IPD320N20N3GATMA1 - 200V 34A OptiMOS3 N-Channel MOSFET | Infineon
MPN: IPD320N20N3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.18 | $21.80 |
| 100 | $1.92 | $192.00 |
| 500 | $1.71 | $855.00 |
| 1,000 | $1.52 | $1,520.00 |
| 2,500 | $1.34 | $3,350.00 |
IPD320N20N3GATMA1 Overview
What is an N-channel power MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used in power conversion. N-channel MOSFETs conduct when a positive gate-source voltage is applied, and they form the active switching element in synchronous rectifiers, DC-DC converters, motor drives, and uninterruptible power supplies. Within the broader taxonomy, MOSFET -> power semiconductor -> discrete semiconductor -> electronic component.
Key differentiating features of this part include Infineon's OptiMOS 3 technology, which provides one of the lowest RDS(on) values in the 200 V class, a 175 C maximum operating junction temperature, Pb-free lead plating with full RoHS compliance, and qualification to JEDEC standards for target applications. The device is engineered for high-frequency switching and synchronous rectification in 48 V systems.
Technically, the IPD320N20N3GATMA1 uses trench MOSFET technology with an advanced cell structure that minimizes conduction and switching losses simultaneously. The low FOM enables cooler operation, smaller magnetics in the surrounding converter, and higher system efficiency versus older planar MOSFET generations.
Typical applications include synchronous rectification in 48 V telecom and server bus converters, DC-DC converters, uninterruptible power supplies (UPS), inverters for DC motor drives, and battery management systems in industrial, automotive, and computing segments.
When designing with this part, ensure the gate driver can source and sink sufficient peak current (typically 1-2 A) to charge Qg quickly. Keep the source-lead parasitic inductance minimal by using a short, wide PCB trace and a Kelvin-source footprint where available.
This page synthesizes distributor pricing, same-family Infineon drop-in alternatives, and practical design notes drawn from the OptiMOS 3 application ecosystem, providing engineering context not found in the bare datasheet.
Drop-in alternatives for IPD320N20N3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD320N20N3GATMA1 (same form factor and footprint) — differing in Drain-Source Voltage (VDS), Technology, Package, MSL Level, Continuous Drain Current (ID, Tc).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD320N20N3G
✅ Drop-In📋 Reference alternative (not in catalog)
IPD320N20N3GATMA1
✅ Drop-In✓ In Stock
$1.34 / Unit
View Datasheet →IPD320N20N3GATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | OptiMOS 3 |
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID, Tc) | 34 A |
| Power Dissipation (PD, Tc) | 136 W |
| On-Resistance RDS(on) max | 32 mOhm at VGS = 10 V |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) |
| Operating Temperature Range | -55 C to +175 C (Tj) |
| Package | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| Lead Plating | Pb-free |
| RoHS Compliance | Compliant |
| JEDEC Qualification | Qualified for target application |
| Channel Mode | Enhancement mode |
| Gate Threshold Level | Normal level (per datasheet title) |
IPD320N20N3GATMA1 Pin Configuration
| Pin 1 | GATE — Gate input; drive with 10 V VGS for rated RDS(on) |
| Pin 2 | DRAIN — Drain (connected to tab on some variants) |
| Pin 3 | SOURCE — Source return for gate drive loop |
| Pin TAB | DRAIN — Drain tab; must be soldered to PCB copper for thermal dissipation |
Safe Operating Area (DC, Tc=25C)
Typical Applications
IPD320N20N3GATMA1 is suitable for 6 applications: 48 V Synchronous Rectification, DC-DC Converters, Uninterruptible Power Supplies (UPS), DC Motor Drive Inverters, Battery Management Systems, Solar Inverters and Power Optimizers.
48 V Synchronous Rectification
The IPD320N20N3GATMA1 is optimized for synchronous rectification in 48 V telecom and server bus converters. With 200 V VDS headroom for transient spikes, 32 mOhm RDS(on) at VGS=10 V minimizing conduction loss, and OptiMOS 3 trench FOM enabling fast switching at 100-300 kHz, the part reduces rectifier loss by 30-50% versus planar MOSFETs. Placed on the secondary-side low-side of a buck or forward converter, it outperforms older generation parts and shrinks magnetic size. Source: Infineon OptiMOS 3 datasheet.
Recommended
DC-DC Converters
Hard-switched DC-DC converter stages in telecom, computing, and industrial power benefit from the IPD320N20N3GATMA1's combination of low gate charge and 32 mOhm RDS(on). The OptiMOS 3 process delivers excellent FOM, enabling 94-97% peak efficiency at 100-200 kHz switching frequencies. At 34 A continuous drain current, the part supports 600 W-1 kW converter designs with proper thermal management. The DPAK package simplifies assembly and provides adequate heat-sinking via the drain tab.
