IPB120N10S405ATMA1 vs IPP120N08S403AKSA1 Comparison

Detailed side-by-side comparison of IPB120N10S405ATMA1 by Infineon and IPP120N08S403AKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB120N10S405ATMA1 IPB120N10S405ATMA1 - 100V 120A 5mΞ© N-Ch MOSFET | Infineon

IPB120N10S405ATMA1 - 100V 120A 5mΞ© N-Ch MOSFET | Infineon

IPB120N10S405ATMA1 βœ“ Active
Infineon
IPP120N08S403AKSA1 IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 βœ“ Active

Specification Comparison

Parameter IPB120N10S405ATMA1 IPP120N08S403AKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.10 $1.28
Transistor Type N-Channel MOSFET N-Channel Enhancement Mode
Technology Enhancement Mode (Trench) β€”
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at Tc 120 A β€”
Power Dissipation (PD) at Tc 190 W β€”
On-Resistance R_DS(on) (typ) 5 mΞ© at VGS=10 V β€”
Package PG-TO263-3 (D2PAK) Surface Mount TO-220-3-1 (PG-TO220-3-1)
Mounting Type Surface Mount Through Hole
Operating Temperature Range -55 C to +175 C β€”
MSL (Moisture Sensitivity Level) MSL1 (unlimited floor life at ≀30 C / 85% RH) β€”
Peak Reflow Temperature 260 C β€”
Avalanche Tested 100% (production-screened) 100% Avalanche Tested
Automotive Qualification AEC-Q101 Qualified AEC-Q101
RoHS Compliance Green Product (RoHS compliant) β€”
Gate Threshold Voltage (typ) [DATA_NEEDED: VGS(th)] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg] 167 nC at VGS=10 V
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] 11550 pF at VDS=25 V
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr - body diode] β€”
Manufacturer β€” Infineon Technologies
Part Family β€” OptiMOS Power MOSFET
Drain-to-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (ID, Tc) β€” 120 A
Power Dissipation (PD, Tc) β€” 278 W
On-State Resistance (RDS(on)) β€” 2.8 mOhm at VGS=10 V, ID=100 A
Gate-Source Voltage (VGS) β€” +/-20 V
Operating Junction Temperature β€” -55 C to +175 C
Pin Count β€” 3
MSL Level β€” MSL1 (peak reflow 260 C)
RoHS Status β€” Compliant (Green Product)

Datasheets & Resources

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