IPD600N25N3GATMA1 - 250V 25A OptiMOS 3 N-MOSFET DPAK | Infineon
MPN: IPD600N25N3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.98 | $980.00 |
IPD600N25N3GATMA1 Overview
What is an N-channel MOSFET? An N-channel MOSFET (NMOS) is a voltage-controlled semiconductor switch in which applying a positive gate-source voltage creates an n-type conduction channel between drain and source. MOSFETs sit within the hierarchy: power MOSFET -> discrete semiconductor -> power management component. The 250 V OptiMOS 3 family targets high-frequency switching applications where both low conduction loss (RDS(on)) and low switching loss (Qg) are essential.
Key features include an excellent gate-charge x RDS(on) figure-of-merit (FOM), very low on-resistance RDS(on) of 60 mOhm maximum, 175 C maximum operating junction temperature, Pb-free lead plating, RoHS compliance, halogen-free compliance per IEC 61249-2-21, and JEDEC qualification. The 60 mOhm RDS(on) at 10 V VGS significantly reduces conduction losses versus older planar MOSFET generations.
The OptiMOS 3 technology uses an advanced trench gate structure that minimizes the cell pitch while maintaining low gate charge, achieving a 40-50% RDS(on) reduction versus previous OptiMOS 2 generations at the same voltage class. The DPAK (TO-252) package provides an industry-standard footprint with a tab acting as the drain connection, simplifying PCB layout and heatsink attachment.
Typical applications include synchronous rectification in 48 V systems, primary-side switches in DC-DC converters, uninterruptable power supplies (UPS), inverters for DC motor drives, and high-frequency switched-mode power supplies. The part is also suited to telecom brick converters and industrial SMPS where 200-250 V breakdown is required.
When designing with this device, ensure that the gate driver can supply the specified gate charge at the desired switching frequency; under-sized gate drives cause partial turn-on and excessive switching loss. Thermal management through the drain tab is critical because most of the heat exits through the package lead.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IPD600N25N3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD600N25N3GATMA1 (same form factor and footprint) — differing in Package, Drain-Source Voltage (VDS), Operating Temperature Range, Technology, Halogen-Free.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPB200N25N3GATMA1
✅ Drop-In✓ In Stock
$1.65 / Unit
View Datasheet →IPD90P04P4L04ATMA2
✅ Drop-In✓ In Stock
$1.22 / Unit
View Datasheet →IPD038N06NF2SATMA1
✅ Drop-In✓ In Stock
$0.95 / Unit
View Datasheet →IPD90P04P405ATMA2
✅ Drop-In✓ In Stock
$0.69 / Unit
View Datasheet →IPB070N10N3GATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPD600N25N3GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPD600N25N3GATMA1 |
| Series | OptiMOS 3 |
| Technology | N-Channel MOSFET (trench gate) |
| Drain-Source Voltage (VDS) | 250 V |
| Continuous Drain Current (ID) at Tc | 25 A |
| Power Dissipation (Pd) at Tc | 136 W |
| On-Resistance RDS(on) max | 60 mOhm |
| Gate Charge x RDS(on) FOM | Excellent (per Infineon datasheet) |
| Operating Junction Temperature | -55 C to +175 C |
| Package | PG-TO252-3 (DPAK), 3-pin (2+tab) |
| Mounting Type | Surface Mount |
| Lead Plating | Pb-free |
| RoHS Compliance | Compliant |
| Halogen-Free | Yes (per IEC 61249-2-21) |
| JEDEC Qualification | Qualified per JEDEC for target application |
IPD600N25N3GATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input; driven by 10V VGS to fully enhance the channel |
| Pin 2 | Drain — Drain connection; electrically and thermally connected to the package tab |
| Pin 3 | Source — Source connection; reference for gate drive and Kelvin sense if used |
Safe Operating Area (DC)
Typical Applications
IPD600N25N3GATMA1 is suitable for 6 applications: 48 V Bus Synchronous Rectification, DC-DC Converter Primary Switch, Uninterruptible Power Supply (UPS), DC Motor Drive Inverter, Telecom Brick Converter, Solar Inverter DC Side.
48 V Bus Synchronous Rectification
The IPD600N25N3GATMA1 is designed for synchronous rectification on 48 V telecom and server power buses. Its 250 V VDS provides more than 4x margin over 48 V, and its 60 mOhm RDS(on) at 10 V VGS keeps conduction loss at approximately 6 W at 10 A. Compared to a Schottky diode replacement, the synchronous MOSFET solution typically recovers 1-2% efficiency at full load, which compounds significantly in multi-kW data-center converters operating continuously.
