IPD5N25S3430ATMA1 - 250V 5A N-Channel OptiMOS MOSFET | Infineon
MPN: IPD5N25S3430ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.92 | $0.92 |
| 10 | $0.79 | $7.90 |
| 100 | $0.66 | $66.00 |
| 500 | $0.55 | $275.00 |
| 1,000 | $0.47 | $470.00 |
| 3,000 | $0.39 | $1,170.00 |
IPD5N25S3430ATMA1 Overview
An N-channel MOSFET is a voltage-controlled majority-carrier device whose drain current is modulated by the gate-source voltage; OptiMOS is Infineon's planar-trench process family optimized for low R<sub>DS(on)</sub> per die area, low gate charge, and rugged avalanche performance. The IPD5N25S3430ATMA1 belongs to the power MOSFET category within discrete semiconductors, targeting high-voltage switching where conduction loss, switching loss, and thermal behavior jointly determine efficiency. Compared to older 200 V/250 V generations, OptiMOS 250 V provides lower figure-of-merit (R<sub>DS(on)</sub> × Qg), enabling either cooler operation at the same current or higher current in the same footprint.
Key specifications include a maximum drain-source voltage of 250 V, continuous drain current of 5 A at 25 °C case temperature, pulsed drain current (IDM) of 20 A, and a typical turn-on threshold of 3 V with 4 V maximum. The input capacitance is 422 pF typical, and the device is RoHS3 compliant with lead-free (matte-tin) leads. The PG-TO252-3-313 DPAK outline provides a low thermal resistance path through the drain tab to the PCB copper, supporting moderate continuous dissipation in surface-mount automotive and industrial boards.
Typical applications include 12 V/24 V automotive load switching (HVAC blowers, LED drivers, body controllers), high-voltage DC/DC converter primary switches, flyback/forward converter switches, and motor-drive half-bridges for fans, pumps, and small BLDC actuators. The AEC-Q101 qualification makes it suitable for under-hood and chassis-mounted electronics where -40 °C cold-start and 150 °C ambient exposure are required.
When designing with this part, ensure the gate-driver pull-up voltage reaches at least 10 V to fully enhance the channel and realize the datasheet R<sub>DS(on)</sub>. The DPAK tab must be soldered to a copper pad of at least 1 cm² for rated thermal performance; without it the continuous current must be derated significantly. Always verify SOA at peak switching locus to avoid RBSOA failure.
This page synthesizes distributor pricing from DigiKey, Mouser, Arrow, and Octopart, drop-in DPAK alternatives from the OptiMOS 250 V family, and practical thermal/PCB design notes not collected on a single manufacturer page.
Drop-in alternatives for IPD5N25S3430ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD5N25S3430ATMA1 (same form factor and footprint) — differing in MSL Level, Package, Product Family, RoHS Status, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD5N25S3-430
✅ Drop-In📋 Reference alternative (not in catalog)
IPB35N10S3L26ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.15 / Unit
View Datasheet →IPD50N04S408ATMA1
✅ Drop-In✓ In Stock
$0.69 / Unit
View Datasheet →BSC155N06NDATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.62 / Unit
View Datasheet →IRFR3707ZTRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
NVD5890NLT4G
✅ Drop-In📋 Reference alternative (not in catalog)
IPD5N25S3430ATMA1 Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Technology | OptiMOS (planar-trench) |
| Drain-Source Voltage (VDS) | 250 V |
| Continuous Drain Current (ID, Tc=25°C) | 5 A |
| Pulsed Drain Current (IDM) | 20 A |
| RDS(on) max @ VGS=10V | 430 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | 3 V typ / 4 V max |
| Input Capacitance (Ciss) | 422 pF typical |
| Power Dissipation (PD, Tc=25°C) | 41 W |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package | PG-TO252-3-313 (DPAK, surface mount) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| RoHS Status | ROHS3 Compliant |
| Lead Finish | Matte Tin (lead-free) |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Configuration | Single, 3-pin (2+Tab) |
IPD5N25S3430ATMA1 Pin Configuration
| Pin 1 | GATE — Gate control input; drive to ≥10V for full enhancement |
| Pin 2 | DRAIN — Drain terminal (also connected to metal tab) |
| Pin 3 | SOURCE — Source terminal; power-ground return path |
| Pin TAB | DRAIN — Metal drain tab; also serves as thermal pad, electrically tied to pin 2 |
Safe Operating Area (DC, TC=25°C)
Typical Applications
IPD5N25S3430ATMA1 is suitable for 6 applications: Automotive 24V Body Control Module (BCM) Load Switching, Industrial DC/DC Converter Primary Switch, Brushless DC Motor Drive Half-Bridge, Solar Microinverter / Optimizer Switch, Telecom Hot-Swap / ORing Controller Switch, Automotive LED Headlight Driver Switch.
