IPB200N25N3GATMA1 vs IPB107N20N3GATMA1 Comparison

Detailed side-by-side comparison of IPB200N25N3GATMA1 by Infineon and IPB107N20N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB200N25N3GATMA1 IPB200N25N3GATMA1 - 250V 64A OptiMOS 3 N-Ch MOSFET | Infineon

IPB200N25N3GATMA1 - 250V 64A OptiMOS 3 N-Ch MOSFET | Infineon

IPB200N25N3GATMA1 βœ“ Active

Specification Comparison

Parameter IPB200N25N3GATMA1 IPB107N20N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.65 $1.18
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 3 β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Package PG-TO263-3 (D2PAK) PG-TO263-3 (D2PAK)
Mounting Type Surface Mount Surface Mount
Drain-Source Voltage (V_DS) 250 V β€”
Continuous Drain Current (I_D) at T_C 64 A β€”
Power Dissipation (P_D) at T_C 300 W β€”
R_DS(on) max at V_GS=10V 20 mOhm β€”
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical/max] β€”
Technology OptiMOS 3 (Trench) OptiMOS 3 trench MOSFET
Gate Charge (Q_g) [DATA_NEEDED: Q_g typical] β€”
Operating Temperature Range -55C to +175C [DATA_NEEDED: Tj max and operating range]
RoHS Status Compliant Compliant
Halogen-Free Yes (per Infineon OptiMOS family datasheet) β€”
MSL Level 1 (per JEDEC J-STD-020) β€”
Pin Count 3 (2+tab) 3 (Drain, Source, Gate) + Tab
Product Family β€” OptiMOS 3
Drain-Source Voltage (VDS) β€” 200 V
Continuous Drain Current (ID) at Tc β€” 88 A
Maximum Power Dissipation (Pd) at Tc β€” 300 W
On-Resistance RDS(on) at VGS=10V β€” 9.6 milliohm (typical, per third-party listing)
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/range]

Datasheets & Resources

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