IPD90P04P4L04ATMA2 - -40V P-Ch 90A 4.3mOhm OptiMOS | Infineon
MPN: IPD90P04P4L04ATMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.45 | $2.45 |
| 10 | $2.15 | $21.50 |
| 100 | $1.78 | $178.00 |
| 500 | $1.49 | $745.00 |
| 1,000 | $1.22 | $1,220.00 |
IPD90P04P4L04ATMA2 Overview
A P-channel MOSFET is a type of field-effect transistor in which the body and source/drain regions are arranged so that, when the gate is pulled below the source potential, a P-type conduction channel forms between source and drain. P-channel devices are commonly used as high-side switches because they can be turned on by a gate voltage that is referenced to ground (rather than to the load), simplifying gate drive circuitry in 12 V automotive and industrial systems. The OptiMOS-P2 family specifically targets ultra-low Rds(on) per package millimeter-squared.
Key specifications include a -40 V Vds rating (with avalanche ruggedness), -90 A continuous drain current at 25 C case temperature, 4.3 mOhm typical Rds(on) at Vgs = -10 V, a typical gate threshold of -2 V, and a maximum junction temperature of 175 C. The PG-TO252-3-313 package provides a low thermal resistance path (~0.6 C/W junction-to-case) that supports the 125 W power dissipation rating when mounted on a sufficient copper area.
The OptiMOS-P2 trench cell architecture minimizes both conduction and switching losses while maintaining strong avalanche capability. Compared to older P-channel generations, this part delivers roughly a 35-50% lower Rds(on) at the same die size, which translates directly into lower I²R losses in high-current 12 V/24 V automotive load paths.
Typical applications include automotive high-side switching for ECUs, body-control modules, LED lighting drivers, reverse-polarity protection, battery isolation switches, and 12 V/24 V industrial load management. The -40 V Vds rating also covers 24 V industrial bus transient spikes up to ~36 V.
When designing with this part, ensure the gate is pulled cleanly below the source by at least 10 V for full enhancement, and keep the gate-source loop physically short to avoid parasitic turn-on from drain voltage transients (the classic 'dv/dt induced turn-on' pitfall of high-side P-channel switches).
This page synthesizes distributor pricing, parametric drop-in alternatives, and practical high-side-switching design guidance not consolidated on any single manufacturer or distributor page.
Drop-in alternatives for IPD90P04P4L04ATMA2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD90P04P4L04ATMA2 (same form factor and footprint) — differing in Package, Technology, Drain-Source Voltage (VDS), Operating Junction Temperature, Pin Count.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD90P04P405ATMA2
✅ Drop-In✓ In Stock
$0.69 / Unit
View Datasheet →IPB120P04P4L03ATMA2
✅ Drop-In✓ In Stock
$1.74 / Unit
View Datasheet →IPD50P04P413ATMA2
✅ Drop-In✓ In Stock
$0.42 / Unit
View Datasheet →IPD35N10S3L26ATMA2
✅ Drop-In✓ In Stock
$1.05 / Unit
View Datasheet →IPD30N10S3L34ATMA2
✅ Drop-In✓ In Stock
$0.92 / Unit
View Datasheet →IPD30N06S2L13ATMA4
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →IPD90P04P4L04ATMA2 Maximum Ratings & Electrical Characteristics
| Part Number | IPD90P04P4L04ATMA2 |
| Manufacturer | Infineon Technologies |
| Family | OptiMOS-P2 |
| Channel Type | P-Channel |
| Drain-Source Voltage (Vds) | -40 V |
| Continuous Drain Current (Id) at Tc=25C | -90 A |
| Power Dissipation (Pd) at Tc=25C | 125 W |
| On-State Resistance Rds(on) typ at Vgs=-10V | 4.3 mOhm |
| Maximum Junction Temperature | 175 C |
| Operating Temperature Range | -55 C to +175 C |
| Package | PG-TO252-3-313 (DPAK) |
| Mounting Type | Surface Mount |
| Number of Pins | 3 (2 + Tab) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
IPD90P04P4L04ATMA2 Pin Configuration
| Pin 1 | Gate — Gate control input (drive to at least -10 V relative to source for full enhancement) |
| Pin 2 | Drain — Drain terminal (internally connected to the metal tab) |
| Pin 3 | Source — Source terminal (reference for gate drive) |
| Pin Tab | Drain (Tab) — Exposed metal tab serves as Drain and provides thermal/electrical connection to PCB copper |
Safe Operating Area (DC, Tc=25C)
Typical Applications
IPD90P04P4L04ATMA2 is suitable for 6 applications: Automotive 12V High-Side Load Switch, Reverse-Polarity Protection, Battery Isolation Switch for Energy Storage, LED Lighting Driver Switch (Automotive Headlamp/Tail), Industrial 24V Solenoid/Valve Driver, DC Motor Brake / Direction Switch.
Automotive 12V High-Side Load Switch
The IPD90P04P4L04ATMA2 is well suited to automotive 12 V high-side load switching because its P-channel polarity allows the gate to be driven directly by a ground-referenced microcontroller GPIO or low-side driver - no charge pump or bootstrap network is needed. With -40 V Vds it tolerates 12 V load-dump transients up to ~36 V, and at -90 A continuous it can switch whole ECU power rails. Its 4.3 mOhm Rds(on) keeps conduction loss under 0.4 W at 10 A continuous load, well within the DPAK thermal budget on standard 1 oz copper.
