IPC70N04S5L4R2ATMA1 vs BSZ0901NSIATMA1 Comparison
Detailed side-by-side comparison of IPC70N04S5L4R2ATMA1 by Infineon and BSZ0901NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC70N04S5L4R2ATMA1
IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon
IPC70N04S5L4R2ATMA1 β Active
Specification Comparison
| Parameter | IPC70N04S5L4R2ATMA1 | BSZ0901NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.34 |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | OptiMOS trench N-channel MOSFET |
| Drain to Source Voltage (Vdss) | 40 V | β |
| Continuous Drain Current (Id) @ Tc=25Β°C | 70 A | β |
| Power Dissipation (Pd) @ Tc=25Β°C | 50 W | β |
| R_DS(on) Max @ Vgs=10V | 4.2 mΞ© (typ) | β |
| Gate Threshold (Vgs(th)) | Logic Level (4.5 V max Rds On, Min Rds On) | β |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V | β |
| Package | PG-TDSON-8-34 (Surface Mount) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Operating Temperature (Tj) | -55Β°C to +175Β°C | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260Β°C peak reflow) | β |
| Automotive Qualification | AEC-Q101 | β |
| Avalanche Tested | 100% (60 A production test) | β |
| RoHS Status | Compliant (Green Product) | Compliant |
| Configuration | Single with Built-in Diode | β |
| Case Connection | DRAIN | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSZ0901NSIATMA1 |
| Series | β | OptiMOS 25V |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Ta=25C | β | 25 A |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| Power Dissipation (PD) at Ta=25C | β | 2.1 W |
| Power Dissipation (PD) at Tc=25C | β | 69 W |
| Pin Count | β | 8 |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge Qg] |
| Operating Temperature Range | β | -55 C to +150 C (typical MOSFET range) |
| Packaging | β | Tape & Reel (ATMA1 suffix = 13-inch reel) |