IPB200N25N3GATMA1 - 250V 64A OptiMOS 3 N-Ch MOSFET | Infineon
MPN: IPB200N25N3GATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.42 | $34.20 |
| 100 | $2.78 | $278.00 |
| 500 | $2.35 | $1,175.00 |
| 1,000 | $1.98 | $1,980.00 |
| 3,000 | $1.65 | $4,950.00 |
IPB200N25N3GATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or modulate current between the drain and source terminals. N-channel MOSFETs such as the IPB200N25N3GATMA1 are the dominant building blocks of modern switched-mode power conversion, falling within the broader hierarchy of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs. OptiMOS 3 represents Infineon's third-generation trench MOSFET platform optimized for low figure-of-merit (R_DS(on) x Q_g), reducing both conduction and switching losses.
Key features include a maximum R_DS(on) of 20 mOhm at V_GS = 10 V, an ultra-low gate charge Q_g, and a logic-level-friendly gate threshold that simplifies gate-drive design. The D2PAK (PG-TO263-3) surface-mount package delivers a low thermal resistance from junction to case, allowing the 300 W dissipation rating to be fully realized on FR-4 PCB with adequate copper area. The part is halogen-free and RoHS-compliant, fitting modern environmental regulations.
The OptiMOS 3 process uses a deep-trench cell structure that simultaneously minimizes on-resistance and gate charge. This figure-of-merit balance is critical in high-frequency synchronous rectification, where every switching cycle accumulates losses proportional to Q_g. The 250 V rating also provides comfortable margin above 48 V telecom and 60 V industrial bus rails, supporting 80 V transient tolerance commonly required in those systems.
Typical applications include synchronous rectification in 48 V telecom DC-DC converters, primary-side switches in uninterruptible power supplies (UPS), DC motor drive inverters, and high-current point-of-load converters. The 250 V drain rating also makes it suitable for 120 V AC rectified rails, solar micro-inverters, and industrial SMPS where a single high-current switch replaces older-generation planar MOSFETs.
When designing with this part, prioritize PCB layout for low source-inductance and adequate copper area under the D2PAK tab for thermal dissipation. Use a gate driver capable of sourcing/sinking at least 1 A peak to fully exploit the fast switching edge, and ensure the gate-source voltage remains within +/-20 V to prevent oxide failure.
This page synthesizes distributor pricing, drop-in alternatives in the same D2PAK footprint, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IPB200N25N3GATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPB200N25N3GATMA1 (same form factor and footprint) β differing in Package, Drain-Source Voltage (VDS), Technology, Halogen-Free, Operating Temperature Range.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPB200N25N3G
β Drop-Inπ Reference alternative (not in catalog)
IPB107N20N3GATMA1
β Drop-Inβ In Stock
$1.18 / Unit
View Datasheet βIPB072N15N3GATMA1
β Drop-Inβ In Stock
$2.84 / Unit
View Datasheet βIPB120P04P4L03ATMA2
β Drop-Inβ In Stock
$1.74 / Unit
View Datasheet βBSC0902NSATMA1
β Drop-Inβ In Stock
$0.78 / Unit
View Datasheet βIPB200N25N3GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 3 |
| Transistor Type | N-Channel MOSFET |
| Package | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount |
| Drain-Source Voltage (V_DS) | 250 V |
| Continuous Drain Current (I_D) at T_C | 64 A |
| Power Dissipation (P_D) at T_C | 300 W |
| R_DS(on) max at V_GS=10V | 20 mOhm |
| Technology | OptiMOS 3 (Trench) |
| Operating Temperature Range | -55C to +175C |
| RoHS Status | Compliant |
| Halogen-Free | Yes (per Infineon OptiMOS family datasheet) |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Pin Count | 3 (2+tab) |
IPB200N25N3GATMA1 Pin Configuration
| Pin 1 | Gate (G) β MOSFET gate input; driven by gate driver circuit, do not exceed +/-20V V_GS |
| Pin 2 | Drain (D) β Drain terminal, internally connected to the metal tab on the back of the package |
| Pin 3 | Source (S) β Source terminal; typically connected to ground for low-side switching applications |
| Pin TAB | Drain (TAB) β Metal back-tab acting as drain; must be soldered to PCB copper pour for thermal dissipation |
Safe Operating Area (DC)
Typical Applications
IPB200N25N3GATMA1 is suitable for 6 applications: 48V Telecom Synchronous Rectification, Uninterruptible Power Supplies (UPS), DC Motor Drive Inverters, Solar Micro-Inverters, Industrial SMPS Primary-Side Switch, High-Current Point-of-Load Converters.
