IPL65R115CFD7AUMA1 - 650V 24A 115mΩ CoolMOS CFD7 | Infineon
MPN: IPL65R115CFD7AUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.33 | $4.33 |
| 10 | $3.92 | $39.20 |
| 100 | $3.45 | $345.00 |
| 500 | $3.05 | $1,525.00 |
| 1,000 | $2.7 | $2,700.00 |
IPL65R115CFD7AUMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that regulates current flow between its drain and source terminals in response to a gate-source voltage. The IPL65R115CFD7 belongs to the superjunction MOSFET category, which uses alternating P/N epitaxial layers to achieve a much lower RDS(on) × area figure of merit than planar MOSFETs at high blocking voltages. Within the broader taxonomy, it sits as: MOSFET -> power MOSFET -> superjunction MOSFET -> high-voltage MOSFET -> discrete semiconductor. The CFD7 (Fast Body Diode) variant integrates an optimized intrinsic body diode for hard-commutated bridge topologies.
Distinguishing features of this part include its integrated fast body diode with excellent reverse-recovery characteristics (low Qrr), low on-state resistance per silicon area, low gate charge (Qg) that minimizes driver losses, and a Kelvin-source capable PG-VSON-4 package that reduces source-inductance-driven switching losses. The 115 mΩ RDS(on) at full gate drive enables conduction losses under 2.7W at 15A continuous operation, while the 650V drain-source rating provides ample margin for 400V PFC boost, 500V telecom, and universal-input rectified bus rails.
The CoolMOS CFD7 superjunction cell design uses charge-compensation structures to decouple the RDS(on)-BV trade-off that limits planar high-voltage MOSFETs. Compared with prior CoolMOS generations (CFD2/CFD3), the CFD7 family reduces switching losses, tightens RDS(on) distribution, and improves avalanche ruggedness. The integrated fast body diode eliminates the need for an external anti-parallel diode in bridge topologies, simplifying PCB layout and reducing bill-of-material cost.
Typical applications include PFC boost stages in telecom/server SMPS, LLC and half-bridge resonant converters, solar inverters, EV onboard chargers, HID lighting ballasts, and industrial motor drives. The 650V rating suits universal-input (90-264VAC) designs where reflected bus voltages approach 400V DC.
When designing with this MOSFET, ensure gate-drive voltage is at least 10V for full RDS(on) rating, place the gate driver within 5mm of the gate pin to minimize loop inductance, and verify that the heatsink thermal design keeps junction temperature below 150°C under worst-case SOA conditions.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, including cross-brand equivalents validated for pin-compatibility.
Drop-in alternatives for IPL65R115CFD7AUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPL65R115CFD7AUMA1 (same form factor and footprint) — differing in Operating Temperature Range, Technology, Package, MSL Level, Drain-Source Voltage (VDS).
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View Datasheet →IPL65R115CFD7AUMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | CoolMOS CFD7 (Superjunction) |
| Drain-to-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID, Tc) | 24 A |
| Power Dissipation (PD, Tc) | 144 W |
| On-State Resistance (RDS(on)) | 115 mΩ at VGS=10V, ID=9.7A |
| Gate-Source Voltage (VGS) | ±20 V (max) |
| Gate-Source Threshold (VGS(th)) | 3.5 V (typ) |
| Body Diode | Integrated Fast Recovery |
| Operating Temperature Range | -55 °C to +150 °C (TJ) |
| Package | PG-VSON-4 (VSON-4 EP) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
IPL65R115CFD7AUMA1 Pin Configuration
| Pin 1 | Gate — Gate control input; connect to gate-driver output |
| Pin 2 | Drain — Drain terminal; thermally connected to exposed pad |
| Pin 3 | Source — Power source terminal (main current path) |
| Pin 4 | Source (Kelvin) — Kelvin source for gate-drive return; minimizes source-inductance losses |
| Pin EP | Drain / Thermal Pad — Exposed thermal pad; electrically tied to Drain (pin 2); must be soldered to PCB copper for thermal dissipation |
Safe Operating Area (DC, TJ=150°C)
Typical Applications
IPL65R115CFD7AUMA1 is suitable for 6 applications: PFC Boost Stage (Server/Telecom SMPS), LLC Resonant Half-Bridge Converter, Solar Microinverter / String Inverter, EV Onboard Charger (OBC), Industrial Motor Drive (Low-Voltage 400V Class), HID Lighting Ballast and LED Driver.
