IPD200N15N3GATMA1 vs IPD320N20N3GATMA1 Comparison

Detailed side-by-side comparison of IPD200N15N3GATMA1 by Infineon and IPD320N20N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD200N15N3GATMA1 IPD200N15N3GATMA1 - 150V 50A N-Ch OptiMOS 3 MOSFET | Infineon

IPD200N15N3GATMA1 - 150V 50A N-Ch OptiMOS 3 MOSFET | Infineon

IPD200N15N3GATMA1 βœ“ Active

Specification Comparison

Parameter IPD200N15N3GATMA1 IPD320N20N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.50 $1.34
Manufacturer Infineon Technologies β€”
Part Number IPD200N15N3GATMA1 β€”
Technology OptiMOS 3 (trench) OptiMOS 3
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 150 V 200 V
Continuous Drain Current (ID, TC=25C) 50 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance RDS(on) max @ VGS=10V 20 mOhm β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] β€”
Power Dissipation (PD, TC=25C) 150 W β€”
Operating Junction Temperature -55 C to +175 C β€”
Package PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) β€”
MSL Level 1 β€”
RoHS Status Compliant β€”
Lead-Free Yes β€”
FET Type β€” N-Channel
Continuous Drain Current (ID, Tc) β€” 34 A
Power Dissipation (PD, Tc) β€” 136 W
On-Resistance RDS(on) max β€” 32 mOhm at VGS = 10 V
Gate Charge x RDS(on) FOM β€” Excellent (per datasheet)
Operating Temperature Range β€” -55 C to +175 C (Tj)
Lead Plating β€” Pb-free
RoHS Compliance β€” Compliant
JEDEC Qualification β€” Qualified for target application
Channel Mode β€” Enhancement mode
Gate Threshold Level β€” Normal level (per datasheet title)

Datasheets & Resources

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