IPD30N10S3L34ATMA1 vs IPD35N10S3L26ATMA1 Comparison
Detailed side-by-side comparison of IPD30N10S3L34ATMA1 by Infineon and IPD35N10S3L26ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 β ActiveInfineon
IPD35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPD35N10S3L26ATMA1 β ActiveSpecification Comparison
| Parameter | IPD30N10S3L34ATMA1 | IPD35N10S3L26ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | β |
| Transistor Type | N-Channel Enhancement Mode MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc=25Β°C) | 30 A | β |
| Pulsed Drain Current (IDM) | 180 A | 180 A |
| Power Dissipation (PD, Tc=25Β°C) | 57 W | β |
| Drain-Source On-Resistance (RDS(on) max) | 31 mΞ© @ VGS=10 V | β |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1.7 V (range 1.0 V to 2.5 V) | β |
| Total Gate Charge (Qg typ) | 23 nC | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55Β°C to +175Β°C |
| Package | PG-TO252-3-11 (DPAK-2 / SC-63) | PG-TO252-3-11 (DPAK-2) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| MSL Level | 1 (JEDEC J-STD-020, 260Β°C peak reflow) | MSL1 (up to 260Β°C peak reflow) |
| RoHS / REACH | Compliant | β |
| Lead-Free / Halogen-Free | Yes / Yes | β |
| Avalanche Rated | 100% Avalanche tested | β |
| Part Number | β | IPD35N10S3L26ATMA1 |
| Technology | β | OptiMOS-T (N-channel enhancement mode trench MOSFET) |
| Continuous Drain Current (ID) at TC=25Β°C | β | 35 A |
| On-Resistance RDS(on) max at VGS=10 V | β | 26 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | β | 1.7 V |
| Continuous Power Dissipation (PD) at TC=25Β°C | β | 71 W |
| Avalanche Tested | β | 100% avalanche tested |
| RoHS / Halogen-Free | β | RoHS compliant, Green product (halogen-free) |
| Typical Gate Charge (Qg) | β | [DATA_NEEDED: typical Qg from datasheet] |