PFC Boost Stage (Server/Telecom SMPS)
The IPL65R115CFD7AUMA1 is well suited for continuous-conduction-mode PFC boost stages in 1-3kW server and telecom SMPS designs operating from universal 90-264VAC input. Its 650V drain-source rating handles a 400V DC bus with comfortable margin, while the integrated fast body diode eliminates the need for an external anti-parallel diode in bridgeless totem-pole topologies. At 115 mΩ typical RDS(on) and 15A average PFC current, conduction losses stay below 27W per switch - manageable on the PG-VSON-4 thermal pad. The CFD7 superjunction cell structure also reduces switching losses by 20-30% versus prior CoolMOS generations, enabling higher switching frequencies (65-130 kHz) and smaller magnetics. Recommended companion parts: 1ED020I12B2XUMA1 (gate driver), XDPE12284C0000XUMA1 (PFC controller).
Recommended
LLC Resonant Half-Bridge Converter
In LLC resonant half-bridge converters for high-density adapters and server PSUs, the IPL65R115CFD7AUMA1 serves as the primary-side switch pair. The 650V rating easily supports 400V nominal bus with peak excursions during resonant transients. The CFD7 family's low Qrr body diode is critical here because it prevents shoot-through losses during the dead-time interval when the LLC tank reverses the transformer's primary current - a problem that plagued earlier superjunction generations. With a typical Qg of around 50nC, the MOSFET can be driven efficiently by a small isolated gate driver like the 1EDN7116GXTMA1. Recommended: pair with resonant tank magnetics from a 1-2kW planar transformer and the IR2110SPBF half-bridge driver as a lower-cost alternative.
Recommended
Solar Microinverter / String Inverter
String and microinverters from 1kW to 5kW use the IPL65R115CFD7AUMA1 in both the PFC boost stage (boosting rectified PV-inverter input to 400V DC bus) and the full-bridge DC-AC switching leg (converting the 400V bus to grid-synchronized AC). The 650V rating exceeds the maximum 400V bus voltage with 60% margin, providing robustness against load-dump and grid-fault transients. The exposed thermal pad of the PG-VSON-4 package dissipates up to 144W at 25°C case temperature, sufficient for 3-5kW inverter legs with proper PCB copper area. The fast body diode reduces dead-time losses to under 1% of total efficiency, supporting 98%+ European-weighted efficiency targets. Recommended companions: 2EDR8258XXUMA1 gate driver, TLD5191ESXUMA1 buck controller for auxiliary rails.
Recommended
EV Onboard Charger (OBC)
The IPL65R115CFD7AUMA1 is a candidate for 3.3 kW to 7.7 kW EV onboard charger PFC and DC-DC stages, where 650V-rated MOSFETs are standard for universal-input (90-264VAC) capability. In a totem-pole bridgeless PFC topology, the CFD7's fast body diode enables hard-switched operation without requiring a SiC diode replacement - the diode reverse recovery is fast enough to keep dead-time switching losses below 5W per cycle. With a 144W power dissipation rating, the PG-VSON-4 package supports continuous 15A operation with proper PCB thermal vias. For higher-power 11kW+ OBC designs, the IPB60R040CFD7ATMA1 (40 mΩ) is preferred for its lower conduction loss. Recommended companions: EiceDRIVER 2EDB7259KXUMA1, XDPL8105XUMA1 controller.
Recommended
Industrial Motor Drive (Low-Voltage 400V Class)
For 400V-class industrial variable-frequency drives (VFDs) controlling 0.75-3kW three-phase motors, the IPL65R115CFD7AUMA1 can be used in the input PFC boost stage and the three-phase inverter switching legs. The 650V rating handles 400V DC bus with 60% margin, supporting regenerative braking transients without avalanche breakdown. The CFD7 superjunction cell provides lower switching losses than IGBTs at low-to-medium switching frequencies (4-16 kHz), enabling smaller heatsinks in compact motor drives. The integrated fast body diode simplifies the inverter's dead-time handling. For higher switching frequencies (>20 kHz), consider silicon-carbide MOSFETs as an alternative. Recommended companions: IRSM808-105MH (intelligent power module reference), TLE94110ESXUMA1 multi-half-bridge driver.
