IPB100N12S305ATMA2 - 120V 100A N-Ch MOSFET | Infineon OptiMOS 5
MPN: IPB100N12S305ATMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $2.98 | $29.80 |
| 100 | $2.55 | $255.00 |
| 500 | $2.21 | $1,105.00 |
| 1,000 | $1.95 | $1,950.00 |
IPB100N12S305ATMA2 Overview
Background: An N-channel power MOSFET is a voltage-controlled majority-carrier device used as a high-efficiency switch in power-conversion stages. Within the semiconductor taxonomy it sits below IGBTs and SiC MOSFETs as the workhorse building block for synchronous rectification, motor drive, and DC-DC conversion. The Infineon OptiMOS 5 platform targets 40 V to 300 V applications where low RDS(on), low gate charge, and high avalanche ruggedness must coexist in a single footprint.
Key features include a typical RDS(on) around 4.8 mΩ at VGS = 10 V, a 120 V drain-source breakdown voltage, and a logic-level compatible gate threshold that allows direct drive from 12 V battery or 5 V MCU-derived gate drivers. The TO263-3-2 package offers a low thermal resistance path from die to PCB copper pad, enabling sustained 100 A operation with appropriate board layout.
Architecturally the cell uses Infineon's advanced trench technology to shrink the on-resistance per silicon area while keeping switching losses low. Compared with older planar generations, OptiMOS 5 reduces output charge (Qoss) and gate charge (Qg) - metrics that translate directly into lower switching losses at high PWM frequencies.
Typical applications include 12 V and 48 V automotive systems such as electric power steering, braking, and DC-DC converters, as well as industrial SMPS synchronous rectification stages, e-fuse and hot-swap circuits, and high-current motor drives. The 120 V rating comfortably covers 24 V and 48 V bus transients.
When designing with this part, ensure the gate driver can source and sink at least 1-2 A peak to charge and discharge the gate quickly. Place the source-return connection of the gate driver close to the source pin to avoid parasitic turn-on, and add a TVS or RC snubber if the application involves inductive switching above 60 V.
Drop-in alternatives for IPB100N12S305ATMA2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPB100N12S305ATMA2 (same form factor and footprint) — differing in Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Lead-Free / RoHS.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB100N12S3-05
✅ Drop-In📋 Reference alternative (not in catalog)
IPP075N15N3GXKSA1
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View Datasheet →BSC076N04NDATMA1
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View Datasheet →IPC100N04S5L1R5ATMA1
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View Datasheet →BSC050N04LSGATMA1
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View Datasheet →IRFB3207ZPBF
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View Datasheet →IRF1310NSTRLPBF
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View Datasheet →IPB100N12S305ATMA2 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 120V |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 120 V |
| Continuous Drain Current (ID) at Tc | 100 A |
| Power Dissipation (PD) at Tc | 300 W |
| Drain-Source On-Resistance RDS(on) | 0.0048 ohm (4.8 mΩ) at VGS=10 V |
| Gate-Source Voltage (VGS) max | ±20 V |
| Maximum Junction Temperature | 175 °C |
| Avalanche Energy (EAS) | 1445 mJ |
| Package / Case | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 °C to +175 °C (TJ) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
IPB100N12S305ATMA2 Pin Configuration
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Drain — Drain connection (also connected to metal tab) |
| Pin 3 | Source — Source connection |
Safe Operating Area (DC, TJ=175°C)
Typical Applications
IPB100N12S305ATMA2 is suitable for 7 applications: 48V Automotive DC-DC Converter, Electric Power Steering (EPS) Drive, Industrial Synchronous Rectification (SMPS), Hot-Swap / Inrush Current Limiter, High-Current BLDC Motor Drive, Battery Disconnect / Battery Management, Solar Inverter / Photovoltaic Switch.
