IPB120N10S405ATMA1 vs IPB027N10N3GATMA1 Comparison

Detailed side-by-side comparison of IPB120N10S405ATMA1 by Infineon and IPB027N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB120N10S405ATMA1 IPB120N10S405ATMA1 - 100V 120A 5mΞ© N-Ch MOSFET | Infineon

IPB120N10S405ATMA1 - 100V 120A 5mΞ© N-Ch MOSFET | Infineon

IPB120N10S405ATMA1 βœ“ Active
Infineon
IPB027N10N3GATMA1 IPB027N10N3GATMA1 - 100V OptiMOS 3 N-FET, 2.7mΞ© | Infineon

IPB027N10N3GATMA1 - 100V OptiMOS 3 N-FET, 2.7mΞ© | Infineon

IPB027N10N3GATMA1 βœ“ Active

Specification Comparison

Parameter IPB120N10S405ATMA1 IPB027N10N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.10 $1.62
Transistor Type N-Channel MOSFET β€”
Technology Enhancement Mode (Trench) OptiMOS 3 (Trench MOSFET)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc 120 A β€”
Power Dissipation (PD) at Tc 190 W β€”
On-Resistance R_DS(on) (typ) 5 mΞ© at VGS=10 V β€”
Package PG-TO263-3 (D2PAK) Surface Mount PG-TO263-3 (D2PAK)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +175 C -55Β°C to +175Β°C (TJ)
MSL (Moisture Sensitivity Level) MSL1 (unlimited floor life at ≀30 C / 85% RH) β€”
Peak Reflow Temperature 260 C β€”
Avalanche Tested 100% (production-screened) β€”
Automotive Qualification AEC-Q101 Qualified β€”
RoHS Compliance Green Product (RoHS compliant) β€”
Gate Threshold Voltage (typ) [DATA_NEEDED: VGS(th)] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg] [DATA_NEEDED: typical Qg at VGS=10V]
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] β€”
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr - body diode] β€”
FET Type β€” N-Channel
Continuous Drain Current (ID) at TC=25Β°C β€” 120 A
Power Dissipation (PD) at TC=25Β°C β€” 300 W
On-Resistance RDS(on) max at VGS=10V β€” 3.4 mΞ©
On-Resistance RDS(on) typical at VGS=10V β€” 2.7 mΞ©
Gate-Source Voltage (VGS) max β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: typical and min/max VGS(th) values]
Thermal Resistance Junction-to-Case (RΞΈJC) β€” [DATA_NEEDED: exact Β°C/W value]
Single Pulse Avalanche Energy (EAS) β€” [DATA_NEEDED: datasheet EAS figure]
RoHS Status β€” Compliant
MSL Level β€” [DATA_NEEDED: moisture sensitivity level]

Datasheets & Resources

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