IPC100N04S5L1R5ATMA1 vs IAUC120N06S5N017ATMA1 Comparison
Detailed side-by-side comparison of IPC100N04S5L1R5ATMA1 by Infineon and IAUC120N06S5N017ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S5L1R5ATMA1
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 β ActiveInfineon
IAUC120N06S5N017ATMA1
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΞ© OptiMOS 5 MOSFET | Infineon
IAUC120N06S5N017ATMA1 β ActiveSpecification Comparison
| Parameter | IPC100N04S5L1R5ATMA1 | IAUC120N06S5N017ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $1.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | β |
| Polarity / Channel Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) Max | 40 V | β |
| Gate-Source Voltage (VGS) Max | 20 V | β |
| Continuous Drain Current (ID) at Tc=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 757 A |
| Power Dissipation (PD) at Tc=25C | 115 W | β |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | β |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | β |
| Operating Temperature Range | -55C to +175C | -55Β°C to +175Β°C |
| Package | PG-TDSON-8-34 (SS08 leadless) | PG-TDSON-8-43 (TDSON-8 EP) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260C peak reflow) | MSL1 (260Β°C peak reflow) |
| AEC-Q101 Qualified | Yes | β |
| RoHS Status | Compliant (Green Product) | β |
| Avalanche Tested | 100% | β |
| Series | β | OptiMOS 5 |
| FET Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 120 A |
| RDS(on) at VGS=10V | β | 1.7 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | β | 3.4 V (typ) |
| Total Gate Charge (Qg) at VGS=10V | β | 95.9 nC |
| Input Capacitance (Ciss) | β | 6.952 nF |
| Reverse Transfer Capacitance (Crss) | β | 84 pF |
| Output Capacitance (Coss) | β | 1.507 nF |
| Power Dissipation (PD, Tc=25Β°C) | β | 167 W |
| AEC-Q101 Qualification | β | Yes (Automotive Grade) |
| RoHS Compliance | β | Green Product (RoHS compliant) |