IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon
MPN: IAUC120N06S5N017ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.95 | $1.95 |
| 10 | $1.78 | $17.80 |
| 100 | $1.62 | $162.00 |
| 500 | $1.45 | $725.00 |
| 1,000 | $1.32 | $1,320.00 |
IAUC120N06S5N017ATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently commutate current in power-conversion circuits. Within the broader power electronics taxonomy, MOSFETs sit alongside IGBTs as the dominant low- to medium-voltage switching devices, hierarchically classified as: MOSFET → power transistor → discrete semiconductor. The OptiMOS™ 5 family represents Infineon's fifth-generation trench technology, delivering the lowest figure of merit (R<sub>DS(on)</sub> × Qg) in 60 V-class automotive MOSFETs, which is critical for reducing conduction and switching losses in high-frequency converters.
Key features include a typical gate charge Qg of 95.9 nC at VGS = 10 V, an input capacitance Ciss of 6.952 nF, and a low reverse-transfer capacitance Crss of 84 pF, enabling fast switching transitions in the 50-200 kHz range. The device's low on-resistance minimizes conduction losses, while the optimized gate charge reduces driver losses. The TDSON-8 EP package with exposed die pad delivers a low thermal resistance path from junction to case, supporting continuous high-current operation with minimal external heatsinking.
Architecturally, the device uses a charge-balanced trench-gate cell structure that achieves exceptionally low R<sub>DS(on)</sub> per unit area while maintaining robust short-circuit capability. The 100% avalanche-tested rating ensures reliability during unclamped inductive switching events common in motor and solenoid drive applications.
Typical applications include automotive 12 V/24 V battery-driven systems such as electric power steering (EPS), braking systems, body electronics, DC-DC converters, and motor control for pumps and fans. The AEC-Q101 qualification makes it suitable for under-the-hood and chassis-mounted modules where temperature cycling and vibration stress are severe.
When designing with this part, ensure VGS is driven to 10 V for the rated R<sub>DS(on)</sub>; a gate-source voltage below 6 V risks entering the Miller plateau region and dramatically increasing conduction losses. For high-di/dt switching, minimize gate-loop inductance and use a Kelvin-source connection when available.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
Drop-in alternatives for IAUC120N06S5N017ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUC120N06S5N017ATMA1 (same form factor and footprint) — differing in Package, MSL Level, Operating Temperature Range, Drain-Source Voltage (VDS), Technology.
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IAUC120N06S5N017ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| FET Type | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Tc=25°C) | 120 A |
| Pulsed Drain Current (IDM) | 757 A |
| RDS(on) at VGS=10V | 1.7 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | 3.4 V (typ) |
| Total Gate Charge (Qg) at VGS=10V | 95.9 nC |
| Input Capacitance (Ciss) | 6.952 nF |
| Reverse Transfer Capacitance (Crss) | 84 pF |
| Output Capacitance (Coss) | 1.507 nF |
| Power Dissipation (PD, Tc=25°C) | 167 W |
| Operating Temperature Range | -55°C to +175°C |
| Package | PG-TDSON-8-43 (TDSON-8 EP) |
| Mounting Type | Surface Mount |
| AEC-Q101 Qualification | Yes (Automotive Grade) |
| MSL Level | MSL1 (260°C peak reflow) |
| RoHS Compliance | Green Product (RoHS compliant) |
IAUC120N06S5N017ATMA1 Pin Configuration
| Pin 1 | GATE — Gate drive input (VGS control) |
| Pin 2 | NC — Not connected (per datasheet) |
| Pin 3 | NC — Not connected (per datasheet) |
| Pin 4 | NC — Not connected (per datasheet) |
| Pin 5 | SOURCE — Source connection (Kelvin source optional) |
| Pin 6 | SOURCE — Source connection |
| Pin 7 | SOURCE — Source connection |
| Pin 8 | SOURCE — Source connection |
| Pin EP | DRAIN — Drain connection (exposed pad, also thermal pad) |
Safe Operating Area - IAUC120N06S5N017ATMA1
Typical Applications
IAUC120N06S5N017ATMA1 is suitable for 6 applications: Electric Power Steering (EPS), Automotive DC-DC Converters (48V Mild-Hybrid), Body Electronics & Load Switching, Braking System (ABS/ESC) Solenoid Drivers, Industrial Motor Drives, Battery Management System (BMS) Protection.