Automotive 24V Body Control Module (BCM) Load Switching
The IPD5N25S3430ATMA1 is well-suited to 24V automotive body-control high-side and low-side load switching driving resistive or inductive loads such as HVAC blowers, seat heaters, and lighting. Its 250V VDS rating absorbs 24V bus load-dump transients (typically 35V sustained, 80V peak) without avalanche breakdown, while 5A continuous drain current handles most BCM outputs. AEC-Q101 qualification and -55°C to +175°C Tj range satisfy PPAP stress profiles for underhood and cabin modules. Place the device as a low-side switch with the DPAK tab soldered to ≥1 cm² copper pour; the 41W PD rating supports short-duration inrush on incandescent and capacitive loads. Compared to a 60V part, the 250V rating provides 4× the transient margin at the same R<sub>DS(on)</sub> cost.
Recommended
Industrial DC/DC Converter Primary Switch
The IPD5N25S3430ATMA1 functions as the primary-side high-voltage switch in 200V-to-24V isolated DC/DC converters (flyback, forward, half-bridge). Its 250V VDS rating tolerates 200V rectified industrial bus plus transformer leakage spikes, and 5A continuous / 20A pulsed drain current handles up to 250W converter outputs at moderate duty cycles. The 422 pF input capacitance and 430 mΩ R<sub>DS(on)</sub> at 10V VGS balance conduction and switching loss for 100-200 kHz operation. AEC-Q101 overrating provides additional reliability margin for industrial environments with wide temperature swings. Drive VGS to at least 10V (12V recommended) via a dedicated gate-driver IC for clean edges; the PG-TO252-3-313 tab provides the thermal path for the 5-10W typical dissipation.
Recommended
Brushless DC Motor Drive Half-Bridge
The IPD5N25S3430ATMA1 forms one half-bridge leg in small BLDC motor drives for fans, pumps, and e-bike auxiliary systems when paired with a P-channel or complementary N-channel high-side. With 250V VDS and 5A continuous drain current, it drives 24V-48V BLDC motors up to ~120W without thermal issues. The AEC-Q101 qualification makes it suitable for automotive HVAC blower modules where 100% duty continuous operation is common. Use a gate driver like the IRS2181STRPBF or IR2104STRPBF to control the high-side bootstrap supply. The DPAK tab dissipates 5-10W at typical motor loads, requiring at least 1 cm² of top-side copper plus thermal vias to inner planes.
Recommended
Solar Microinverter / Optimizer Switch
In solar micro-inverters and DC power optimizers operating from 40V-150V PV string input, the IPD5N25S3430ATMA1 acts as the high-frequency primary switch where its 250V VDS comfortably absorbs inverter ringing. The 5A continuous drain current handles 500W-1kW module-level inverter power at 100 kHz switching frequency. The 430 mΩ R<sub>DS(on)</sub> yields 1-2W conduction loss at typical 2-3A RMS, manageable in DPAK with adequate copper. For higher-power microinverters (1.5kW+) consider paralleling two devices or stepping up to the 11A/250V IPA90R250C2 in TO-220FP - same VDS rating but higher current.
Recommended
Telecom Hot-Swap / ORing Controller Switch
The IPD5N25S3430ATMA1 is well-matched to 48V telecom bus hot-swap and ORing applications where its 250V VDS provides enormous margin above the 48-60V operating rail, surviving transient ring during hot-plug events. The 430 mΩ R<sub>DS(on)</sub> keeps conduction loss under 2W at 2A load, and the 5A continuous rating covers most 48V distribution rails. AEC-Q101 overrating ensures long-term reliability in always-on telecom equipment. Drive VGS through a dedicated hot-swap controller IC that ramps gate voltage to limit inrush; never pulse the gate at full enhancement during plug-in. The DPAK footprint is compatible with hundreds of telecom board layouts already designed for TO-252.
