IPD35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
MPN: IPD35N10S3L26ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.92 | $920.00 |
| 2,500 | $0.81 | $2,025.00 |
IPD35N10S3L26ATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically an oxide layer) to modulate conduction between source and drain terminals. The MOSFET family sits inside the broader hierarchy of discrete semiconductors (transistors), which belong to the active-device branch of power electronics. N-channel enhancement-mode MOSFETs like the IPD35N10S3L26ATMA1 require a positive gate-source voltage to turn on, and are the dominant low-voltage switch topology for synchronous rectification, motor drive, and DC-DC conversion due to lower RDS(on) per die area than P-channel equivalents.
Key features of the IPD35N10S3L26ATMA1 include a 100 V drain-source breakdown voltage (V(BR)DSS), 35 A continuous ID at TC=25°C, 180 A pulsed avalanche current rating, 71 W continuous power dissipation at TC=25°C, 175°C maximum operating junction temperature, MSL1 moisture sensitivity rating (260°C peak reflow compatible), and an intrinsically low gate charge for reduced driver losses. The device is fully RoHS compliant and built on a green (halogen-free) Infineon production line.
OptiMOS-T is Infineon's trench-technology MOSFET platform optimized for low-voltage, high-current applications. The trench gate geometry reduces cell pitch and on-resistance per unit silicon area while improving switching performance. Compared to planar MOSFETs of equivalent rating, OptiMOS-T parts typically exhibit 30-50% lower RDS(on), faster switching transitions, and better thermal behavior under repetitive avalanche stress.
Typical applications include 48 V automotive DC-DC converters (e.g., mild-hybrid 48V mild-hybrid systems), electric power steering (EPS), braking systems, body and chassis ECUs, motor drive H-bridges, solenoid drivers, and high-current synchronous rectification in industrial SMPS. The 100 V rating provides ample margin for 48 V bus transients up to ~70 V spikes.
Design consideration: the PG-TO252-3-11 (DPAK) thermal pad must be soldered to a copper pour of at least 1 square inch to keep RDS(on) rise under load manageable. For high-cycle avalanche applications, derate to 80% of ID_max and verify Tj under worst-case cooling.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IPD35N10S3L26ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD35N10S3L26ATMA1 (same form factor and footprint) — differing in Technology, Package, MSL Level, Automotive Qualification, Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD30N10S3L34ATMA1
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View Datasheet →IPD30N10S3L34ATMA2
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View Datasheet →IPD30N08S2L21ATMA1
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View Datasheet →IPD30N06S2L13ATMA4
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View Datasheet →BSC050N03LSGATMA1
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View Datasheet →IPD35N10S3L26ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPD35N10S3L26ATMA1 |
| Technology | OptiMOS-T (N-channel enhancement mode trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25°C | 35 A |
| Pulsed Drain Current (IDM) | 180 A |
| On-Resistance RDS(on) max at VGS=10 V | 26 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | 1.7 V |
| Continuous Power Dissipation (PD) at TC=25°C | 71 W |
| Operating Junction Temperature | -55°C to +175°C |
| Package | PG-TO252-3-11 (DPAK-2) |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 (up to 260°C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified |
| Avalanche Tested | 100% avalanche tested |
| RoHS / Halogen-Free | RoHS compliant, Green product (halogen-free) |
IPD35N10S3L26ATMA1 Pin Configuration
| Pin 1 | Gate (G) — Gate drive input; controls drain-source conduction. Standard logic-level or 10V VGS drive. |
| Pin 2 | Drain (D) — Drain terminal; internally connected to the metal tab on the backside of the package. |
| Pin 3 | Source (S) — Source terminal; reference for gate drive and main current return path. |
Safe Operating Area (DC)
Typical Applications
IPD35N10S3L26ATMA1 is suitable for 6 applications: 48V Mild-Hybrid DC-DC Converter, Electric Power Steering (EPS) Motor Drive, Automotive Braking System (ABS/ESC) Solenoid Driver, Industrial Synchronous Rectification (24-48V SMPS), Battery Management System (BMS) Protection Switch, Motor Control H-Bridge (Industrial/Automotive Auxiliary).
