IPD090N03LGATMA1 - 30V 40A OptiMOS N-Ch MOSFET | Infineon
MPN: IPD090N03LGATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.78 | $0.78 |
| 10 | $0.69 | $6.90 |
| 100 | $0.58 | $58.00 |
| 500 | $0.46 | $230.00 |
| 1,000 | $0.39 | $390.00 |
| 2,500 | $0.34 | $850.00 |
IPD090N03LGATMA1 Overview
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device used to switch or amplify electronic signals in power conversion applications. N-channel power MOSFETs like the IPD090N03LGATMA1 belong to the discrete semiconductor hierarchy: MOSFET -> FET -> transistor -> discrete semiconductor. The 30V OptiMOS family targets synchronous rectification, DC-DC conversion, and hot-swap circuits where switching loss, conduction loss, and thermal performance must be balanced.
The IPD090N03LGATMA1 features a logic-level gate threshold that allows direct drive from 4.5V to 10V logic, eliminating the need for gate-driver charge pumps in low-voltage applications. Its low Qgd / Qgs ratio supports fast switching transitions in the 100-500 kHz range typical of buck converters, and the 42W power rating gives substantial thermal headroom on a 1 square-inch copper pad. The 30V drain-source breakdown provides >25% margin over 19V input rails in 12V adapter-fed designs.
Typical applications include high-frequency synchronous buck converters in telecom and datacom equipment, hot-swap and OR-ing controllers in 12V server power distribution, USB-PD and battery protection circuits, and motor-drive low-side switches. The 40A continuous rating supports multi-amp point-of-load regulators on densely populated PCBs.
When designing with this MOSFET, derate drain current aggressively with rising ambient temperature using the manufacturer's SOA curves, and place the gate drive loop within 5mm of the gate pin to minimize ringing. The exposed pad (DPAK tab) must be soldered to a copper area of at least 30 mm^2 for thermal performance within datasheet limits.
This page synthesizes distributor pricing, pin-compatible OptiMOS-family drop-in alternatives, and practical PCB thermal notes not collated in the manufacturer datasheet.
Drop-in alternatives for IPD090N03LGATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD090N03LGATMA1 (same form factor and footprint) β differing in Package, Technology, MSL Level, Operating Temperature Range, RoHS Status.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPD09N03LAG
β Drop-Inπ Reference alternative (not in catalog)
IPD090N03LGATMA2
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IRL540NPBF
β Drop-Inβ In Stock
$0.86 / Unit
View Datasheet βIPD090N03LGATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Voltage (Vdss) | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | 40 A |
| Maximum Power Dissipation (Pd) @ Tc=25C | 42 W |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | 9 mOhm (typical) |
| Operating Temperature Range | -55C to +175C (junction) |
| Package | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (unlimited) |
| RoHS Status | Compliant |
| Technology Family | OptiMOS 30V |
| Configuration | Single |
IPD090N03LGATMA1 Pin Configuration
| Pin 1 | G β Gate - gate drive input (logic-level compatible) |
| Pin 2 | D β Drain - load current input (also connected to metal tab) |
| Pin 3 | S β Source - return path for load current and gate drive reference |
Safe Operating Area (DC)
Typical Applications
IPD090N03LGATMA1 is suitable for 6 applications: 12V Synchronous Buck Converter, Hot-Swap and OR-ing Controller, USB-PD and Battery Protection Switch, Brushless DC Motor Drive Low-Side Switch, Load Switch and Power Mux, Telecom and Datacom Point-of-Load.
12V Synchronous Buck Converter
The IPD090N03LGATMA1 fits the low-side synchronous rectifier position in 12V-input buck converters powering server and telecom point-of-load rails. Its 9 mOhm typical Rds(on) at 10V Vgs cuts conduction loss to approximately 1.8W at 20A load (versus 7W for a 44 mOhm part), and the low Qgd / Qgs ratio enables switching at 300-500 kHz with sub-30ns dead-time transitions. Compared with a Schottky diode replacement the Infineon part eliminates reverse-recovery loss entirely, raising efficiency by 3-5 percentage points at heavy load. Designers should pair this MOSFET with the IR3847 or TPS53515 controller for tight 12V-to-1V core conversion with sub-1mV ripple.
Recommended
Hot-Swap and OR-ing Controller
In 12V hot-swap and OR-ing circuits the IPD090N03LGATMA1 acts as the series-pass element that limits inrush current during board insertion and provides reverse-current blocking in redundant power feeds. Its 9 mOhm Rds(on) keeps forward voltage drop below 90mV at 10A, within tight OR-ing regulation budgets, and its 30V Vdss provides 2.5x margin over nominal 12V rails plus transient spikes. The logic-level gate threshold permits direct drive from standard hot-swap controllers like the LTC4217 without a gate-drive charge pump. Thermal calculations show that at continuous 10A load the DPAK dissipates roughly 0.9W, well within the 42W package limit on a 1 square-inch copper pad.
