IPD60N10S412ATMA1 - 100V 60A N-Channel MOSFET | Infineon | Auto
MPN: IPD60N10S412ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.55 | $15.50 |
| 100 | $1.18 | $118.00 |
| 500 | $0.95 | $475.00 |
| 1,000 | $0.82 | $820.00 |
IPD60N10S412ATMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that modulates current flow between its drain and source terminals in response to a gate-source voltage. N-channel enhancement-mode devices such as the IPD60N10S412ATMA1 require a positive gate bias above the threshold voltage to turn on. Within the broader taxonomy, this part is a discrete MOSFET belonging to the power MOSFET family, which itself sits within the field of discrete semiconductors used for power conversion and motor control.
Key differentiators include a 100% avalanche-tested ruggedness rating, AEC-Q101 automotive qualification, and 175 C maximum operating junction temperature, making it well suited to harsh automotive environments. The PG-TO252-3-313 (DPAK) footprint provides a low-profile surface-mount option with a substantial drain tab that doubles as the thermal pad, enabling direct PCB copper heatsinking for medium-power applications. According to the manufacturer datasheet, the device is Green Product compliant (RoHS), halogen-free per Infineon definition, and rated MSL1 to 260 C peak reflow.
The device uses Infineon's OptiMOS-style planar N-channel process, which balances conduction loss with switching speed. The relatively low gate charge and moderate R<sub>DS(on)</sub> make it appropriate for both hard-switched topologies such as buck converters and soft-switched applications including synchronous rectification. The automotive-grade qualification extends its use into 12 V/24 V automotive electrical systems where reliability under thermal cycling and vibration is mandatory.
Typical applications include automotive 12 V and 24 V load switching, DC-DC converter synchronous rectification stages, motor drive H-bridges for small brushed and brushless DC motors, and reverse-battery protection circuits. The combination of low on-resistance and surface-mount packaging suits high-current PCB designs where through-hole TO-220 parts would be too tall or bulky.
When designing with this part, ensure the gate driver can source and sink enough current to quickly charge and discharge the input capacitance, since slow switching edges cause excess switching loss. A 10 kOhm gate-source resistor is recommended to prevent unwanted turn-on from dv/dt-induced Miller coupling.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IPD60N10S412ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD60N10S412ATMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, Technology, Drain-Source Voltage (VDS), MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPD60N10S4L12ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IPD65R380E6ATMA1
✅ Drop-In✓ In Stock
$0.65 / Unit
View Datasheet →IPC50N04S5L5R5ATMA1
✅ Drop-In✓ In Stock
$0.36 / Unit
View Datasheet →BSC019N04LSTATMA1
✅ Drop-In✓ In Stock
$1.21 / Unit
View Datasheet →IPD50N06S409ATMA2
✅ Drop-In✓ In Stock
$0.49 / Unit
View Datasheet →IAUC120N06S5L015ATMA1
✅ Drop-In✓ In Stock
$0.92 / Unit
View Datasheet →IPD60N10S412ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPD60N10S412ATMA1 |
| Transistor Type | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, TC=25C) | 60 A |
| Power Dissipation (PD, TC=25C) | 94 W |
| RDS(on) Max @ VGS=10V | 12.2 mOhm |
| Operating Junction Temperature | -55 C to +175 C |
| Package | PG-TO252-3-313 (DPAK) |
| Mounting Type | Surface Mount |
| Pin Count | 3 (2 + Tab) |
| MSL Level | MSL1 (per JEDEC J-STD-020) |
| Peak Reflow Temperature | 260 C |
| AEC-Q101 Qualification | Qualified (Automotive Grade) |
| RoHS Status | Compliant (Green Product) |
| Avalanche Tested | 100% Avalanche Tested |
| Halogen-Free | Yes (per Infineon definition) |
IPD60N10S412ATMA1 Pin Configuration
| Pin 1 | Gate — Gate control input - drive to 10V to fully enhance the channel |
| Pin 2 | Drain — Power drain terminal - electrically common with the tab |
| Pin 3 | Source — Source terminal - return path for gate drive and load |
| Pin Tab | Drain — Drain tab on package bottom - solder to copper pad for thermal dissipation and electrical drain connection |
Safe Operating Area (DC)
Typical Applications
IPD60N10S412ATMA1 is suitable for 6 applications: Automotive 12V Load Switching, 24V Truck and Industrial Bus Switching, DC-DC Synchronous Rectifier (Low-Side), Brushed DC Motor Drive H-Bridge, Reverse-Battery Protection Circuit, Solid-State Relay (SSR) Output Stage.
Automotive 12V Load Switching
The IPD60N10S412ATMA1 is purpose-built for automotive 12V load switching thanks to its 100V VDS rating that comfortably tolerates 12V battery transients including load-dump pulses up to 35V. With 12.2 mOhm R<sub>DS(on)</sub> at VGS=10V, conduction loss at 20A continuous load is only 4.9W, easily handled by the DPAK thermal pad without external heatsinks. AEC-Q101 qualification ensures reliability under the thermal-cycling and vibration stresses of underhood and chassis-mounted electronic control units. Used in body control modules for driving lamps, solenoids, and motors.
Recommended
24V Truck and Industrial Bus Switching
The 100V VDS rating of the IPD60N10S412ATMA1 suits 24V truck and industrial-bus power systems where transient voltages can reach 60V during alternator load-dump events. At 24V nominal and 30A load the part dissipates about 11W, manageable with 1 square inch of copper on a 2oz PCB. AEC-Q101 qualification, 175 C junction rating, and 100% avalanche testing combine to provide the ruggedness demanded by commercial-vehicle applications including HVAC blowers, fuel pumps, and hydraulic valves.
