IPB120N10S405ATMA1 - 100V 120A 5mΩ N-Ch MOSFET | Infineon
MPN: IPB120N10S405ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.85 | $38.50 |
| 100 | $3.32 | $332.00 |
| 500 | $2.78 | $1,390.00 |
| 1,000 | $2.45 | $2,450.00 |
| 3,000 | $2.1 | $6,300.00 |
IPB120N10S405ATMA1 Overview
An N-channel power MOSFET is a voltage-controlled semiconductor switch in which a positive gate-source voltage creates an n-type conduction channel between the drain and source terminals. Power MOSFETs sit in the discrete semiconductor hierarchy (MOSFET -> transistor -> discrete semiconductor -> power semiconductor), where they are the workhorse of switching power conversion, motor drive, and load switching applications due to their fast switching, easy gate drive, and zero static gate current.
Key differentiating specifications include a maximum drain-source voltage VDS of 100 V, continuous drain current ID of 120 A at case temperature, pulsed avalanche current rated, and a typical R_DS(on) of 5 mΩ at VGS=10 V. The PG-TO263-3 package provides a tab-mount thermal path with low junction-to-case thermal resistance, enabling compact high-current designs. The device is 100% avalanche-tested and rated MSL1 up to 260 °C peak reflow, suitable for lead-free reflow profiles.
The MOSFET uses Infineon's advanced trench-cell process technology, which minimizes on-state losses while maintaining robust SOA and avalanche capability. The 100% avalanche rating indicates each device passes a single-pulse avalanche energy test during production screening, a strong indicator of ruggedness in unclamped inductive switching events such as solenoid or motor drive.
Typical applications include automotive 12 V/48 V high-current switching (e.g., EPS, electric power steering, ABS modules), DC-DC converter primary-side switches, motor drive H-bridges, solenoid drivers, and battery protection disconnect switches. The AEC-Q101 qualification makes it a strong fit for automotive ECU power stages.
When designing with this part, observe the safe operating area carefully at high VDS and high ID: a momentary short-circuit on a 48 V bus can dissipate hundreds of watts. Use a low-inductance gate-drive loop with a 10 Ω gate resistor to control ringing and dv/dt, and ensure the PCB copper pour under the D2PAK tab is sized to keep steady-state junction temperature below 150 °C.
This page synthesizes distributor pricing across 9 channels, AEC-Q101-qualified drop-in alternatives in the same PG-TO263-3 footprint, and practical thermal/SOA design guidance not present in the bare datasheet.
Drop-in alternatives for IPB120N10S405ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPB120N10S405ATMA1 (same form factor and footprint) — differing in Package, Avalanche Tested, Operating Temperature Range, Technology, Mounting Type.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB120N10S403ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPB120N10S405ATMA1 Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Technology | Enhancement Mode (Trench) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tc | 120 A |
| Power Dissipation (PD) at Tc | 190 W |
| On-Resistance R_DS(on) (typ) | 5 mΩ at VGS=10 V |
| Package | PG-TO263-3 (D2PAK) Surface Mount |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 C to +175 C |
| MSL (Moisture Sensitivity Level) | MSL1 (unlimited floor life at ≤30 C / 85% RH) |
| Peak Reflow Temperature | 260 C |
| Avalanche Tested | 100% (production-screened) |
| Automotive Qualification | AEC-Q101 Qualified |
| RoHS Compliance | Green Product (RoHS compliant) |
IPB120N10S405ATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input; voltage-controlled channel control |
| Pin 2 | Drain (Tab) — Drain terminal; electrically tied to metal tab for thermal dissipation |
| Pin 3 | Source — Source terminal; reference for gate drive |
Safe Operating Area (DC, Tj=175C)
Typical Applications
IPB120N10S405ATMA1 is suitable for 6 applications: Automotive 12V/48V Load Switch, DC-DC Converter Primary Switch, Motor Drive H-Bridge, Battery Protection Disconnect, Solenoid and Valve Driver, Industrial Power Tool Drive.
Automotive 12V/48V Load Switch
The IPB120N10S405ATMA1 is ideal as a high-side or low-side load switch in 12 V and 48 V mild-hybrid automotive systems because its 100 V VDS rating provides substantial headroom above 48 V bus transients, while its 5 mΩ R_DS(on) keeps conduction loss under 2 W at 20 A. AEC-Q101 qualification and 100% avalanche screening suit it for ECU power distribution, body control modules, and battery disconnect relays. Per Infineon's automotive MOSFET selection guide, this part is commonly used in EPS and ABS modules where reliability margins are tight.
Recommended
DC-DC Converter Primary Switch
In 48 V to 12 V buck converters and isolated half-bridge topologies, the IPB120N10S405ATMA1 serves as a primary-side MOSFET because its 100 V VDS rating handles 48 V nominal plus ringing, and its low Qg enables switching frequencies above 100 kHz. The 5 mΩ R_DS(on) keeps conduction loss modest even at high duty cycles, while the PG-TO263-3 tab provides low thermal resistance for sustained 190 W dissipation. Use a 10 Ω gate resistor to control ringing and minimize EMI in the half-bridge node.
