IPC100N04S5L1R5ATMA1 vs IAUCN04S7N015GATMA1 Comparison
Detailed side-by-side comparison of IPC100N04S5L1R5ATMA1 by Infineon and IAUCN04S7N015GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S5L1R5ATMA1
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 β ActiveInfineon
IAUCN04S7N015GATMA1
IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon
IAUCN04S7N015GATMA1 β ActiveSpecification Comparison
| Parameter | IPC100N04S5L1R5ATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $2.21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | OptiMOS 7 |
| Polarity / Channel Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) Max | 40 V | β |
| Gate-Source Voltage (VGS) Max | 20 V | β |
| Continuous Drain Current (ID) at Tc=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Power Dissipation (PD) at Tc=25C | 115 W | β |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | β |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | β |
| Operating Temperature Range | -55C to +175C | β |
| Package | PG-TDSON-8-34 (SS08 leadless) | PG-THSOG-4-1 (SSO4G 5x6) surface mount |
| Mounting Type | Surface Mount | Surface Mount (IMS-compatible source-down) |
| MSL Level | MSL1 (260C peak reflow) | 1 (per JEDEC J-STD-020) |
| AEC-Q101 Qualified | Yes | β |
| RoHS Status | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% | β |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D) | β | 165 A (Tc) |
| Power Dissipation (P_D) | β | 96 W (Tc) |
| R_DS(on) max | β | 1.53 mΞ© at V_GS=10 V |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical] |
| Operating Junction Temperature | β | -55C to +175C |
| Automotive Qualification | β | AEC-Q101 qualified |
| Total Gate Charge (Q_G) | β | [DATA_NEEDED: total gate charge] |