IPD034N06N3GATMA1 vs IRL40S212ARMA1 Comparison

Detailed side-by-side comparison of IPD034N06N3GATMA1 by Infineon and IRL40S212ARMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 βœ“ Active

Specification Comparison

Parameter IPD034N06N3GATMA1 IRL40S212ARMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.51 $2.31
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 β€”
Technology N-Channel Trench MOSFET (OptiMOS 3) StrongIRFETβ„’ (planar N-channel)
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID) at Tc 100 A β€”
Maximum Power Dissipation (Ptot) 167 W β€”
On-Resistance RDS(on) max at VGS=10V 3.4 mOhm β€”
Gate Threshold Voltage VGS(th) 4 V at 93 uA β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: max VGS rating] [DATA_NEEDED: VGS max]
Package PG-TO252-3 (DPAK) PG-TO263-3 (D2PAK)
Mounting Type Surface Mount Surface Mount
Pin Configuration 3-Pin (2 + Tab) β€”
Operating Temperature Range [DATA_NEEDED: Tj min/max] [DATA_NEEDED: Tj max]
RoHS Status Compliant (Pb-free green finish) Compliant
Automotive Qualified Yes (per Infineon product page) β€”
MSL Level [DATA_NEEDED: MSL rating] 1 (unlimited)
Part Family β€” StrongIRFETβ„’
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID, Tc) β€” 195 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) β€” 1.9 mOhm max
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typ]
Power Dissipation (PD, Tc) β€” 231 W
Lead-Free β€” Yes

Datasheets & Resources

Browse All Products Create BOM Request Quote