IPD30N08S2L21ATMA1 vs BSZ130N03LSGATMA1 Comparison
Detailed side-by-side comparison of IPD30N08S2L21ATMA1 by Infineon and BSZ130N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 β ActiveInfineon
BSZ130N03LSGATMA1 - 30V OptiMOS N-FET, 35A, PG-TSDSON-8 | Infineon
BSZ130N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | IPD30N08S2L21ATMA1 | BSZ130N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 75 V | β |
| Continuous Drain Current (ID) at Tc=25C | 30 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-State Resistance (RDS(on)) at VGS=10 V | 26 milliohm (typ) | β |
| Gate Threshold Voltage (VGS(th)) | Logic-level (L series) | β |
| Gate Charge (Qg) typ | 56 nC | β |
| Power Dissipation (PD) at Tc=25C | 136 W | β |
| Operating Temperature Range | -55C to +175C | -55 C to +150 C (junction) |
| Maximum Junction Temperature | +175C | β |
| Package | PG-TO252-3-11 (DPAK-2) | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Drain tab + Gate + Source) | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Part Family | β | OptiMOS 25V / 30V |
| Polarity / Channel Type | β | N-Channel Enhancement Mode |
| Drain-Source Voltage (Vds) | β | 30 V |
| Continuous Drain Current (Ta=25 C) | β | 10 A |
| Continuous Drain Current (Tc=25 C) | β | 35 A |
| On-State Resistance Rds(on) max @ Vgs=10V | β | 13 mOhm |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | β | 2.2 V |
| Power Dissipation (Ta) | β | 2.1 W |
| Power Dissipation (Tc) | β | 25 W |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| Qualification | β | Industrial / Commercial (non-automotive) |