Recommended
DC-DC Converter Primary Switch
The IPD600N25N3GATMA1 works as a primary-side switch in 100-200 V DC-DC converter topologies including forward, push-pull, and half-bridge configurations. With 250 V VDS and 25 A ID, it handles 1-3 kW designs at 100 kHz-500 kHz switching frequencies. The OptiMOS 3 FOM (Qg x RDS(on)) is excellent per Infineon's datasheet, enabling smaller magnetics and higher power density compared to older planar MOSFET generations.
Recommended
Uninterruptible Power Supply (UPS)
In UPS inverter stages and battery-backed converters, the IPD600N25N3GATMA1's 250 V VDS rating comfortably covers 192 V DC battery bus configurations. The 25 A continuous current at Tc supports 5-6 kVA single-phase inverter designs. The 175 C maximum junction temperature and JEDEC qualification ensure long-term reliability in always-on UPS applications where thermal cycling and continuous operation are the norm.
Recommended
DC Motor Drive Inverter
The IPD600N25N3GATMA1 is positioned for DC motor drive inverters operating from 48-200 V DC bus supplies, such as industrial automation drives, electric forklift traction inverters, and robotics motor controllers. Its 60 mOhm RDS(on) and 25 A ID deliver efficient switching at PWM frequencies up to 50 kHz. The DPAK package is footprint-compatible with most industrial motor-drive reference designs, simplifying BOM and PCB reuse.
Recommended
Telecom Brick Converter
The IPD600N25N3GATMA1 is suited for 100-200 V input telecom brick converters delivering 48 V or 12 V outputs at 500 W-2 kW. The 250 V rating provides margin for rectified 110/220 V AC front-end operation with PFC boost stage. The combination of low RDS(on) and low gate charge enables >95% efficiency targets required by modern 80 PLUS Titanium telecom PSU standards.
Recommended
Solar Inverter DC Side
The IPD600N25N3GATMA1 fits solar inverter DC-side switching at the MPPT stage where the input voltage from string panels is typically below 200 V (open-circuit). Its 250 V VDS and 60 mOhm RDS(on) provide reliable switching for 3-5 kW residential string inverters. The Pb-free lead plating and halogen-free compliance meet IEC 61249-2-21 requirements for solar installations in residential markets.
Recommended
Recommended Products Summary
Engineering reference data for IPD600N25N3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB200N25N3GATMA1 | IPD90P04P4L04ATMA2 | IPD038N06NF2SATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Polarity | N-Channel | N-Channel | P-Channel | N-Channel |
| VDS max | 250 V | 250 V | 40 V | 60 V |
| Continuous ID at Tc | 25 A | 50 A | 90 A | 38 A |
| RDS(on) max at 10V VGS | 60 mOhm | 60 mOhm | 4.0 mOhm | 3.8 mOhm |
| Technology Family | OptiMOS 3 | OptiMOS 3 | OptiMOS P2 | OptiMOS 2 |
| Max Junction Temperature | 175 C | 175 C | 175 C | 175 C |
Key Differentiators
- Higher continuous current rating at Tc (vs IPD038N06NF2SATMA1)
- Industry-standard DPAK package (vs IPB200N25N3GATMA1 (D2PAK))
- JEDEC-qualified reliability (vs Generic 250 V NMOS)
Design Notes
Estimated: at 10 A continuous drain current with 200 mOhm effective conduction resistance, power dissipation is approximately 20 W, requiring the DPAK tab to be soldered to at least 1 square inch of copper pour on a 2 oz copper PCB. Without adequate copper, the junction-to-ambient thermal resistance of the DPAK (typically 50-62 C/W on 1 oz 1in2 copper) limits continuous current to 4-5 A at room temperature. For full 25 A operation, an external heatsink attached to the tab is required.
Keep the gate drive loop as small as possible by placing the gate driver within 10 mm of the gate pin. The high di/dt during turn-on (hundreds of A/us in hard-switched applications) can cause ringing and false triggering if the gate-source loop inductance exceeds 10 nH. Use a Kelvin-source connection if available, or minimize source-inductance by using a wide ground return trace adjacent to the gate trace.
The DPAK drain tab must be soldered to a copper pour of at least 50 mm x 50 mm with thermal vias to the opposite PCB layer or inner plane. According to IPC-2152 and Infineon application notes, multiple thermal vias (typically 9-16 vias of 0.3 mm diameter) reduce the junction-to-ambient thermal resistance by 30-40% versus a single via. Without thermal vias, the effective thermal resistance is dominated by the PCB copper area.
Do not exceed the VDS rating of 250 V even briefly during switching transients. In hard-switched half-bridge or flyback topologies, ringing on the drain can exceed 200 V even with a 100 V bus supply. Use an RC snubber (typically 10-22 ohm + 100-470 pF) or a TVS clamp to limit drain-voltage overshoot below 250 V. The JEDEC-qualified maximum rating does not include switching overshoot margin.
Compliance Information
RoHS and halogen-free compliant per Infineon datasheet. Pb-free lead plating. Not AEC-Q100 qualified (industrial/commercial application).