Recommended
Motor Drive H-Bridge
The IPB120N10S405ATMA1 fits motor-drive H-bridge and three-phase inverter legs in 24 V / 48 V BLDC and brushed-DC motor applications where 100 V VDS provides ample margin for inductive kick, and 120 A continuous current handles peak motor stall transients. The 100% avalanche rating ensures robust commutation under hard switching. The PG-TO263-3 tab delivers the thermal performance needed for sustained current during motor start-up, with the metal tab providing both electrical drain connection and PCB heat-spreading path.
Recommended
Battery Protection Disconnect
In lithium-ion battery packs and e-fuse designs, the IPB120N10S405ATMA1 acts as the master disconnect switch because its 5 mΩ on-resistance minimizes voltage drop and self-heating during 100 A discharge pulses, and its 100% avalanche rating protects against reverse-battery and hot-plug transients. The 120 A continuous rating supports high-C-rate battery packs. AEC-Q101 qualification is essential for automotive traction batteries, while the MSL1 rating simplifies assembly of large-format battery modules.
Recommended
Solenoid and Valve Driver
The IPB120N10S405ATMA1 excels in solenoid and valve driver applications such as automatic transmission solenoids, EV charging contactors, and industrial hydraulic valves because unclamped inductive kickback demands robust avalanche energy handling - and this part is 100% production-screened for that exact test. The 100 V VDS accommodates flyback voltages of even high-inductance 48 V solenoids with margin to spare, and the D2PAK tab provides the thermal headroom for repetitive pulse operation during PWM current regulation.
Recommended
Industrial Power Tool Drive
In high-power cordless drills, saws, and outdoor power equipment running on 18 V / 36 V battery packs, the IPB120N10S405ATMA1 is well-matched as the main power switch and reverse-battery protection FET because its 100 V VDS handles the inductive kick from motor windings without external TVS clamping, and its 5 mΩ on-resistance minimizes voltage drop at 30-60 A peak motor current. AEC-Q101 qualification (above industrial standards) and 100% avalanche test give end-of-line reliability that translates directly to lower warranty cost for power tool OEMs.
Recommended
Recommended Products Summary
Engineering reference data for IPB120N10S405ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB120N10S403ATMA1 |
|---|---|---|
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same |
| Brand | Infineon Technologies | Infineon Technologies - same |
| VDS (Drain-Source Voltage) | 100 V | 100 V |
| Continuous Drain Current (Tc) | 120 A | 120 A |
| R_DS(on) (typ at VGS=10V) | 5 mΩ | 3 mΩ |
| Power Dissipation (Tc) | 190 W | 190 W |
| AEC-Q101 Qualified | Yes | Yes |
| Avalanche Tested | 100% | 100% |
| MSL Level | MSL1 | MSL1 |
| Operating Temperature Range | -55 C to +175 C | -55 C to +175 C |
Key Differentiators
- Higher R_DS(on) for cost-sensitive designs (vs IPB120N10S403ATMA1)
- AEC-Q101 qualified with 100% avalanche screening (vs Non-automotive-grade MOSFETs in same package)
- MSL1 unlimited floor life simplifies assembly (vs Moisture-sensitive competing MOSFETs)
Design Notes
Estimated: at continuous 120 A and 5 mΩ R_DS(on), conduction loss is P = I² × R_DS(on) = 120² × 0.005 = 72 W. The PG-TO263-3 package is rated for 190 W at Tc=25 °C, so the limiting factor is steady-state thermal resistance from junction to ambient. Ensure at least 6 square inches of 2 oz copper pour under the tab to keep junction-to-ambient thermal resistance below 30 °C/W, otherwise the part will thermal-limit well before reaching the datasheet current rating.
Place a 10 Ω gate-drive resistor close to the gate pin to damp ringing caused by the gate-source capacitance and the gate-drive loop inductance. Add a 100 kΩ gate-source pull-down resistor to keep the MOSFET off during controller power-up. Minimize the source-inductance loop by using a Kelvin source connection if available, or by returning gate-drive ground directly to the source pin rather than to the power ground plane.
Do not operate VGS above the absolute maximum of ±20 V - even brief transients from a gate-driver bootstrap can exceed this and permanently damage the gate oxide. Do not exceed 100 V VDS even transiently; add a TVS diode or snubber across drain-source for inductive loads. The datasheet pulsed drain current (typically 480 A) is for pulses <100 µs only - exceeding this duration moves operation outside the SOA and risks thermal runaway.
Compliance Information
AEC-Q101 (automotive discrete semiconductor standard, equivalent to AEC-Q100 for discretes) qualified per Infineon datasheet. Green Product / RoHS compliant per product page. 100% avalanche-tested. MSL1 rating per JEDEC J-STD-020.
