IPD038N06NF2SATMA1 vs IPD600N25N3GATMA1 Comparison
Detailed side-by-side comparison of IPD038N06NF2SATMA1 by Infineon and IPD600N25N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD600N25N3GATMA1 - 250V 25A OptiMOS 3 N-MOSFET DPAK | Infineon
IPD600N25N3GATMA1 β ActiveSpecification Comparison
| Parameter | IPD038N06NF2SATMA1 | IPD600N25N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $0.98 |
| FET Type | N-Channel | β |
| Technology | OptiMOS (Trench) | N-Channel MOSFET (trench gate) |
| Drain-Source Voltage (VDS) | 60 V | 250 V |
| Continuous Drain Current (ID) at TC=25Β°C | 120 A | β |
| Continuous Drain Current (ID) at TA=25Β°C | 20 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 3.85 mΞ© max | β |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Typical Gate Charge (Qg) at VGS=10V | 68 nC | β |
| Input Capacitance (Ciss) | 6700 pF | β |
| Output Capacitance (Coss) | 670 pF | β |
| Reverse Transfer Capacitance (Crss) | 43 pF | β |
| Power Dissipation (PD) at TA=25Β°C | 3 W | β |
| Power Dissipation (PD) at TC=25Β°C | 107 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55 C to +175 C |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK), 3-pin (2+tab) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | β |
| Channel Mode | Enhancement | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IPD600N25N3GATMA1 |
| Series | β | OptiMOS 3 |
| Continuous Drain Current (ID) at Tc | β | 25 A |
| Power Dissipation (Pd) at Tc | β | 136 W |
| On-Resistance RDS(on) max | β | 60 mOhm |
| Gate Charge x RDS(on) FOM | β | Excellent (per Infineon datasheet) |
| Lead Plating | β | Pb-free |
| RoHS Compliance | β | Compliant |
| Halogen-Free | β | Yes (per IEC 61249-2-21) |
| JEDEC Qualification | β | Qualified per JEDEC for target application |