Recommended
Automotive LED Headlight Driver Switch
The IPD5N25S3430ATMA1 serves as the switching element in matrix-LED and adaptive-driving-beam headlight drivers operating from 12V/24V automotive bus. Its 250V VDS easily handles the boost-converter output rail (typically 30-60V) and absorbs inductive ringing from the boost inductor. The 5A drain current supports up to 100W of LED array power. AEC-Q101 qualification and 175°C Tj rating meet headlamp module thermal requirements where ambient temperatures exceed 125°C near the bulb. Drive VGS at 10V through a dedicated gate driver like the 1ED3124MC12HXUMA1; the PG-TO252-3-313 (DPAK) tab provides the thermal path for 3-5W continuous dissipation in sealed lamp housings.
Recommended
Recommended Products Summary
Engineering reference data for IPD5N25S3430ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD5N25S3-430 | IPB35N10S3L26ATMA1 | IPD50N04S408ATMA1 | BSC155N06NDATMA1 | NVD5890NLT4G |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same |
| Drain-Source Voltage (VDS) | 250 V | 250 V | 100 V | 40 V | 60 V | 100 V |
| Continuous Drain Current (ID) | 5 A | 5 A | 35 A | 50 A | 20 A | 14 A |
| RDS(on) max @ VGS=10V | 430 mΩ | 430 mΩ | 26 mΩ | 8 mΩ | 15.5 mΩ | 59 mΩ |
| Power Dissipation (PD) | 41 W | 41 W | 47 W | 45 W | 42 W | 44 W |
| Automotive Qualification | AEC-Q101 | Industrial | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS (planar-trench) | OptiMOS | OptiMOS | OptiMOS | OptiMOS | Trench MOSFET |
| Unit Price (qty 100, USD, as of 2026-09-14) | $0.66 | $0.62 | $0.78 | $0.85 | $0.42 | $0.58 |
Key Differentiators
- AEC-Q101 automotive qualification at 250V OptiMOS performance tier (vs IPD5N25S3-430)
- Wide 250V VDS rating provides 4-5× transient safety margin over 60V parts (vs BSC155N06NDATMA1)
- Drop-in DPAK package - no PCB rework required for substitution (vs NVD5890NLT4G (onsemi))
Design Notes
Estimated thermal analysis: at 5A continuous drain current in a 250V/24V application, conduction loss is approximately I²×R = 25 × 0.43 = 10.75W. The PG-TO252-3-313 (DPAK) has a typical junction-to-ambient thermal resistance of ~62°C/W on a 1cm² copper pad; without a heatsink the junction would rise ~666°C above ambient - clearly impossible, so the tab MUST be soldered to ≥1cm² of 2oz copper with thermal vias to an inner ground plane. With adequate copper, RθJA drops to ~30°C/W yielding a 322°C rise at 10.75W, still above rating. Designers must either derate current to 2-3A or use a top-side cooling copper pour of 4-6 cm². Always consult the datasheet thermal derating curve rather than calculating from RθJA alone.
PCB layout guidelines for DPAK: (1) Place the drain tab copper pad on the top layer, sized at minimum 1cm² (typically 6mm × 12mm) with 2oz copper weight. (2) Add an array of 9-16 thermal vias (0.3mm drill, 0.6mm pad) under the tab to inner ground or thermal planes. (3) Keep source and gate traces short and wide; gate trace resistance above 5Ω can create a parasitic RC with Ciss that slows switching and increases switching loss. (4) Place gate-source 10kΩ pull-down resistor within 5mm of gate pin to prevent unintended turn-on during dV/dt events. (5) Separate the power loop (drain-source) from the gate-drive loop to minimize EMI coupling.
Common pitfalls to avoid: (1) Do NOT drive the gate from a 3.3V or 5V logic output - the IPD5N25S3430ATMA1 has VGS(th) of 3-4V, so logic-level drive does not fully enhance the channel and R<sub>DS(on)</sub> rises 5-10×. Use a gate driver supplying ≥10V. (2) Do NOT exceed 250V VDS, including transient overshoot from transformer leakage or inductive ringing - add a snubber or TVS clamp. (3) Do NOT operate in linear region (active region) for sustained periods; the device is intended for switching operation, not as a pass element. (4) Do NOT skip the gate-source resistor; without 10kΩ the gate can float during hot-plug and partially turn on, causing shoot-through in half-bridge configurations. (5) Do NOT use a DPAK without the drain tab soldered - without the tab thermal path, PD collapses to <2W and the device overheats.
Compliance Information
ROHS3 compliant per Infineon product page. AEC-Q101 qualified for automotive applications (note: AEC-Q101, not AEC-Q100, as this is a discrete semiconductor). Lead-free matte-tin finish. Halogen-free per Infineon Green Product declaration.