48V Mild-Hybrid DC-DC Converter
The IPD35N10S3L26ATMA1 is well-suited for the synchronous rectifier position in 48V-to-12V or 48V-to-24V automotive DC-DC converters used in mild-hybrid electric vehicles. Its 100 V VDS rating provides safe headroom above the 48 V nominal bus (with transient peaks to ~70 V), while the 26 mΩ max RDS(on) at VGS=10 V keeps full-load conduction losses under 30 W at 35 A, manageable without aggressive thermal management. The 180 A pulsed avalanche rating also gives robust tolerance to the inductive kick during switch-node voltage transients. Pair with an Infineon EiceDRIVER gate driver and place the DPAK tab on a 1-square-inch copper pour for typical 50-100 W converter designs.
Recommended
Electric Power Steering (EPS) Motor Drive
In EPS systems the IPD35N10S3L26ATMA1 serves as the low-side switch in the H-bridge driving the steering assist motor. With 35 A continuous drain current and 180 A pulsed avalanche capability, the MOSFET handles the high inrush currents typical when the steering rack transitions from static friction. The AEC-Q101 qualification ensures reliability under hood thermal stress (-40°C to +175°C), and the 100% avalanche-tested rating supports the repetitive freewheeling events during PWM commutation. Low Qg reduces driver-stage losses, allowing smaller gate drivers and lower standby power. The PG-TO252-3-11 footprint is compatible with most automotive ECU PCB reference designs.
Recommended
Automotive Braking System (ABS/ESC) Solenoid Driver
The IPD35N10S3L26ATMA1 is qualified for ABS and electronic stability control (ESC) solenoid valve drivers where 100% avalanche-tested ruggedness is essential. Each ABS cycle forces the MOSFET to absorb the solenoid's inductive kickback energy; the device's 175°C maximum junction temperature and 180 A pulsed avalanche current rating make it tolerant of these repetitive events. The 26 mΩ RDS(on) limits steady-state heating of the brake-hydraulic module, while MSL1 reflow compatibility supports standard lead-free automotive PCB assembly. The DPAK-2 footprint allows direct PCB reuse across vehicle platforms.
Recommended
Industrial Synchronous Rectification (24-48V SMPS)
For industrial 24 V or 48 V switched-mode power supplies operating as secondary-side synchronous rectifiers, the IPD35N10S3L26ATMA1 provides a cost-effective solution with 100 V VDS margin and 26 mΩ RDS(on). The OptiMOS-T trench process delivers faster body-diode reverse recovery than planar MOSFETs, reducing dead-time losses in LLC and forward converters. At 100 kHz switching frequency, total losses are typically 60% lower than equivalent planar MOSFETs, enabling fanless designs up to ~300 W output. AEC-Q101 over-qualification also satisfies industrial reliability requirements.
Recommended
Battery Management System (BMS) Protection Switch
In 48 V lithium-ion battery management systems, the IPD35N10S3L26ATMA1 functions as the high-current pack protection disconnect switch. Its 100 V VDS comfortably handles the 48 V stack voltage plus transient overshoot during contactor opening, while the 35 A continuous current rating supports pack discharge currents in mild-hybrid applications. The 100% avalanche rating and 175°C junction temperature give long-term reliability under repeated short-circuit test conditions per ISO 26262 functional-safety requirements. The low 1.7 V VGS(th) simplifies low-side drive from BMS ASICs.
Recommended
Motor Control H-Bridge (Industrial/Automotive Auxiliary)
The IPD35N10S3L26ATMA1 is widely used as the low-side switch in H-bridge motor drives for auxiliary automotive loads (HVAC blower, water pump, oil pump) and industrial DC brushless motor drives. Its 26 mΩ RDS(on) and 35 A continuous ID handle motor inrush currents up to 180 A pulsed without derating, while the OptiMOS-T process provides fast switching for PWM frequencies up to 100 kHz. The DPAK-2 footprint allows direct PCB compatibility with virtually all major MOSFET vendors, simplifying second-source qualification. The 100 V VDS provides margin for 48 V bus applications with inductive kickback clamping by the MOSFET's avalanche rating.