Recommended
HID Lighting Ballast and LED Driver
High-intensity-discharge (HID) lighting ballasts and high-power LED street-light drivers use the IPL65R115CFD7AUMA1 in the PFC boost and buck switching stages. The 650V rating is ideal for 277VAC commercial-lighting inputs where rectified DC bus reaches 390V. The MOSFET's low gate charge enables efficient operation at the 50-100 kHz switching frequencies preferred for compact ballast magnetics. The fast body diode supports transition-mode (boundary-conduction) PFC operation, which is the standard topology for HID ballasts due to its high efficiency and simple control. For LED drivers, the same part can serve in the buck or flyback primary switch position. Recommended companions: XDPL8105XUMA1 (digital PFC + flyback combo), ICE3RBR1765JGXUMA1 (coolSET quasi-resonant flyback controller).
Recommended
Recommended Products Summary
Engineering reference data for IPL65R115CFD7AUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB60R040CFD7ATMA1 | IPD65R380E6ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-VSON-4 | PG-TO-263 (D2PAK) - larger footprint | PG-TO-252 (DPAK) - smaller footprint | PG-TDSON-8 - different pinout |
| Drain-Source Voltage (VDS) | 650 V | 650 V (same) | 650 V (same) | 40 V (different class) |
| RDS(on) at VGS=10V | 115 mΩ | 40 mΩ (-65%) | 380 mΩ (+230%) | 1.1 mΩ (low-voltage class) |
| Body Diode | Fast Recovery (integrated) | Fast Recovery (integrated) | Fast Recovery (integrated) | Standard body diode |
| Technology Family | CoolMOS CFD7 (Superjunction) | CoolMOS CFD7 (same family) | CoolMOS E6 (older generation) | OptiMOS 7 (low-voltage) |
Key Differentiators
- Integrated fast body diode for hard-switched bridge topologies (vs Generic 650V superjunction MOSFETs without CFD optimization)
- Lowest gate-charge class for 115 mΩ 650V MOSFET (vs Planar 650V MOSFETs with similar RDS(on))
- Compact PG-VSON-4 package with exposed thermal pad (vs Larger TO-247 or TO-220 packaged 650V MOSFETs)
Design Notes
Estimated: At ID=15A continuous, RDS(on)=115 mΩ, the conduction loss is approximately 25.9W (15² × 0.115). The PG-VSON-4 package has a typical junction-to-ambient thermal resistance of around 50-62 °C/W on a 1-square-inch PCB copper pour; junction temperature rise would be 70-95°C above 25°C ambient, reaching 95-120°C junction - acceptable but requiring derating at higher ambient. For continuous operation above 18A, add a heatsink or expand copper area to at least 2 square inches.
Place the gate driver within 5mm of the gate pin to minimize the gate-loop inductance. Use a Kelvin-source connection (pin 4) for the gate-driver return path, not the main power source (pin 3), to avoid source-inductance-induced gate- voltage ringing. The exposed thermal pad must be soldered to a continuous PCB copper plane with thermal vias (at least 9 vias of 0.3mm diameter) connecting to inner-plane copper for heat spreading.
Do not exceed VGS of ±20V (absolute maximum) - a 12V gate-drive supply is typical. The integrated fast body diode has limited reverse-recovery ruggedness; do not use this part in applications requiring repetitive avalanche operation. For circuits where VDS may overshoot above 650V (such as hard-switched bridge with long cable leads), add a TVS or RC snubber rated above 650V but below the avalanche rating of 700V.
The CFD7 family's low gate-charge (typical Qg in tens of nC) enables sub-50ns switching transitions, which can cause severe ringing on the drain node. Use a ferrite-bead or RC snubber (10-100Ω + 1-10nF) across drain-source for high-frequency damping. Keep the power-loop area (drain to input cap return) under 1 cm² to minimize parasitic inductance and reduce VDS overshoot during turn-off.
Compliance Information
RoHS compliant and lead-free per Infineon product page. Standard grade (not AEC-Q100 qualified) - for automotive applications, request the AEC-Q100 variant directly from Infineon.