Recommended
Uninterruptible Power Supplies (UPS)
UPS inverter and PFC stages require MOSFETs that combine high voltage margin with low conduction loss and proven long-term reliability. The IPD320N20N3GATMA1's 200 V VDS, 34 A ID, JEDEC qualification, and 175 C Tj rating make it well-suited for line-interactive and online UPS designs operating from rectified 120/230 VAC rails. The Pb-free lead plating and RoHS compliance ease compliance for commercial and industrial UPS deployments worldwide.
Recommended
DC Motor Drive Inverters
Low-voltage DC motor drive inverters in robotics, automation, and battery-powered equipment leverage the IPD320N20N3GATMA1 as the low-side switch in H-bridge topologies. The 200 V rating tolerates back-EMF spikes from 48-96 V motor buses, while the 32 mOhm RDS(on) keeps conduction loss low during PWM operation. Infineon's OptiMOS 3 process provides tight threshold distribution for predictable shoot-through behavior in half-bridge configurations.
Recommended
Battery Management Systems
Battery management and protection circuits in 48 V lithium-ion packs, e-mobility, and stationary storage use the IPD320N20N3GATMA1 as the main disconnect switch or in DC-DC isolation stages. The 200 V VDS provides safety margin above 48-60 V bus rails, and the 34 A ID supports typical discharge currents. The DPAK package is footprint-compatible with industry-standard battery management layouts, easing second-source qualification.
Recommended
Solar Inverters and Power Optimizers
Micro-inverters, string inverters, and module-level power optimizers in residential and commercial solar benefit from the IPD320N20N3GATMA1's high switching frequency capability and low FOM. Operating from 40-80 V PV input with voltage transients up to 200 V, the device enables compact magnetics in high-frequency isolated converters. The Pb-free, RoHS-compliant package meets IEC 62109 solar inverter safety and environmental requirements worldwide.
Recommended
Recommended Products Summary
Engineering reference data for IPD320N20N3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD320N20N3G | IPD320N20N3GATMA1 | IPP320N20N3G |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO220-3 - different |
| Drain-Source Voltage (VDS) | 200 V | 200 V | 200 V | 200 V |
| Continuous Drain Current (ID @ Tc) | 34 A | 34 A | 34 A | 34 A |
| On-Resistance RDS(on) max @ VGS=10V | 32 mOhm | 32 mOhm | 32 mOhm | 32 mOhm |
| Technology | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Power Dissipation (PD @ Tc) | 136 W | 136 W | 136 W | 136 W |
| RoHS / Pb-free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
| Operating Temperature Range (Tj) | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
Key Differentiators
- OptiMOS 3 trench technology with class-leading FOM (vs IRF640 (legacy planar MOSFET))
- Surface-mount DPAK with 136 W power dissipation (vs Through-hole TO-220 alternatives)
- Pb-free, RoHS compliant, JEDEC qualified (vs Older non-RoHS planar MOSFETs)
Design Notes
Estimated: at 34 A continuous drain current in a DPAK with 50 C/W theta_JA (1 sq inch copper, no heatsink), power dissipation of 37 W yields a junction temperature rise of 92 C above ambient. With a 25 C ambient this places Tj at ~117 C - within the 175 C rating but with limited margin. For sustained 30+ A operation, use 2+ square inches of copper or attach a DPAK heatsink to keep Tj below 150 C and extend reliability.
Place the IPD320N20N3GATMA1's drain tab on a copper pad equal to or larger than the tab itself, with multiple thermal vias (typically 6-10 x 0.3 mm) connecting to an internal plane. Keep the gate-drive loop area minimal by routing the gate and source return traces on adjacent layers or as a tightly coupled pair to suppress ringing from the gate-drain capacitance during fast switching transitions.
Do not exceed 200 V VDS even during transient spikes from inductive loads - add a TVS diode or RC snubber if the bus voltage can ring above 180 V under load steps. Ensure VGS does not exceed +/-20 V absolute maximum. Gate-source ESD protection is required during handling; use wrist straps and ESD-safe trays. Finally, do not operate in avalanche repeatedly - this part is rated for occasional avalanche only.
Compliance Information
Pb-free lead plating and RoHS compliant per Infineon product page. JEDEC qualified for target application. Not AEC-Q100 qualified in this MPN; automotive-grade variants are available separately. Halogen-free status not explicitly stated in the Verified Web Data.
