IPD50P04P413ATMA2 vs IPD90P04P4L04ATMA2 Comparison
Detailed side-by-side comparison of IPD50P04P413ATMA2 by Infineon and IPD90P04P4L04ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD90P04P4L04ATMA2 - -40V P-Ch 90A 4.3mOhm OptiMOS | Infineon
IPD90P04P4L04ATMA2 β ActiveSpecification Comparison
| Parameter | IPD50P04P413ATMA2 | IPD90P04P4L04ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $1.22 |
| Polarity / Device Type | P-Channel MOSFET | β |
| Technology | OptiMOS-P2 (Trench) | β |
| Drain-Source Voltage (VDS) | -40 V | β |
| Continuous Drain Current (TC=25Β°C, ID) | 50 A | β |
| Continuous Drain Current (TC=100Β°C, ID) | [DATA_NEEDED: ID @ 100Β°C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | β |
| Power Dissipation (TC=25Β°C, Ptot) | 58 W | β |
| On-State Resistance (RDS(on)) @ VGS=-10V | 9.2 mΞ© (typ) / 12.6 mΞ© (max) | β |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Maximum Junction Temperature (TJ,max) | 175 Β°C | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55 C to +175 C |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Standard Pack Quantity (13" reel) | 2500 pcs | β |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Status | Compliant | Compliant |
| Part Number | β | IPD90P04P4L04ATMA2 |
| Manufacturer | β | Infineon Technologies |
| Family | β | OptiMOS-P2 |
| Channel Type | β | P-Channel |
| Drain-Source Voltage (Vds) | β | -40 V |
| Continuous Drain Current (Id) at Tc=25C | β | -90 A |
| Power Dissipation (Pd) at Tc=25C | β | 125 W |
| On-State Resistance Rds(on) typ at Vgs=-10V | β | 4.3 mOhm |
| Gate Threshold Voltage Vgs(th) typ | β | [DATA_NEEDED: Vgs(th) typical value] |
| Maximum Junction Temperature | β | 175 C |
| Number of Pins | β | 3 (2 + Tab) |