48V Automotive DC-DC Converter
The IPB100N12S305ATMA2 fits 48 V mild-hybrid DC-DC converters that step down to 12 V for the vehicle's accessory loads. With 120 V VDS it tolerates 48 V bus transients well beyond steady-state, and 4.8 mΩ RDS(on) keeps full-load efficiency above 97% in a synchronous-rectification switch position. The 100 A ID rating supports 2-3 kW converter power levels when placed on a D2PAK pad with adequate copper. AEC-Q101 qualification allows direct use in vehicle power-electronic assemblies without re-qualification. Pair it with a UCC21750 or 1ED020I12B2XUMA1 gate driver from the XAIPART catalog for reinforced galvanic isolation.
Recommended
Electric Power Steering (EPS) Drive
In electric power steering racks the IPB100N12S305ATMA2 serves as the high-side and low-side switch in the bridge driving the steering motor. The 175 °C maximum junction temperature supports under-the-hood thermal load, and the 1445 mJ avalanche rating survives the inductive kick when the motor is commutated at high current. AEC-Q101 qualification and 100 A ID are sized for the ~80 A peak currents observed in column-assist EPS systems. Source-current PCB layout matters: keep the gate-drive return close to the source pin to avoid parasitic turn-on. The D2PAK footprint accepts a substantial copper pour for sustained current.
Recommended
Industrial Synchronous Rectification (SMPS)
As the synchronous-rectifier low-side MOSFET in a 24 V or 48 V industrial SMPS, the IPB100N12S305ATMA2 replaces Schottky diodes to lift efficiency above 96%. Its 4.8 mΩ RDS(on) at 25 °C minimizes conduction loss, and the 120 V rating covers 48 V bus transients with safety margin. The D2PAK package's exposed tab carries heat directly to the PCB copper, allowing natural-convection cooling at moderate loads. Designers should add a dead-time generator between high-side and low-side commands to prevent shoot-through, and verify dv/dt immunity with the gate-driver's common-mode transient immunity specification.
Recommended
Hot-Swap / Inrush Current Limiter
In 24 V and 48 V hot-swap and e-fuse circuits the IPB100N12S305ATMA2 acts as the linear pass element that limits inrush when bulk capacitors charge. The 300 W power dissipation allows short-duration linear-mode operation (10-100 ms) during turn-on, after which it can be fully enhanced for minimal loss. The 175 °C TJ max gives thermal headroom during the inrush event. Build a SOA check: at turn-on the device operates in its linear region, so verify the VDS × ID locus stays within the SOA curves in the datasheet. Pair it with a hot-swap controller like ADM1177 or LTC4218 for current-limit and timer functions.
Recommended
High-Current BLDC Motor Drive
In a 3-phase brushless DC motor drive for industrial pumps or fans, the IPB100N12S305ATMA2 forms one of the six switches in the bridge. The 100 A ID rating and 4.8 mΩ RDS(on) deliver >98% efficiency at 50 A continuous phase current, and the 120 V VDS accommodates 48 V rectified DC bus plus regen transients. The D2PAK package is electrically isolated only by the PCB tab pad, so a thermally conductive insulator may be required if mounted to a grounded chassis. Dead-time insertion is critical - use a gate driver like IR2109SPBF or 2EDR8258XXUMA1 with programmable dead-time.
Recommended
Battery Disconnect / Battery Management
In 12 V / 24 V / 48 V battery management systems the IPB100N12S305ATMA2 implements the main disconnect switch that isolates the battery during fault conditions. The 100 A ID rating supports battery pack peak currents, and 120 V VDS covers 48 V systems with margin. Low RDS(on) keeps the voltage drop below 50 mV at full load, minimizing self-discharge when the system is parked. The part supports PWM-based current limiting during soft-start by operating in the linear region briefly. Use an isolated gate driver such as 1EDN7136UXTSA1 if the BMS MCU ground is referenced to the negative rail rather than the source pin.
Recommended
Solar Inverter / Photovoltaic Switch
In small string inverters and PV charge controllers the IPB100N12S305ATMA2 functions as the high-side or low-side switch in the boost or buck stage between the PV panel and the DC bus. With 120 V VDS it tolerates open-circuit PV voltage transients on 48V-96V string configurations. The 4.8 mΩ RDS(on) maximizes conversion efficiency in the 95%+ range, critical for solar energy harvest. The AEC-Q101 automotive-grade pedigree provides additional reliability margin for outdoor installations exposed to thermal cycling. Mount the D2PAK with substantial copper area - typically 50-100 cm² of 2 oz copper - to keep the junction temperature in check.
