IPD60N10S412ATMA1 vs IPD65R380E6ATMA1 Comparison
Detailed side-by-side comparison of IPD60N10S412ATMA1 by Infineon and IPD65R380E6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD60N10S412ATMA1 - 100V 60A N-Channel MOSFET | Infineon | Auto
IPD60N10S412ATMA1 β ActiveInfineon
IPD65R380E6ATMA1 - 650V CoolMOS E6 MOSFET 380mΞ© 10.6A | Infineon
IPD65R380E6ATMA1 β ActiveSpecification Comparison
| Parameter | IPD60N10S412ATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPD60N10S412ATMA1 | β |
| Transistor Type | N-Channel MOSFET, Enhancement Mode | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, TC=25C) | 60 A | β |
| Power Dissipation (PD, TC=25C) | 94 W | β |
| RDS(on) Max @ VGS=10V | 12.2 mOhm | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3 (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (2 + Tab) | β |
| MSL Level | MSL1 (per JEDEC J-STD-020) | 1 |
| Peak Reflow Temperature | 260 C | β |
| AEC-Q101 Qualification | Qualified (Automotive Grade) | β |
| RoHS Status | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% Avalanche Tested | β |
| Halogen-Free | Yes (per Infineon definition) | β |
| Series | β | CoolMOSβ’ E6 |
| Technology | β | Superjunction (CoolMOSβ’) |
| Drain-Source Voltage (V_DS) | β | 650 V |
| Continuous Drain Current (I_D) at T_C | β | 10.6 A |
| R_DS(on) max at V_GS=10V | β | 380 mΞ© |
| R_DS(on) test conditions | β | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | β | Β±20 V |
| Gate Threshold Voltage (V_GS(th)) | β | 3.5 V typ |
| Gate Charge (Q_G) | β | 39 nC at 10 V |
| Input Capacitance (C_iss) | β | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | β | 83 W |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C |