IPD320N20N3GATMA1 vs IAUC100N10S5N040ATMA1 Comparison

Detailed side-by-side comparison of IPD320N20N3GATMA1 by Infineon and IAUC100N10S5N040ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC100N10S5N040ATMA1

IAUC100N10S5N040ATMA1 - 100V 4mΞ© 100A OptiMOS-5 N-MOSFET | Infineon

IAUC100N10S5N040ATMA1 βœ“ Active

Specification Comparison

Parameter IPD320N20N3GATMA1 IAUC100N10S5N040ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.34 $1.62
FET Type N-Channel N-Channel, Enhancement Mode
Technology OptiMOS 3 OptiMOS-5
Drain-Source Voltage (VDS) 200 V 100 V
Continuous Drain Current (ID, Tc) 34 A β€”
Power Dissipation (PD, Tc) 136 W β€”
On-Resistance RDS(on) max 32 mOhm at VGS = 10 V β€”
Gate Charge x RDS(on) FOM Excellent (per datasheet) β€”
Operating Temperature Range -55 C to +175 C (Tj) -55C to +175C (junction)
Package PG-TO252-3 (DPAK) PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount
Mounting Type Surface Mount Surface Mount
Lead Plating Pb-free β€”
RoHS Compliance Compliant β€”
JEDEC Qualification Qualified for target application β€”
Channel Mode Enhancement mode β€”
Gate Threshold Level Normal level (per datasheet title) β€”
Continuous Drain Current (ID) @ TC=25C β€” 100 A (package-limited)
Pulsed Drain Current (IDM) β€” 400 A
RDS(on) max @ VGS=10V β€” 4 mΞ©
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg value]
Maximum Power Dissipation (PD) β€” 167 W @ TC=25C
Thermal Resistance, Junction-to-Case (RthJC) β€” 0.9 K/W
MSL Level β€” MSL1 (up to 260C peak reflow)
Automotive Qualification β€” AEC-Q100 qualified
Avalanche Rating β€” 100% Avalanche tested
AOI Compatibility β€” Feasible for Automatic Optical Inspection
RoHS Status β€” Compliant

Datasheets & Resources

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