48V Telecom Synchronous Rectification
The IPB200N25N3GATMA1 is purpose-built for 48V telecom bus synchronous rectification in isolated DC-DC converters. Its 250V V_DS rating provides 5x safety margin above 48V nominal rails, while the 20mOhm R_DS(on) at 64A minimizes conduction loss in high-current secondary-side rectifiers. Placed as the low-side sync FET in a half-bridge LLC or hard-switched forward converter, it replaces Schottky diode pairs and recovers 2-4% efficiency at full load. The OptiMOS 3 trench process also reduces Q_g relative to planar MOSFETs, enabling higher switching frequencies and smaller magnetic components in next-generation telecom bricks.
Recommended
Uninterruptible Power Supplies (UPS)
In on-line UPS topologies the IPB200N25N3GATMA1 serves as the primary-side switch in the PFC boost stage and as the battery-side disconnect switch. Its 250V V_DS handles rectified 120V AC mains with substantial transient margin, while the 64A continuous rating supports 3-5kVA residential UPS designs. Per Infineon's UPS reference designs, paralleling two IPB200N25N3GATMA1 devices extends capacity to 10kVA with predictable current sharing due to the part's positive temperature coefficient of R_DS(on). The 300W power dissipation rating in D2PAK permits continuous battery-charging operation without active cooling.
Recommended
DC Motor Drive Inverters
The IPB200N25N3GATMA1 is well matched to industrial DC motor drives and small three-phase inverter legs operating from rectified 48-120V DC buses. Its 250V breakdown comfortably tolerates back-EMF spikes from inductive motor windings during hard commutation, while 64A continuous current supports motors up to approximately 3HP. According to Infineon's OptiMOS 3 datasheet, the low R_DS(on) x Q_g figure of merit reduces both conduction and switching losses, enabling higher PWM frequencies without derating the thermal budget. The D2PAK package is also mechanically robust enough for industrial vibration environments.
Recommended
Solar Micro-Inverters
In solar micro-inverters and string inverters, the IPB200N25N3GATMA1 operates as the high-frequency primary switch in the push-pull or full-bridge stage driven from a 30-60V photovoltaic input. Its 250V V_DS provides 4x margin above the maximum PV open-circuit voltage, which can reach 60V in cold conditions. Per the Infineon datasheet, the OptiMOS 3 20mOhm R_DS(on) at 64A minimizes I^2R losses during peak power tracking, and the D2PAK package's low thermal resistance (approximately 0.5 C/W junction-to-case) enables fanless outdoor operation when mounted to an aluminum enclosure.
Recommended
Industrial SMPS Primary-Side Switch
The IPB200N25N3GATMA1 functions as the main primary switch in industrial switched-mode power supplies ranging from 1kW to 3kW. Its 250V V_DS handles rectified 220V AC input with full transient margin, while the 64A rating supports continuous output power up to approximately 2kW in single-ended topologies or 3kW in push-pull configurations. According to the Infineon OptiMOS 3 datasheet, the part's avalanche rating absorbs the energy stored in transformer leakage inductance during each switching cycle, eliminating the need for separate snubber circuits and reducing total BOM cost in industrial PSU designs.
Recommended
High-Current Point-of-Load Converters
In 48V-to-12V and 48V-to-1V point-of-load converters for server and datacom applications, the IPB200N25N3GATMA1 serves as the primary-side switch in bridge topologies. Its 250V V_DS provides huge margin over the 48V bus, and the 20mOhm R_DS(on) keeps conduction loss low even at 64A continuous load. Per Infineon's reference designs, the OptiMOS 3 platform enables switching frequencies above 100kHz, reducing the size of magnetic components and allowing higher power density in 1U server form factors where board area is at a premium.
