IPD30N08S2L21ATMA1 vs IPD30N10S3L34ATMA1 Comparison
Detailed side-by-side comparison of IPD30N08S2L21ATMA1 by Infineon and IPD30N10S3L34ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 β ActiveInfineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 β ActiveSpecification Comparison
| Parameter | IPD30N08S2L21ATMA1 | IPD30N10S3L34ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | β |
| Transistor Type | N-Channel MOSFET | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | 75 V | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 30 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 180 A |
| On-State Resistance (RDS(on)) at VGS=10 V | 26 milliohm (typ) | β |
| Gate Threshold Voltage (VGS(th)) | Logic-level (L series) | β |
| Gate Charge (Qg) typ | 56 nC | β |
| Power Dissipation (PD) at Tc=25C | 136 W | β |
| Operating Temperature Range | -55C to +175C | β |
| Maximum Junction Temperature | +175C | β |
| Package | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK-2 / SC-63) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Drain tab + Gate + Source) | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Status | Compliant | β |
| MSL Level | 1 | 1 (JEDEC J-STD-020, 260Β°C peak reflow) |
| Product Family | β | OptiMOS-T2 |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 30 A |
| Power Dissipation (PD, Tc=25Β°C) | β | 57 W |
| Drain-Source On-Resistance (RDS(on) max) | β | 31 mΞ© @ VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | β | 1.7 V (range 1.0 V to 2.5 V) |
| Total Gate Charge (Qg typ) | β | 23 nC |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| RoHS / REACH | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| Avalanche Rated | β | 100% Avalanche tested |