IPD30N06S2L13ATMA4 vs IPD30N08S2L21ATMA1 Comparison
Detailed side-by-side comparison of IPD30N06S2L13ATMA4 by Infineon and IPD30N08S2L21ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 β ActiveInfineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 β ActiveSpecification Comparison
| Parameter | IPD30N06S2L13ATMA4 | IPD30N08S2L21ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS | β |
| Channel Type | N-Channel | β |
| Mode | Enhancement | β |
| Drain-Source Voltage (Vds) | 55 V | β |
| Continuous Drain Current (Id) | 30 A (Tc) | β |
| Power Dissipation (Pd) | 136 W (Tc) | β |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK-2) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 Β°C to +175 Β°C (Tj) | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020, up to 260 Β°C peak reflow) | β |
| Lead-Free / RoHS | Yes (Green Package) | β |
| Avalanche Tested | 100 % production-tested | β |
| Technology | Planar (OptiMOS) | β |
| On-State Resistance (Rds(on)) | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] | β |
| Gate-Source Threshold (Vgs(th)) | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ at Vds=25V] | β |
| Diode Reverse Recovery (trr) | [DATA_NEEDED: trr typ] | β |
| Pin Count | 3 (Drain tab + Gate + Source) | 3 (Drain tab + Gate + Source) |
| Tape and Reel Packaging | Yes (T&R per IEC 60286-3) | β |
| Series | β | OptiMOS |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID) at Tc=25C | β | 30 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) at VGS=10 V | β | 26 milliohm (typ) |
| Gate Threshold Voltage (VGS(th)) | β | Logic-level (L series) |
| Gate Charge (Qg) typ | β | 56 nC |
| Power Dissipation (PD) at Tc=25C | β | 136 W |
| Operating Temperature Range | β | -55C to +175C |
| Maximum Junction Temperature | β | +175C |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 |