IPB120N10S405ATMA1 vs IPB90N06S4L04ATMA2 Comparison

Detailed side-by-side comparison of IPB120N10S405ATMA1 by Infineon and IPB90N06S4L04ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB120N10S405ATMA1 IPB120N10S405ATMA1 - 100V 120A 5mΞ© N-Ch MOSFET | Infineon

IPB120N10S405ATMA1 - 100V 120A 5mΞ© N-Ch MOSFET | Infineon

IPB120N10S405ATMA1 βœ“ Active
Infineon
IPB90N06S4L04ATMA2 IPB90N06S4L04ATMA2 - 60V 90A N-Ch MOSFET D2PAK | Infineon

IPB90N06S4L04ATMA2 - 60V 90A N-Ch MOSFET D2PAK | Infineon

IPB90N06S4L04ATMA2 βœ“ Active

Specification Comparison

Parameter IPB120N10S405ATMA1 IPB90N06S4L04ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.10 $0.94
Transistor Type N-Channel MOSFET β€”
Technology Enhancement Mode (Trench) OptiMOS T2, N-channel enhancement mode
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at Tc 120 A β€”
Power Dissipation (PD) at Tc 190 W β€”
On-Resistance R_DS(on) (typ) 5 mΞ© at VGS=10 V β€”
Package PG-TO263-3 (D2PAK) Surface Mount PG-TO263-3-2 (D2PAK)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +175 C -55 Β°C to +175 Β°C
MSL (Moisture Sensitivity Level) MSL1 (unlimited floor life at ≀30 C / 85% RH) β€”
Peak Reflow Temperature 260 C 260 Β°C
Avalanche Tested 100% (production-screened) 100% avalanche-tested
Automotive Qualification AEC-Q101 Qualified β€”
RoHS Compliance Green Product (RoHS compliant) β€”
Gate Threshold Voltage (typ) [DATA_NEEDED: VGS(th)] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg] β€”
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] β€”
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr - body diode] β€”
Manufacturer β€” Infineon Technologies
Part Number β€” IPB90N06S4L04ATMA2
Drain-Source Voltage (V_DSS) β€” 60 V
Continuous Drain Current (I_D, Tc) β€” 90 A
Pulsed Drain Current (I_D,pulse) β€” 360 A
Power Dissipation (P_D, Tc) β€” 150 W
On-State Resistance R_DS(on) (typ @ VGS=10V) β€” 3.4 mΞ©
Gate Threshold Voltage (V_GS(th)) β€” [DATA_NEEDED: V_GS(th)]
Gate-Source Voltage (V_GS) β€” Β±20 V
MSL Level β€” MSL1 (unlimited floor life)
AEC-Q101 Qualification β€” Qualified (automotive grade)
RoHS / Halogen-Free β€” Yes (Green Product)

Datasheets & Resources

Browse All Products Create BOM Request Quote