 1445 mJ | β |
| Package / Case | PG-TO263-3-2 (D2PAK) | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Technology | β | Trench MOSFET (OptiMOS 3) |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |