IPD090N03LGATMA1 vs IPD060N03LGATMA1 Comparison
Detailed side-by-side comparison of IPD090N03LGATMA1 by Infineon and IPD060N03LGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD090N03LGATMA1 | IPD060N03LGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.34 | $0.20 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (Vdss) | 30 V | β |
| Continuous Drain Current (Id) @ Tc=25C | 40 A | β |
| Continuous Drain Current (Id) @ Tc=100C | [DATA_NEEDED: Id at 100C] | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Id] | β |
| Maximum Power Dissipation (Pd) @ Tc=25C | 42 W | β |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | 9 mOhm (typical) | β |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | [DATA_NEEDED: Qrr] |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Package | PG-TO252-3-11 (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | 1 (Unlimited) |
| RoHS Status | Compliant | Compliant |
| Technology Family | OptiMOS 30V | β |
| Configuration | Single | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 30V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID, TC=25C) | β | 50 A |
| Pulsed Drain Current (IDM, TC=25C, tp<=10us) | β | 200 A |
| Gate-Source Voltage (VGS) | β | +/-20 V |
| Gate Threshold Voltage (VGS(th), typ) | β | 1.7 V |
| On-State Resistance (RDS(on), VGS=10V) | β | 6.0 mOhm (typ) / 7.5 mOhm (max) |
| On-State Resistance (RDS(on), VGS=4.5V) | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Total Gate Charge (Qg, typ) | β | 21 nC |
| Output Charge (Qoss, typ) | β | [DATA_NEEDED: Qoss] |
| Power Dissipation (PD, TC=25C) | β | 56 W |
| Operating Junction Temperature | β | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC, max) | β | 2.5 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA, max, std PCB) | β | 62 C/W |
| Package / Case | β | PG-TO252-3 (DPAK) |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| Packing | β | Tape & Reel (T/R), 2500 per reel |
| AEC-Q101 / Automotive Grade | β | Not qualified |
| Technology / Generation | β | OptiMOS 30V, trench MOSFET |