IPD090N03LGATMA1 vs IRL540NPBF Comparison
Detailed side-by-side comparison of IPD090N03LGATMA1 by Infineon and IRL540NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD090N03LGATMA1 | IRL540NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.34 | $0.86 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (Vdss) | 30 V | β |
| Continuous Drain Current (Id) @ Tc=25C | 40 A | β |
| Continuous Drain Current (Id) @ Tc=100C | [DATA_NEEDED: Id at 100C] | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Id] | β |
| Maximum Power Dissipation (Pd) @ Tc=25C | 42 W | β |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | 9 mOhm (typical) | β |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | 49.3 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | β |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Package | PG-TO252-3-11 (DPAK) | TO-220AB (through-hole) |
| Mounting Type | Surface Mount | Through Hole |
| MSL Level | 1 (unlimited) | β |
| RoHS Status | Compliant | Compliant |
| Technology Family | OptiMOS 30V | β |
| Configuration | Single | β |
| Manufacturer | β | Infineon (formerly International Rectifier) |
| Part Number | β | IRL540NPBF |
| Transistor Type | β | N-Channel MOSFET |
| Technology | β | HEXFET (Planar DMOS) |
| Drain-to-Source Voltage (VDS) | β | 100 V |
| Gate-to-Source Voltage (VGS) max | β | +/-16 V |
| Continuous Drain Current (ID) at Tc=25C | β | 36 A |
| Pulsed Drain Current (IDM) | β | 130 A (pulsed) |
| On-Resistance RDS(on) max | β | 44 mOhm at VGS=5V |
| Gate Threshold Voltage (VGS(th)) | β | 1 V to 2 V (logic level) |
| Power Dissipation (PD) at Tc=25C | β | 140 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Lead-Free | β | Yes (PBF suffix) |