Recommended
Recommended Products Summary
Engineering reference data for IPB100N12S305ATMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB100N12S3-05 | IPP075N15N3GXKSA1 | BSC076N04NDATMA1 | IPC100N04S5L1R5ATMA1 | IRFB3207ZPBF |
|---|---|---|---|---|---|---|
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage VDS | 120 V | 120 V | 150 V | 40 V | 40 V | 75 V |
| RDS(on) at VGS=10V | 4.8 mΩ | 4.8 mΩ | 7.5 mΩ | 7.6 mΩ | 1.5 mΩ | 4.0 mΩ |
| Maximum Junction Temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | Non-automotive |
| Technology Platform | OptiMOS 5 | OptiMOS 5 | OptiMOS 3 | OptiMOS 5 | OptiMOS 5 | HEXFET |
Key Differentiators
- Highest VDS in this footprint segment (vs BSC076N04NDATMA1)
- Lower RDS(on) than competing 75V D2PAK parts (vs IRFB3207ZPBF)
- Automotive-grade qualification (vs IRF1310NSTRLPBF)
- OptiMOS 5 technology platform (vs IPP075N15N3GXKSA1)
Design Notes
Estimated: At 100 A continuous drain current and 4.8 mΩ RDS(on) at TJ=25 °C, conduction loss is P = I² × RDS(on) = 100² × 0.0048 = 48 W. With a D2PAK junction-to-ambient thermal resistance of approximately 40 °C/W on a 1-oz 100 cm² copper pad, the junction temperature would rise 48 W × 40 °C/W = 1920 °C above ambient - clearly beyond 175 °C TJ max. For continuous 100 A operation, active cooling or forced-air convection is required, or the load must be pulsed below the thermal limit. For typical 30-50 A continuous operation, a well-laid-out D2PAK pad will keep Tj within safe bounds.
Source-return path inductance is critical for hard-switched applications. The gate-driver's source connection must return to the MOSFET source pin via a Kelvin connection - route the gate-drive ground directly to the source pin (pin 3) and not to the power-source PCB trace, to avoid parasitic turn-on during fast switching events. Keep the gate-drive loop area under 1 cm² to minimize gate ringing. Place the gate-driver within 2-3 cm of the MOSFET gate pin to avoid trace inductance.
Do not exceed VGS = ±20 V absolute maximum, even though the typical gate-drive voltage is 10 V. Over-voltage on the gate oxide will permanently damage the device. Add a gate-source Zener clamp (e.g., 15 V TVS) if the gate-driver could overshoot during transient events. Also avoid operating above 175 °C TJ - the part is rated to 175 °C but reliability derates rapidly beyond 150 °C; design conservatively with TJ(max) ≤ 125 °C for long-life products.
The fast switching edges of this MOSFET can generate significant EMI. Estimated: With a typical turn-off time of 20 ns and a switching current of 50 A, the di/dt during turn-off reaches 2500 A/μs - this couples through parasitic inductance into voltage spikes and radiated emissions. Use a snubber (RC or RCD) across the MOSFET to slow the switching edge to 50-100 ns if EMI is a problem. A gate resistor of 10-47 Ω in series with the gate pin slows both turn-on and turn-off without significantly increasing switching loss.
In a synchronous-rectifier position the body diode conducts during dead-time, generating reverse-recovery losses. This part is optimized for synchronous rectification, but if reverse-recovery losses are significant, consider adding an external SiC Schottky diode in parallel with the body diode. For hard-switched bridge topologies, the OptiMOS 5 platform's low Qrr keeps reverse-recovery loss below 5% of turn-on loss.
Compliance Information
AEC-Q101 (automotive) qualified per Infineon OptiMOS 5 datasheet family. RoHS compliant. Lead-free (Pb-free) reflow soldering compatible per JEDEC J-STD-020.
