IPB35N10S3L26ATMA1 vs IPB024N10N5ATMA1 Comparison
Detailed side-by-side comparison of IPB35N10S3L26ATMA1 by Infineon and IPB024N10N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPB35N10S3L26ATMA1 β ActiveInfineon
IPB024N10N5ATMA1 - 100V 2.4mΞ© OptiMOS 5 N-Channel MOSFET | Infineon
IPB024N10N5ATMA1 β ActiveSpecification Comparison
| Parameter | IPB35N10S3L26ATMA1 | IPB024N10N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.15 | $1.86 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS-T | β |
| Channel Type | N-Channel | β |
| Maximum Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC | 35 A | β |
| Power Dissipation (PD) at TC | 71 W | β |
| Package Type | PG-TO263-3 (D2PAK-2) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Channel Mode | Enhancement | β |
| RDS(on) (typical per Infineon product page) | 26.3 mΞ© | β |
| Typical Gate Charge Qg @ Vgs | 80 nC | β |
| Maximum Drain-Source Resistance Rds | 1.7 mΞ© (per RS Components listing) | β |
| Minimum Operating Temperature | -55 C | β |
| Maximum Power Dissipation Pd | 81 W (per RS Components listing) | β |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 qualification status] | β |
| Technology | β | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, TC=25C) | β | 180 A |
| Power Dissipation (PD, TC=25C) | β | 250 W |
| On-Resistance RDS(on) max @ VGS=10V | β | 2.4 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: VGS(th) value] |
| Gate Charge Qg typ @ VGS=10V | β | [DATA_NEEDED: Qg total gate charge] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total gate charge] |
| Input Capacitance Ciss | β | [DATA_NEEDED: Ciss value] |
| Output Capacitance Coss | β | [DATA_NEEDED: Coss value] |
| Reverse Recovery Charge Qrr | β | [DATA_NEEDED: Qrr value] |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Package | β | PG-TO263-7 (D2PAK-7) |
| MSL Level | β | 1 (unlimited floor life at <30C/85% RH) |
| Packaging | β | Tape & Reel (13-inch reel) |
| Halogen-Free | β | Yes (per Infineon product family policy) |