IPD35N10S3L26ATMA1 vs BSC050N03LSGATMA1 Comparison
Detailed side-by-side comparison of IPD35N10S3L26ATMA1 by Infineon and BSC050N03LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPD35N10S3L26ATMA1 β ActiveInfineon
BSC050N03LSGATMA1
BSC050N03LSGATMA1 - 30V 80A 5mOhm OptiMOS 3 N-FET | Infineon
BSC050N03LSGATMA1 β ActiveSpecification Comparison
| Parameter | IPD35N10S3L26ATMA1 | BSC050N03LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD35N10S3L26ATMA1 | BSC050N03LSGATMA1 |
| Technology | OptiMOS-T (N-channel enhancement mode trench MOSFET) | OptiMOS 3 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 35 A | β |
| Pulsed Drain Current (IDM) | 180 A | β |
| On-Resistance RDS(on) max at VGS=10 V | 26 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | 1.7 V | β |
| Continuous Power Dissipation (PD) at TC=25Β°C | 71 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Package | PG-TO252-3-11 (DPAK-2) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260Β°C peak reflow) | 1 |
| Automotive Qualification | AEC-Q101 qualified | β |
| Avalanche Tested | 100% avalanche tested | β |
| RoHS / Halogen-Free | RoHS compliant, Green product (halogen-free) | β |
| Typical Gate Charge (Qg) | [DATA_NEEDED: typical Qg from datasheet] | β |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at Tc | β | 80 A |
| Continuous Drain Current (ID) at Ta | β | 18 A |
| On-State Resistance (RDS(on)) Max at VGS=10V | β | 5 mOhm |
| Power Dissipation (PD) at Tc | β | 50 W |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Operating Temperature Range | β | -55 C to +150 C |
| Channel Type | β | N-Channel |
| RoHS Status | β | Compliant |