Recommended
DC-DC Synchronous Rectifier (Low-Side)
The IPD60N10S412ATMA1 works as a low-side synchronous rectifier in non-isolated buck converters operating up to 36V input. Its 12.2 mOhm R<sub>DS(on)</sub> minimizes body-diode conduction loss when paired with the high-side control switch, while the 100V rating provides ample margin for ringing on the switch node. At 100 kHz switching frequency the part's gate charge supports efficient hard-switched operation. Automotive qualification extends its use to 12V/24V point-of-load converters in vehicle ECUs.
Recommended
Brushed DC Motor Drive H-Bridge
In an H-bridge configuration for brushed DC motors up to 30A continuous, the IPD60N10S412ATMA1 provides the four switching legs needed for bidirectional PWM control. Its 12.2 mOhm R<sub>DS(on)</sub> keeps bridge losses manageable at high duty cycles, while the 100V VDS rating handles the inductive kick-back of automotive motors. The surface-mount DPAK package enables compact motor-control PCB designs that fit inside transmission housings and electronic power steering units. AEC-Q101 qualification supports safety-critical chassis applications.
Recommended
Reverse-Battery Protection Circuit
The IPD60N10S412ATMA1 makes an effective reverse-battery protection switch when placed in the high-side return path with a P-channel companion or low-side N-channel arrangement. At 100V VDS it tolerates 24V jump-start events and load-dump transients far in excess of normal 12V/24V operation. The 60A continuous current rating supports starter-motor auxiliaries and high-current accessory circuits. AEC-Q101 qualification and -55C to 175C operating range suit underhood deployment across passenger and commercial vehicle platforms.
Recommended
Solid-State Relay (SSR) Output Stage
The IPD60N10S412ATMA1 serves as the output switch in automotive and industrial solid-state relays replacing mechanical contactors. Its 60A current rating handles heater loads, lighting arrays, and motor windings, while 100V VDS provides transient immunity in 12V/24V/48V systems. The 12.2 mOhm on-resistance results in only 0.7V drop at 60A versus several volts across mechanical contacts, reducing thermal load. Long-term reliability exceeds mechanical relays by orders of magnitude with no contact arcing or bounce.
Recommended
Recommended Products Summary
Engineering reference data for IPD60N10S412ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPD60N10S4L12ATMA1 | IPC50N04S5L5R5ATMA1 | BSC019N04LSTATMA1 | IPD50N06S409ATMA2 | IAUC120N06S5L015ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same | PG-TO252-3-313 (DPAK) - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 40 V | 40 V | 60 V | 60 V |
| RDS(on) Max @ VGS=10V | 12.2 mOhm | 12.2 mOhm | 5.5 mOhm | 1.9 mOhm | 9 mOhm | 1.5 mOhm |
| Gate Drive Voltage | 10 V (standard) | 4.5 V (logic-level) | 10 V | 10 V | 10 V | 10 V |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Key Differentiators
- Standard 10V gate drive matches typical automotive gate drivers (vs IPD60N10S4L12ATMA1)
- 100V VDS provides generous transient margin for 24V systems (vs IPC50N04S5L5R5ATMA1)
- 60A continuous current rating supports high-power loads without paralleling (vs BSC019N04LSTATMA1)
Design Notes
Estimated: At 24V input and 30A continuous load switching, the IPD60N10S412ATMA1 dissipates approximately 11W (24V x 30A x 0.015 duty-cycle losses plus R<sub>DS(on)</sub>^2 x I^2). With DPAK theta_JA of 50 C/W on 1 square inch of 2oz copper, junction temperature rises about 550C above ambient - clearly exceeding 175 C maximum. At 30A continuous, the part requires at least 3 square inches of copper heatsink area or forced air cooling. For sustained 60A operation, an external heatsink is mandatory.
The DPAK thermal pad must be soldered to a copper pour area of at least 1 square inch (645 mm^2) to achieve the rated 94 W dissipation. Use thermal vias under the pad to conduct heat to internal copper planes or bottom-side heatsink layers. Place input and output capacitors close to the drain and source pins to minimize parasitic inductance that causes voltage spikes exceeding the 100V VDS rating during turn-off.
Do not operate this part with a 3.3V or 5V gate signal - it requires 10V VGS for full enhancement and rated R<sub>DS(on)</sub>. At lower gate voltages the channel is only partially on, leading to excessive conduction loss and thermal runaway. Use a dedicated gate driver IC (such as the 1EDN7136UXTSA1) or bootstrap circuit to provide the required gate voltage. Also, never exceed avalanche energy ratings during inductive switching - if unclamped inductive loads are present, add a flyback diode or TVS clamp.
Route the high-current drain and source paths on wide copper pours (at least 50 mils for 30A). Keep the gate drive trace short and surrounded by source-side copper to minimize parasitic gate-drain capacitance coupling that causes Miller-effect turn-on. Place the gate-source resistor (typically 10 kOhm) physically close to the gate pin. Avoid routing sensitive analog signals over the switching node to prevent capacitive injection.
Compliance Information
AEC-Q101 automotive qualification (AEC-Q100 family for discrete semiconductors). Green Product compliant per Infineon definition. Halogen-free per IEC 61249-2-21. MSL1 per JEDEC J-STD-020 supports 260C peak reflow.
