IPD068N10N3GATMA1 vs IPB024N10N5ATMA1 Comparison

Detailed side-by-side comparison of IPD068N10N3GATMA1 by Infineon and IPB024N10N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD068N10N3GATMA1 IPB024N10N5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $1.86
Manufacturer Infineon Technologies β€”
Part Number IPD068N10N3GATMA1 β€”
Technology OptiMOS 3 (N-Channel, Enhancement Mode) OptiMOS 5 N-Channel MOSFET (trench, shielded gate)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc 90 A β€”
On-Resistance RDS(on) max 6.8 mOhm β€”
Power Dissipation (PD) at Tc 150 W β€”
Gate Threshold Voltage VGS(th) 2.0 V to 4.0 V (typical) β€”
Package PG-TO252-3 (DPAK, 2 leads + tab) PG-TO263-7 (D2PAK-7)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55 C to +175 C β€”
Channel Type N-Channel β€”
Configuration Single β€”
RoHS Status Compliant Compliant
MSL Level 1 1 (unlimited floor life at <30C/85% RH)
Packing Tape & Reel (T/R) β€”
Qualification Industrial (non-automotive) β€”
Continuous Drain Current (ID, TC=25C) β€” 180 A
Power Dissipation (PD, TC=25C) β€” 250 W
On-Resistance RDS(on) max @ VGS=10V β€” 2.4 mΞ©
Gate Threshold Voltage VGS(th) typ β€” [DATA_NEEDED: VGS(th) value]
Gate Charge Qg typ @ VGS=10V β€” [DATA_NEEDED: Qg total gate charge]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg total gate charge]
Input Capacitance Ciss β€” [DATA_NEEDED: Ciss value]
Output Capacitance Coss β€” [DATA_NEEDED: Coss value]
Reverse Recovery Charge Qrr β€” [DATA_NEEDED: Qrr value]
Operating Temperature Range β€” -55C to +175C (junction)
Packaging β€” Tape & Reel (13-inch reel)
Halogen-Free β€” Yes (per Infineon product family policy)

Datasheets & Resources

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