Recommended
USB-PD and Battery Protection Switch
The IPD090N03LGATMA1 serves as the low-side disconnect switch in USB-PD charger output paths and 1S/2S lithium battery protection circuits where its 30V Vdss comfortably exceeds the 20V USB-PD extended-power-range voltage. The 9 mOhm Rds(on) adds only about 0.27W loss at 5A charging current, keeping the charge path within thermal budget without heatsinking. The 40A continuous rating supports up to 100W USB-PD EPR operation when used as a reverse-blocking element. Compared to dedicated load switches the MOSFET-based design adds over-current protection via gate-drive sensing for short-circuit events in 5A USB-C cables.
Recommended
Brushless DC Motor Drive Low-Side Switch
In small BLDC motor drives for fans, pumps, and appliance motors below 5A continuous, the IPD090N03LGATMA1 provides a robust low-side switching element with reverse-battery protection when placed in the ground-return path. Its 30V Vdss handles 24V motor rails with margin, and the 40A continuous rating supports stall-current transients in sub-100W motors. The DPAK package offers better thermal coupling to PCB copper than smaller SOT-23 FETs, sustaining the high inrush during motor startup without thermal shutdown. Pair with the DRV8714SQRHARQ1 gate driver for full-bridge control of 12V/24V BLDC motors up to 10A continuous.
Recommended
Load Switch and Power Mux
The IPD090N03LGATMA1 functions as a high-current load switch in power-mux circuits that select between battery and adapter sources in 12V industrial equipment. Its logic-level gate threshold allows direct GPIO control from 3.3V or 5V microcontrollers without a driver stage, and its 9 mOhm Rds(on) holds the voltage drop to 90mV at 10A. The 30V Vdss tolerates inductive transients from downstream DC-DC converters without avalanche breakdown. For server and telecom equipment this part provides a reliable alternative to mechanical relays with sub-microsecond switching and zero contact bounce.
Recommended
Telecom and Datacom Point-of-Load
In telecom and datacom equipment the IPD090N03LGATMA1 supports 12V-to-1.xV POL converter designs where every milliohm of Rds(on) translates to measurable system efficiency gains. Its 9 mOhm typical at 10V Vgs, ultra-low gate charge, and 30V OptiMOS technology deliver benchmark figure-of-merit for the 300 kHz to 1 MHz switching frequency range. The DPAK package's thermal resistance of about 50 C/W on a 1 square-inch copper pad supports 20A continuous output with under 50C temperature rise. Designers typically pair this MOSFET with multi-phase controllers like the TPS53515RVER for 30-60A CPU core rails in server motherboards.
Recommended
Recommended Products Summary
Engineering reference data for IPD090N03LGATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD09N03LAG | IPD090N03LGATMA2 | IRL540NPBF |
|---|---|---|---|---|
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Vishay Intertechnology |
| Drain-Source Voltage (Vdss) | 30 V | 30 V | 30 V | 100 V |
| Continuous Drain Current (Id) | 40 A | 40 A | 40 A | 36 A |
| On-State Resistance (Rds(on)) | 9 mOhm @ 10V | 12 mOhm @ 10V | 9 mOhm @ 10V | 44 mOhm @ 10V |
| Maximum Power Dissipation | 42 W | 42 W | 42 W | 130 W |
| Gate Threshold Voltage | Logic-level | Logic-level | Logic-level | Standard |
| Technology Family | OptiMOS 30V | OptiMOS 30V (older) | OptiMOS 30V | HEXFET |
Key Differentiators
- Lower Rds(on) within same OptiMOS 30V DPAK family (vs IPD09N03LAG)
- 30V OptiMOS technology versus 100V over-specified part (vs IRL540NPBF)
- Logic-level gate drive compatibility (vs IRL540NPBF)
Design Notes
Estimated: at Vgs=10V and 20A continuous load, power dissipation is I^2 * R = 400 * 0.009 = 3.6W. With DPAK theta_JA of about 50 C/W on a 1 square-inch copper pad, junction temperature rises roughly 180C above ambient, exceeding the 175C maximum. Limit continuous current to 15A (about 2W dissipation, 100C rise) without additional copper area, or expand copper to 2-3 square inches to support 25A continuous load with safe thermal margin.
Solder the DPAK exposed metal tab to a copper pad of at least 30 mm^2 (roughly 6x5mm) and use at least 2 oz copper weight for thermal performance within datasheet limits. Place the gate drive loop within 5mm of the gate pin to minimize parasitic inductance and ringing. Use a Kelvin source connection (separate power and gate-drive source traces) when driving above 1 MHz to prevent gate-drive feedback that increases apparent Rds(on).
Do not exceed Vgs maximum of plus/minus 20V - even brief transients from a gate-driver supply overshoot can permanently damage the gate oxide. Add a 10k resistor from gate to source to prevent accidental turn-on during power-up. For high-side N-channel positions remember that the source voltage rises above ground when the FET turns on, requiring a gate voltage referenced to the source via a bootstrap or charge-pump circuit.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications consult Infineon automotive-grade OptiMOS portfolio.
