IPB110P06LMATMA1 vs IPB051N15NM6ATMA1 Comparison
Detailed side-by-side comparison of IPB110P06LMATMA1 by Infineon and IPB051N15NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB051N15NM6ATMA1 - 150V 5.1mOhm OptiMOS 6 N-Channel MOSFET | Infineon
IPB051N15NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IPB110P06LMATMA1 | IPB051N15NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.31 | $2.02 |
| FET Type | P-Channel | N-Channel |
| Technology | OptiMOS (trench MOSFET) | β |
| Drain-Source Voltage (VDS) | -60 V | 150 V |
| Continuous Drain Current (ID) at TC=25C | -100 A | 139 A |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | β |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | β |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | β |
| Gate-Source Voltage (VGS max) | +/-20 V | β |
| Operating Temperature Range | -55 C to +175 C (TJ) | -55C to +175C |
| Package / Case | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | β |
| Gate Drive Level | Logic-level compatible | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 6 |
| Continuous Drain Current (ID) at TA=25C | β | 18 A |
| RDS(on) Typical at VGS=10 V | β | 5.1 mOhm |
| Gate Charge (Qg) Typical | β | 51 nC |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation (PD) at TA=25C | β | 3.8 W |
| Power Dissipation (PD) at TC=25C | β | 234 W |
| Pin Count | β | 3 (Drain, Source, Gate) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | β | Yes |