Electric Power Steering (EPS)
The IAUC120N06S5N017ATMA1 is ideally suited for electric power steering motor drive inverters in 12V passenger vehicles and 24V commercial truck platforms. With 120A continuous current capability, the MOSFET easily handles peak assist-motor demands during parking maneuvers when steering torque requirements spike. The 1.7 mΩ R<sub>DS(on)</sub> minimizes I²R conduction losses—critical in the confined steering-column thermal environment where PCB area is limited and passive cooling is the only option. AEC-Q101 qualification satisfies ISO 26262 functional-safety requirements forASIL-D rated steering systems. The 60V VDS rating provides robust transient margin against 24V load-dump events up to 35V, and the 100% avalanche-tested rating ensures reliability during motor back-EMF commutation when inductive kick-back stresses the switch. Typical three-phase inverter designs use three half-bridge pairs (6 MOSFETs total) with gate drive via dedicated three-phase BLDC drivers.
Recommended
Automotive DC-DC Converters (48V Mild-Hybrid)
The IAUC120N06S5N017ATMA1 serves as the primary switching element in 48V-to-12V buck converters used in mild-hybrid electric vehicles (MHEV). Operating at switching frequencies of 100-200 kHz, the MOSFET's 95.9 nC total gate charge and 6.952 nF input capacitance enable efficient hard-switched topologies with manageable driver losses. The 1.7 mΩ R<sub>DS(on)</sub> keeps full-load efficiency above 96% at 3 kW power levels, reducing thermal stress on liquid-cooled cold plates. AEC-Q101 grade and -55°C to +175°C junction temperature range satisfy the under-hood operating envelope. The TDSON-8 EP package's low junction-to-case thermal resistance (~0.9°C/W) supports continuous high-current operation with minimal PCB copper area, and the 100% avalanche rating protects against the voltage transients characteristic of buck-converter synchronous-rectifier commutation.
Recommended
Body Electronics & Load Switching
The IAUC120N06S5N017ATMA1 is deployed in automotive body-control modules for high-current load switching of seat heaters, window lifts, sunroof motors, and adjustable pedals. The 60V VDS rating provides generous headroom for 12V battery transients including jump-start (24V) and load-dump (35V+) events. The MOSFET's low R<sub>DS(on)</sub> eliminates the need for heat sinks even at 30-50A continuous loads typical of seat-heater matrices. AEC-Q101 qualification, MSL1 rating, and 100% avalanche testing meet the reliability targets of body-electronics ECUs with 15-year service life requirements. The compact TDSON-8 EP package (5x6 mm) enables high-density PCB layouts in space-constrained door modules and center-console switch packs. Built-in ESD protection on the gate simplifies PCB design by eliminating external TVS protection.
Recommended
Braking System (ABS/ESC) Solenoid Drivers
The IAUC120N06S5N017ATMA1 is qualified for anti-lock braking system (ABS) and electronic stability control (ESC) hydraulic valve solenoid drivers. ABS solenoid valves require peak currents of 20-40A with precise PWM control at 100-200 Hz to modulate brake-line pressure during emergency stops. The MOSFET's fast switching and low gate charge enable high-fidelity current regulation in closed-loop solenoid control. AEC-Q101 automotive grade and the -55°C to +175°C junction range ensure reliable operation across extreme underbody temperature swings from -40°C cold-soak starts to +150°C near-exhaust-mount conditions. The 100% avalanche-tested rating protects against the inductive flyback voltage spikes generated when ABS solenoid current is interrupted. The 60V VDS rating handles 24V truck electrical systems and load-dump transients without breakdown.
Recommended
Industrial Motor Drives
Beyond automotive, the IAUC120N06S5N017ATMA1 is well-suited for industrial low-voltage motor drives in 24V/48V battery-powered equipment such as electric forklifts, AGVs (automated guided vehicles), and material-handling robots. The 120A continuous current supports 3-5 kW motor power levels typical of pallet-mover drive trains. The 60V VDS rating tolerates 48V battery transients during regenerative braking energy return, and the low R<sub>DS(on)</sub> minimizes losses that would otherwise reduce runtime per battery charge. The wide -55°C to +175°C operating range covers outdoor cold-storage and foundry-ambient installations. Three-phase inverter designs leverage the TDSON-8 EP's low thermal resistance to maintain junction temperature below 125°C at full load without active cooling, simplifying cabinet integration.