Recommended
Reverse-Polarity Protection
The IPD90P04P4L04ATMA2 functions as a P-channel reverse-polarity protection FET between battery + and the downstream DC bus. With source tied to battery + and drain to the load, the FET is normally on via a pull-down resistor on the gate, but if the battery is reversed the gate is pulled above the source and the FET turns off, blocking current flow. The 4.3 mOhm Rds(on) keeps forward-path loss under 40 mV at 10 A, and the -40 V Vds handles jump-start transients without avalanche breakdown.
Recommended
Battery Isolation Switch for Energy Storage
In 12 V/24 V battery-backed systems and small UPS modules, the IPD90P04P4L04ATMA2 serves as a low-loss battery isolation switch. Its -90 A rating covers peak inverter surge currents, and the 4.3 mOhm on-resistance means even at 30 A continuous discharge the conduction loss is only 3.9 W - manageable on DPAK copper with airflow. AEC-Q101 qualification allows deployment in mobile and stationary battery systems that demand automotive-grade reliability.
Recommended
LED Lighting Driver Switch (Automotive Headlamp/Tail)
The IPD90P04P4L04ATMA2 drives automotive LED lighting strings by PWM-switching the high-side rail through its P-channel drain-source path. Its -90 A continuous rating supports multiple LED strings in parallel, and the 4.3 mOhm Rds(on) minimizes thermal rise on the switch even at 5-10 A LED current. The DPAK package's exposed thermal pad couples directly to the PCB copper pour, enabling fanless thermal design in sealed lamp housings.
Recommended
Industrial 24V Solenoid/Valve Driver
The IPD90P04P4L04ATMA2 PWM-switches 24 V industrial solenoid and proportional valve coils directly from a microcontroller's ground-referenced GPIO. Its -40 V Vds rating comfortably covers the 24 V nominal bus plus inductive flyback spikes clamped below 40 V. The 4.3 mOhm Rds(on) limits continuous dissipation to under 1 W at 15 A coil current, and the AEC-Q101 qualification provides headroom for factory-floor temperature swings and vibration.
Recommended
DC Motor Brake / Direction Switch
The IPD90P04P4L04ATMA2 enables dynamic braking of small DC motors by shorting the motor terminals through the FET on-resistance when the motor is commanded to stop. Its 4.3 mOhm Rds(on) provides a low-impedance brake path that dissipates motor back-EMF energy safely, and the -90 A rating handles the brief regenerative current spikes during braking. The P-channel polarity allows direct high-side braking without an additional driver stage.
Recommended
Recommended Products Summary
Engineering reference data for IPD90P04P4L04ATMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD90P04P405ATMA2 | IPB120P04P4L03ATMA2 | IPD50P04P413ATMA2 | IPD35N10S3L26ATMA2 | IPD30N10S3L34ATMA2 | IPD30N06S2L13ATMA4 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Channel Type | P-Channel | P-Channel | P-Channel | P-Channel | N-Channel | N-Channel | N-Channel |
| Vds Rating | -40 V | -40 V | -40 V | -40 V | -100 V | -100 V | -60 V |
| Continuous Drain Current (Tc=25C) | -90 A | -90 A | -120 A | -50 A | -35 A | -30 A | -30 A |
| Rds(on) typ at Vgs=10V | 4.3 mOhm | 5.5 mOhm | 3.0 mOhm | 13 mOhm | 26 mOhm | 34 mOhm | 13 mOhm |
| Power Dissipation (Tc=25C) | 125 W | 125 W | 136 W | 83 W | 94 W | 94 W | 71 W |
| Automotive Grade (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Approx. Unit Price (qty 1000) | $1.22 | $1.20 | $1.55 | $0.95 | $0.85 | $0.80 | $0.70 |
Key Differentiators
- P-channel polarity enables ground-referenced gate drive without charge pump (vs IPD35N10S3L26ATMA2 (N-channel high-side))
- 4.3 mOhm Rds(on) at -10V Vgs - among lowest in DPAK P-channel class (vs IPD50P04P413ATMA2)
- AEC-Q101 automotive qualification at full -40V Vds rating (vs Non-automotive DPAK P-channel alternatives from smaller vendors)
Design Notes
Estimated: at -10 V Vgs and 4.3 mOhm Rds(on), continuous conduction loss at 30 A is P = I²R = 30² × 0.0043 = 3.87 W. On DPAK with 1 oz copper the theta_JA is ~50 C/W, so the junction temperature rise above ambient is ~194 C - far exceeding the 175 C Tj max. Either de-rate current, use thicker copper (2 oz), or add thermal vias to an inner copper plane to keep Tj below 150 C with safety margin.
Keep the gate-source loop physically small to avoid dv/dt-induced turn-on of the P-channel MOSFET. Place the gate pull-down resistor (typically 10 kOhm) within 5 mm of the gate pin, and route the gate trace over a continuous ground plane. The drain tab copper pour should be at least 100 mm² of 2 oz copper, with thermal vias to inner copper layers to keep junction temperature below the 175 C Tj max under worst-case ambient.
For 12 V high-side switching, the P-channel gate must be pulled to ground (or at least 10 V below source) for full enhancement. A simple open-drain buffer or NPN transistor between gate and ground, controlled by an MCU GPIO, provides fast turn-off (sub-1 us). For PWM dimming of LED strings, the gate driver should be able to sink 1 A peak to charge/discharge the gate quickly - the IPD90P04P4L04ATMA2 has a typical Qg of ~80 nC, so 1 A sink delivers ~80 ns switching time.
Compliance Information
AEC-Q101 (automotive) qualified per Arrow listing and Infineon product page. RoHS compliant per Infineon product page. Halogen-free and lead-free per Infineon's OptiMOS-P2 family documentation.