IPD30N10S3L34ATMA1 vs IPD30N08S2L21ATMA1 Comparison
Detailed side-by-side comparison of IPD30N10S3L34ATMA1 by Infineon and IPD30N08S2L21ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 β ActiveInfineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 β ActiveSpecification Comparison
| Parameter | IPD30N10S3L34ATMA1 | IPD30N08S2L21ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | β |
| Transistor Type | N-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 75 V |
| Continuous Drain Current (ID, Tc=25Β°C) | 30 A | β |
| Pulsed Drain Current (IDM) | 180 A | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc=25Β°C) | 57 W | β |
| Drain-Source On-Resistance (RDS(on) max) | 31 mΞ© @ VGS=10 V | β |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1.7 V (range 1.0 V to 2.5 V) | β |
| Total Gate Charge (Qg typ) | 23 nC | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TO252-3-11 (DPAK-2 / SC-63) | PG-TO252-3-11 (DPAK-2) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| MSL Level | 1 (JEDEC J-STD-020, 260Β°C peak reflow) | 1 |
| RoHS / REACH | Compliant | β |
| Lead-Free / Halogen-Free | Yes / Yes | β |
| Avalanche Rated | 100% Avalanche tested | β |
| Series | β | OptiMOS |
| Continuous Drain Current (ID) at Tc=25C | β | 30 A |
| On-State Resistance (RDS(on)) at VGS=10 V | β | 26 milliohm (typ) |
| Gate Threshold Voltage (VGS(th)) | β | Logic-level (L series) |
| Gate Charge (Qg) typ | β | 56 nC |
| Power Dissipation (PD) at Tc=25C | β | 136 W |
| Operating Temperature Range | β | -55C to +175C |
| Maximum Junction Temperature | β | +175C |
| Pin Count | β | 3 (Drain tab + Gate + Source) |
| RoHS Status | β | Compliant |