IPD60N10S412ATMA1 vs IPD50N06S409ATMA2 Comparison

Detailed side-by-side comparison of IPD60N10S412ATMA1 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD60N10S412ATMA1 IPD60N10S412ATMA1 - 100V 60A N-Channel MOSFET | Infineon | Auto

IPD60N10S412ATMA1 - 100V 60A N-Channel MOSFET | Infineon | Auto

IPD60N10S412ATMA1 βœ“ Active

Specification Comparison

Parameter IPD60N10S412ATMA1 IPD50N06S409ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $0.49
Manufacturer Infineon Technologies β€”
Part Number IPD60N10S412ATMA1 β€”
Transistor Type N-Channel MOSFET, Enhancement Mode β€”
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID, TC=25C) 60 A β€”
Power Dissipation (PD, TC=25C) 94 W β€”
RDS(on) Max @ VGS=10V 12.2 mOhm β€”
Operating Junction Temperature -55 C to +175 C -55 Β°C to +175 Β°C
Package PG-TO252-3-313 (DPAK) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (2 + Tab) 3 (2 + Tab)
MSL Level MSL1 (per JEDEC J-STD-020) β€”
Peak Reflow Temperature 260 C β€”
AEC-Q101 Qualification Qualified (Automotive Grade) β€”
RoHS Status Compliant (Green Product) Compliant
Avalanche Tested 100% Avalanche Tested β€”
Halogen-Free Yes (per Infineon definition) β€”
Technology β€” N-Channel MOSFET (OptiMOS)
Continuous Drain Current (ID) at Tc β€” 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V β€” 9 mΞ©
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc β€” 71 W
Automotive Qualification β€” AEC-Q101
Lead-Free / Halogen-Free β€” [DATA_NEEDED]

Datasheets & Resources

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