IPD320N20N3GATMA1 vs IPD200N15N3GATMA1 Comparison

Detailed side-by-side comparison of IPD320N20N3GATMA1 by Infineon and IPD200N15N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD200N15N3GATMA1 IPD200N15N3GATMA1 - 150V 50A N-Ch OptiMOS 3 MOSFET | Infineon

IPD200N15N3GATMA1 - 150V 50A N-Ch OptiMOS 3 MOSFET | Infineon

IPD200N15N3GATMA1 βœ“ Active

Specification Comparison

Parameter IPD320N20N3GATMA1 IPD200N15N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.34 $1.50
FET Type N-Channel β€”
Technology OptiMOS 3 OptiMOS 3 (trench)
Drain-Source Voltage (VDS) 200 V 150 V
Continuous Drain Current (ID, Tc) 34 A β€”
Power Dissipation (PD, Tc) 136 W β€”
On-Resistance RDS(on) max 32 mOhm at VGS = 10 V β€”
Gate Charge x RDS(on) FOM Excellent (per datasheet) β€”
Operating Temperature Range -55 C to +175 C (Tj) β€”
Package PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Lead Plating Pb-free β€”
RoHS Compliance Compliant β€”
JEDEC Qualification Qualified for target application β€”
Channel Mode Enhancement mode β€”
Gate Threshold Level Normal level (per datasheet title) β€”
Manufacturer β€” Infineon Technologies
Part Number β€” IPD200N15N3GATMA1
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID, TC=25C) β€” 50 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V β€” 20 mOhm
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]
Power Dissipation (PD, TC=25C) β€” 150 W
Operating Junction Temperature β€” -55 C to +175 C
Pin Count β€” 3 (Gate, Drain, Source)
MSL Level β€” 1
RoHS Status β€” Compliant
Lead-Free β€” Yes

Datasheets & Resources

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