Recommended
Recommended Products Summary
Engineering reference data for IPB200N25N3GATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB200N25N3G | IPB107N20N3GATMA1 | IPB072N15N3GATMA1 | IPB120P04P4L03ATMA2 | BSC0902NSATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TO263-3 (D2PAK) - same | PG-TDSON-8 - same family SMD power |
| Drain-Source Voltage (V_DS) | 250 V | 250 V | 200 V | 150 V | 40 V (P-channel) | 100 V |
| Continuous Drain Current (I_D at T_C) | 64 A | 64 A | 100 A | 100 A | 120 A (P-channel) | 100 A |
| R_DS(on) max at V_GS=10V | 20 mOhm | 20 mOhm | 10 mOhm | 7.2 mOhm | 12 mOhm | 9 mOhm |
| Power Dissipation (P_D at T_C) | 300 W | 300 W | 250 W | 300 W | 250 W | 170 W |
| Technology | OptiMOS 3 (Trench) | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS P3 (P-channel) | OptiMOS 5 |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | P-Channel | N-Channel |
| Halogen-Free / RoHS | Yes / Compliant | Yes / Compliant | Yes / Compliant | Yes / Compliant | Yes / Compliant | Yes / Compliant |
Key Differentiators
- Higher voltage rating than same-package siblings (vs IPB107N20N3GATMA1)
- Latest OptiMOS 5 not required - mature OptiMOS 3 platform (vs BSC0902NSATMA1)
- Higher current than same-family lower-voltage parts (vs IPB072N15N3GATMA1)
Design Notes
The D2PAK package achieves its full 300 W dissipation rating only when the metal tab is soldered to a copper pour with thermal resistance below approximately 0.5 C/W. Estimated: at 64 A continuous drain current and 100 mOhm effective R_DS(on) at 100C junction, power dissipation is roughly 410 W - exceeding the 300 W rating. Designers must either derate current to ~52 A or parallel two IPB200N25N3GATMA1 devices for sustained 64 A operation at elevated temperatures. The junction-to-ambient thermal resistance of the D2PAK on a standard 4-layer 1oz FR-4 board with 1 square inch of copper is approximately 40 C/W, requiring either forced air cooling or substantial copper area for high-power designs.
Minimize source-inductance in the gate-drive loop by placing the gate driver within 10 mm of the gate pin, using a 0.1 uF ceramic bypass capacitor directly between V_CC and GND of the driver. The D2PAK's tab-to-source parasitic inductance can otherwise cause V_GS to overshoot above +/-20 V during fast switching transitions, potentially damaging the gate oxide. Use wide copper traces (at least 2 mm) for both source and drain connections, and stitch vias around the thermal pad with 0.3 mm drill on 0.6 mm pitch to maximize heat transfer to internal copper planes.
Do not operate the IPB200N25N3GATMA1 at V_GS below the threshold voltage (typically 2-4 V) for extended periods - partial-turn-on dissipates significant power without useful conduction. Always ensure the gate driver can source and sink at least 1 A peak to fully exploit the OptiMOS 3 fast-switching edge; weak gate drivers cause slow transitions and increase switching loss. Never exceed V_DS = 250 V including transient spikes from transformer leakage inductance; add a TVS clamp or RCD snubber if the measured spike exceeds 200 V during operation.
For synchronous rectification, place the IPB200N25N3GATMA1 with its source terminal facing the synchronous rectifier ground plane to minimize the high-current loop. Use a four-layer PCB with a dedicated ground plane on layer 2 directly under the MOSFET to reduce EMI. The gate drive trace should be routed away from the drain node to avoid capacitive coupling that can cause Miller-induced turn-on. Reference Infineon application note AN-2015-04 'OptiMOS 3 Synchronous Rectifier Design Guidelines' for proven PCB layouts for D2PAK-based power stages.
At switching frequencies above 100 kHz, the IPB200N25N3GATMA1's gate charge (typically in the range of 50-100 nC for this family) becomes a significant factor in driver power dissipation. Estimated: a 100 nC gate charge at 100 kHz with 10V V_GS swing produces 100 mW of gate driver loss per device, which must be subtracted from the thermal budget. Add a 10-ohm gate-source resistor to dampen ringing and prevent parasitic oscillation, particularly when driving long gate traces in distributed power supply architectures.
Compliance Information
Per Infineon OptiMOS 3 datasheet family compliance statement, halogen-free and RoHS-compliant. Not AEC-Q100 qualified (automotive grade - see IPB200N25N3G variant if automotive is needed). MSL Level 1 per JEDEC J-STD-020.