Recommended
Battery Management System (BMS) Protection
The IAUC120N06S5N017ATMA1 functions as the main disconnect switch in lithium-ion battery management systems for 12V/24V start-stop and mild-hybrid automotive batteries. Its 120A continuous current handles the full charge/discharge load of the vehicle's 48V mild-hybrid battery pack, while the 60V VDS rating protects against charger-induced transients and parallel-string voltage mismatch events. The MOSFET's 1.7 mΩ R<sub>DS(on)</sub> adds minimal parasitic resistance to the battery pack, preserving usable capacity and reducing heat generation during high-current discharge pulses (engine cranking, regenerative braking). AEC-Q101 qualification and 100% avalanche-tested rating satisfy the BMS functional-safety requirements of ISO 26262 ASIL-C systems. The wide temperature range ensures reliable operation across battery-pack thermal gradients from cold-soak to fast-charge thermal events.
Recommended
Recommended Products Summary
Engineering reference data for IAUC120N06S5N017ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC120N06S5L015ATMA1 | IAUC60N04S6L030HATMA1 | IAUCN08S7L033ATMA1 | IPC100N04S5L1R5ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-43 (TDSON-8 EP) | PG-TDSON-8-43 - same | PG-TDSON-8-43 - same | PG-TDSON-8-43 - same | PG-TDSON-8-43 - same | PG-TDSON-8-43 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 40 V | 80 V | 40 V | 40 V |
| Continuous Drain Current (ID) | 120 A | 120 A | 60 A | 100 A | 100 A | 110 A |
| RDS(on) at VGS=10V | 1.7 mΩ | 1.5 mΩ | 3.0 mΩ | 3.3 mΩ | 1.5 mΩ | 1.1 mΩ |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lowest RDS(on) per package area in 60V OptiMOS 5 family (vs IAUC60N04S6L030HATMA1)
- Same-package upgrade path with lower RDS(on) (vs IAUC120N06S5L015ATMA1)
- Higher VDS rating than 40V alternatives in same package (vs IPC100N04S5L1R5ATMA1)
Design Notes
Estimated: At ID=120A continuous drain current with R<sub>DS(on)</sub>=1.7 mΩ at TJ=25°C, conduction loss is approximately 24.5 W. The TDSON-8 EP package has a typical R<sub>θJC</sub> of ~0.9°C/W, yielding a 22°C junction-temperature rise above the case. For sustained 120A operation, ensure case temperature is maintained below 150°C via PCB copper-pour heatsinking or an aluminum cold plate. Without thermal management, the junction will exceed 175°C within seconds at full load—always derate to 60-80% of rated current in passive-cooled designs.
The TDSON-8 EP package relies on the exposed drain pad for both electrical connection and thermal dissipation. Design PCB land pattern per Infineon's recommended footprint with thermal vias (0.3 mm diameter, 1 mm pitch) connecting to inner-layer copper pours. Minimum 2 oz copper (70 μm) on top layer, with additional 1 oz copper on inner layers for heat spreading. Total thermal pad copper area should be at least 100 mm² for full 167 W dissipation capability. Place gate-drive components within 5 mm of the gate pin to minimize gate-loop inductance, which can otherwise cause ringing and EMI.
Do not operate the gate below VGS=6V—the device enters the Miller plateau region where R<sub>DS(on)</sub> increases dramatically (potentially 5-10×) causing thermal runaway. Always use a dedicated gate-driver IC with VGS=10V drive capability rather than microcontroller GPIO. The device's avalanche rating assumes unclamped inductive switching with energy below the rated EAS parameter—exceeding this energy will cause permanent degradation. For motor-drive and solenoid applications, add external TVS diodes or active clamping to limit VDS transients within the avalanche-safe envelope.
Compliance Information
AEC-Q101 automotive qualified (note: AEC-Q101 is the automotive-discrete extension of AEC-Q100). MSL1 rated for 260°C peak reflow per JEDEC J-STD-020. Green Product (RoHS compliant) per Infineon product declaration. 100% avalanche tested per datasheet specification.
