IPB35N10S3L26ATMA1 vs IPD5N25S3430ATMA1 Comparison
Detailed side-by-side comparison of IPB35N10S3L26ATMA1 by Infineon and IPD5N25S3430ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPB35N10S3L26ATMA1 β ActiveInfineon
IPD5N25S3430ATMA1 - 250V 5A N-Channel OptiMOS MOSFET | Infineon
IPD5N25S3430ATMA1 β ActiveSpecification Comparison
| Parameter | IPB35N10S3L26ATMA1 | IPD5N25S3430ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.15 | $0.39 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS-T | β |
| Channel Type | N-Channel | β |
| Maximum Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC | 35 A | β |
| Power Dissipation (PD) at TC | 71 W | β |
| Package Type | PG-TO263-3 (D2PAK-2) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Channel Mode | Enhancement | β |
| RDS(on) (typical per Infineon product page) | 26.3 mΞ© | β |
| Typical Gate Charge Qg @ Vgs | 80 nC | β |
| Maximum Drain-Source Resistance Rds | 1.7 mΞ© (per RS Components listing) | β |
| Minimum Operating Temperature | -55 C | β |
| Maximum Power Dissipation Pd | 81 W (per RS Components listing) | β |
| RoHS Status | [DATA_NEEDED: RoHS status] | ROHS3 Compliant |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 qualification status] | β |
| Transistor Type | β | N-Channel MOSFET |
| Technology | β | OptiMOS (planar-trench) |
| Drain-Source Voltage (VDS) | β | 250 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 5 A |
| Pulsed Drain Current (IDM) | β | 20 A |
| RDS(on) max @ VGS=10V | β | 430 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | β | 3 V typ / 4 V max |
| Input Capacitance (Ciss) | β | 422 pF typical |
| Power Dissipation (PD, Tc=25Β°C) | β | 41 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Package | β | PG-TO252-3-313 (DPAK, surface mount) |
| Automotive Qualification | β | AEC-Q101 |
| Lead Finish | β | Matte Tin (lead-free) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Configuration | β | Single, 3-pin (2+Tab) |