Recommended
Recommended Products Summary
Engineering reference data for IPD35N10S3L26ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD30N10S3L34ATMA1 | IPD30N10S3L34ATMA2 | IPD30N08S2L21ATMA1 | IPD30N06S2L13ATMA4 | BSC050N03LSGATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TDSON-8 (different) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 80 V | 60 V | 30 V |
| Continuous Drain Current (ID @ TC=25°C) | 35 A | 30 A | 30 A | 30 A | 30 A | 50 A |
| On-Resistance RDS(on) max @ VGS=10V | 26 mΩ | 34 mΩ | 34 mΩ | 21 mΩ | 13 mΩ | 5 mΩ |
| Technology Family | OptiMOS-T | OptiMOS-T | OptiMOS-T | OptiMOS-2 | OptiMOS-2 | OptiMOS-3 |
| Automotive Qualification (AEC-Q101) | Qualified | Qualified | Qualified | Qualified | Qualified | Qualified |
| Operating Junction Temperature | 175°C max | 175°C max | 175°C max | 175°C max | 175°C max | 150°C max |
| Continuous Power Dissipation (TC=25°C) | 71 W | 71 W | 71 W | 71 W | 71 W | 57 W |
Key Differentiators
- Highest continuous current in OptiMOS-T 100V DPAK family (vs IPD30N10S3L34ATMA1)
- OptiMOS-T trench technology vs older planar processes (vs Generic 100V planar N-MOSFET)
- AEC-Q101 + 100% avalanche + 175°C Tj (vs Industrial-grade 100V MOSFETs)
Design Notes
Estimated: at 25 A continuous load and 100% duty, conduction loss is I² × RDS(on) = 25² × 0.026 = 16.25 W. The PG-TO252-3-11 (DPAK) thermal resistance on a 1-square-inch 2-oz copper pour is typically θJA ≈ 50°C/W, giving a junction temperature rise of ~813°C above ambient - clearly exceeding safe limits. For continuous operation at 25 A, expand the copper pour to 4+ square inches, or use a small clip-on heatsink. Always verify SOA on the datasheet's thermal-impedance curve rather than relying solely on the DC rating.
The PG-TO252-3-11 exposed tab is the drain terminal and must be soldered to a top-side copper pour with multiple thermal vias (typically 4-9 vias in a 3x3 grid, 0.3mm drill, 1mm pitch) to inner-plane copper for double-sided heat extraction. Place the gate-drive return (Kelvin source) directly at pin 3 with a short, low-inductance trace to the driver IC ground. Avoid running high-current drain traces under the gate loop to minimize dv/dt-induced gate-drive ringing. Keep the gate-trace impedance below ~5 nH for clean switching at 100 kHz.
Three common pitfalls when designing with the IPD35N10S3L26ATMA1: (1) Driving the gate from a logic-level 3.3V source instead of 10V VGS - this nearly doubles RDS(on) and dramatically increases losses. Always use a dedicated gate driver with 10V drive. (2) Ignoring avalanche energy during inductive load switching - although the part is 100% avalanche tested, repetitive avalanche operation above the SOA curve derates long-term reliability. (3) Exceeding MSL1 floor-life - although the part is MSL1 (unlimited floor life at ≤30°C/85%RH), verify JEDEC J-STD-033 handling if the part is ever rerolled or transferred.
Switch-node dv/dt on the IPD35N10S3L26ATMA1 can exceed 5 kV/μs in hard-switched topologies, which may couple back through the gate-drain capacitance (Cgd, typically a few hundred pF) and cause parasitic turn-on of the complementary high-side device in a half-bridge. Add a 10 kΩ gate-source resistor on the off-state device and consider a small ferrite bead or 1-2 Ω gate-damping resistor to suppress ringing. The Infineon application note 'OptiMOS-T Half-Bridge Layout' (if available) provides reference PCB layouts and gate-drive damping networks.
Compliance Information
AEC-Q101 (automotive) qualified per Infineon datasheet. RoHS compliant, Green product (halogen-free) per Infineon product page. MSL1 rated for up to 260°C peak reflow soldering.
