IPD33CN10NGATMA1 vs ISC080N10NM6ATMA1 Comparison
Detailed side-by-side comparison of IPD33CN10NGATMA1 by Infineon and ISC080N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD33CN10NGATMA1 - 100V N-Ch OptiMOS MOSFET | Infineon | PG-TO252
IPD33CN10NGATMA1 β ActiveInfineon
ISC080N10NM6ATMA1 - 100V OptiMOS 6 N-Channel MOSFET | Infineon
ISC080N10NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IPD33CN10NGATMA1 | ISC080N10NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $1.05 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tc) | 27 A | β |
| Power Dissipation (PD, Tc) | 58 W | β |
| Technology | OptiMOS (Trench) | β |
| Package | PG-TO252-3 (DPAK), Surface Mount | PG-TDSON-8 FL (TDSON EP) |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (TJ) | -55Β°C to +175Β°C (TJ max, per datasheet) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 3.3 V at 36 Β΅A |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL Level | 1 | 1 (per JEDEC J-STD-020, per datasheet) |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOSβ’ 6 100V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 100 V |
| Continuous Drain Current (ID) at Ta | β | 13 A |
| Continuous Drain Current (ID) at Tc | β | 75 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 100 W |
| On-Resistance RDS(on) Typ @ VGS=10V, ID=20A | β | 8.05 mΞ© |
| Halogen-Free | β | Yes |
| Qualification | β | Industrial grade (per Infineon OptiMOS 6 100V family) |