IPB180P04P4L02ATMA2 vs IPD30N08S2L21ATMA1 Comparison
Detailed side-by-side comparison of IPB180P04P4L02ATMA2 by Infineon and IPD30N08S2L21ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB180P04P4L02ATMA2 - 40V P-Channel 180A OptiMOS-P2 MOSFET | Infineon
IPB180P04P4L02ATMA2 β ActiveInfineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 β ActiveSpecification Comparison
| Parameter | IPB180P04P4L02ATMA2 | IPD30N08S2L21ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.85 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-P2 | OptiMOS |
| Transistor Type | P-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 75 V |
| Continuous Drain Current (ID) at Tc | 180 A | β |
| Power Dissipation (PD) at Tc | 150 W | β |
| On-State Resistance RDS(on) max | 2.4 mOhm at VGS = -10 V (per Infineon product page) | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Operating Temperature Range | -55 C to +175 C (junction) | -55C to +175C |
| Package | PG-TO263-7-3 (D2PAK-6, 7-pin) | PG-TO252-3-11 (DPAK-2) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 7 (6 + tab) | 3 (Drain tab + Gate + Source) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| RoHS Status | Compliant (per Infineon product page) | Compliant |
| Tab Connection | Drain | β |
| Continuous Drain Current (ID) at Tc=25C | β | 30 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) at VGS=10 V | β | 26 milliohm (typ) |
| Gate Threshold Voltage (VGS(th)) | β | Logic-level (L series) |
| Gate Charge (Qg) typ | β | 56 nC |
| Power Dissipation (PD) at Tc=25C | β | 136 W |
| Maximum Junction Temperature | β | +175C |