IPD30N08S2L21ATMA1 vs BSC076N06NS3GATMA1 Comparison

Detailed side-by-side comparison of IPD30N08S2L21ATMA1 by Infineon and BSC076N06NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD30N08S2L21ATMA1 IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon

IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon

IPD30N08S2L21ATMA1 βœ“ Active

Specification Comparison

Parameter IPD30N08S2L21ATMA1 BSC076N06NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.65
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 75 V 60 V
Continuous Drain Current (ID) at Tc=25C 30 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-State Resistance (RDS(on)) at VGS=10 V 26 milliohm (typ) β€”
Gate Threshold Voltage (VGS(th)) Logic-level (L series) 2.0 V to 3.5 V
Gate Charge (Qg) typ 56 nC β€”
Power Dissipation (PD) at Tc=25C 136 W β€”
Operating Temperature Range -55C to +175C -55C to +150C
Maximum Junction Temperature +175C β€”
Package PG-TO252-3-11 (DPAK-2) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Drain tab + Gate + Source) β€”
Automotive Qualification AEC-Q101 qualified β€”
RoHS Status Compliant β€”
MSL Level 1 1 (unlimited)
Product Family β€” OptiMOS 3
Technology β€” N-Channel Trench MOSFET
Continuous Drain Current (ID) at TC=25C β€” 50 A
On-Resistance RDS(on) max at VGS=10V β€” 7.6 mΞ©
On-Resistance RDS(on) max at VGS=4.5V β€” 10.4 mΞ©
Gate-Source Voltage (VGS) max β€” Β±20 V
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg value]
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 69 W
RoHS Compliance β€” Compliant
Halogen-Free β€” Yes (per Infineon product page)

Datasheets & Resources

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