IPD35N10S3L26ATMA1 vs IPD30N10S3L34ATMA1 Comparison
Detailed side-by-side comparison of IPD35N10S3L26ATMA1 by Infineon and IPD30N10S3L34ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPD35N10S3L26ATMA1 β ActiveInfineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 β ActiveSpecification Comparison
| Parameter | IPD35N10S3L26ATMA1 | IPD30N10S3L34ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.81 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD35N10S3L26ATMA1 | β |
| Technology | OptiMOS-T (N-channel enhancement mode trench MOSFET) | β |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25Β°C | 35 A | β |
| Pulsed Drain Current (IDM) | 180 A | 180 A |
| On-Resistance RDS(on) max at VGS=10 V | 26 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | 1.7 V | β |
| Continuous Power Dissipation (PD) at TC=25Β°C | 71 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | -55Β°C to +175Β°C |
| Package | PG-TO252-3-11 (DPAK-2) | PG-TO252-3-11 (DPAK-2 / SC-63) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260Β°C peak reflow) | 1 (JEDEC J-STD-020, 260Β°C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Avalanche Tested | 100% avalanche tested | β |
| RoHS / Halogen-Free | RoHS compliant, Green product (halogen-free) | β |
| Typical Gate Charge (Qg) | [DATA_NEEDED: typical Qg from datasheet] | β |
| Product Family | β | OptiMOS-T2 |
| Transistor Type | β | N-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 30 A |
| Power Dissipation (PD, Tc=25Β°C) | β | 57 W |
| Drain-Source On-Resistance (RDS(on) max) | β | 31 mΞ© @ VGS=10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | β | 1.7 V (range 1.0 V to 2.5 V) |
| Total Gate Charge (Qg typ) | β | 23 nC |
| RoHS / REACH | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| Avalanche Rated | β | 100% Avalanche tested |