IPB60R040CFD7ATMA1 vs IPL65R115CFD7AUMA1 Comparison
Detailed side-by-side comparison of IPB60R040CFD7ATMA1 by Infineon and IPL65R115CFD7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΞ© CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 β ActiveInfineon
IPL65R115CFD7AUMA1
IPL65R115CFD7AUMA1 - 650V 24A 115mΞ© CoolMOS CFD7 | Infineon
IPL65R115CFD7AUMA1 β ActiveSpecification Comparison
| Parameter | IPB60R040CFD7ATMA1 | IPL65R115CFD7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.19 | $2.70 |
| Manufacturer | Infineon Technologies | β |
| Product Family | CoolMOS CFD7 | β |
| Technology | Superjunction (SJ) N-Channel MOSFET | CoolMOS CFD7 (Superjunction) |
| Drain-Source Voltage (VDS) | 600 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 50 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max @ VGS=10V | 40 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 4 V | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | β |
| Power Dissipation (Tc=25Β°C) | 227 W | β |
| Operating Temperature Range | -55Β°C to +150Β°C | -55 Β°C to +150 Β°C (TJ) |
| Package | PG-TO263-3-2 (D2PAK) | PG-VSON-4 (VSON-4 EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Integrated Body Diode | Yes - ultra-fast CoolMOS CFD7 diode | β |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Target Applications | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 650 V |
| Continuous Drain Current (ID, Tc) | β | 24 A |
| Power Dissipation (PD, Tc) | β | 144 W |
| On-State Resistance (RDS(on)) | β | 115 mΞ© at VGS=10V, ID=9.7A |
| Gate-Source Voltage (VGS) | β | Β±20 V (max) |
| Gate-Source Threshold (VGS(th)) | β | 3.5 V (typ) |
| Body Diode | β | Integrated Fast Recovery |