IPD60R145CFD7ATMA1 vs IPL60R060CFD7AUMA1 Comparison
Detailed side-by-side comparison of IPD60R145CFD7ATMA1 by Infineon and IPL60R060CFD7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD60R145CFD7ATMA1 - 600V 16A 145mOhm CoolMOS CFD7 MOSFET | Infineon
IPD60R145CFD7ATMA1 β ActiveInfineon
IPL60R060CFD7AUMA1
IPL60R060CFD7AUMA1 - 600V CoolMOS CFD7 MOSFET, 60mΞ© | Infineon
IPL60R060CFD7AUMA1 β ActiveSpecification Comparison
| Parameter | IPD60R145CFD7ATMA1 | IPL60R060CFD7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $4.03 |
| FET Type | N-Channel | β |
| Technology | CoolMOS CFD7 (superjunction) | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 600 V | β |
| Continuous Drain Current (I<sub>D</sub>) | 16 A (T<sub>C</sub> = 25C) | β |
| On-Resistance R<sub>DS(on)</sub> max | 145 mOhm | β |
| Power Dissipation (P<sub>D</sub>) | 83 W (T<sub>C</sub> = 25C) | β |
| Gate Threshold Voltage V<sub>GS(th)</sub> | [DATA_NEEDED: Vth typical/min/max] | β |
| Package | TO-252AA (DPAK) surface mount | PG-VSON-4-1 (Surface Mount) |
| Body Diode | Integrated fast body diode (low Q<sub>rr</sub>) | β |
| Operating Temperature | -55C to +150C (junction) | β |
| Mounting Type | Surface Mount (DPAK, 3-pin + tab) | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Series | CoolMOS CFD7 | CoolMOSβ’ CFD7 |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL Level] |
| RoHS Status | Compliant | Compliant |
| Target Application | ZVS / LLC resonant converters, soft switching | β |
| Manufacturer | β | Infineon Technologies |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | β | 600 V |
| Continuous Drain Current (I_D, Tc) | β | 40 A |
| Power Dissipation (P_D, Tc) | β | 219 W |
| R_DS(on) (max) at V_GS = 10 V | β | 60 mΞ© |
| R_DS(on) (typ, datasheet) | β | 48 mΞ© |
| Gate Charge (Q_G, typ) at V_GS = 10 V | β | 79 nC |
| Input Capacitance (C_iss) | β | 3193 pF |
| Output Capacitance (C_oss) | β | 62 pF |
| Gate-Source Voltage (V_GS) | β | Β±20 V (max) |
| Gate Threshold Voltage (V_GS(th), typ) | β | 4.5 V |
| Operating Temperature Range | β | -40 Β°C to +150 Β°C |