IPL60R060CFD7AUMA1 - 600V CoolMOS CFD7 MOSFET, 60mΩ | Infineon
MPN: IPL60R060CFD7AUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $7.2 | $7.20 |
| 10 | $6.48 | $64.80 |
| 100 | $5.76 | $576.00 |
| 500 | $5.18 | $2,590.00 |
| 1,000 | $4.6 | $4,600.00 |
| 3,000 | $4.03 | $12,090.00 |
IPL60R060CFD7AUMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch used to convert and regulate electrical power in switching-mode power supplies (SMPS), motor drives, and power-factor-correction (PFC) stages. Within the broader taxonomy, the IPL60R060CFD7 sits as: MOSFET -> power MOSFET -> high-voltage superjunction MOSFET -> CoolMOS family -> Power Management semiconductor. Its low on-state resistance and fast body diode make it ideal for the primary side of telecom rectifiers, server power supplies, and industrial welding inverters.
Key features include an integrated fast body diode for hard-commutation robustness, ultra-low reverse-recovery charge (Q_rr) for low-loss ZVS operation, optimized gate charge (Q_G,typ = 79 nC at V_GS = 10 V) for reduced driver losses, and a 4.5 V gate-threshold rating for standard MOSFET gate-drive IC compatibility. The CFD7 generation succeeds the CFD2 platform with reduced switching losses and improved EMI behavior in resonant converter applications.
Technically, the device utilizes charge-compensation superjunction cell architecture, achieving a figure-of-merit (FOM = R_DS(on) × Q_G) that is markedly lower than planar MOSFETs at the same voltage class. This translates into higher system efficiency in the 500 W to 3 kW power-conversion range, where every percentage-point of efficiency gain translates to substantial thermal and energy savings.
Typical applications include server and telecom switched-mode power supplies (SMPS), photovoltaic inverters, uninterruptible power supplies (UPS), electric-vehicle charging stations, induction-heating equipment, and industrial welding power stages. Its AEC-Q101-compatible platform also makes it suitable for e-mobility onboard chargers.
When designing with this device, observe the V_GS(th) maximum of 3.5 V for logic-level gate drives; ensure the gate-drive stage delivers at least +10 V for full enhancement. PCB layout must minimize the high-frequency switching-loop inductance to limit voltage overshoot, and the exposed pad of the PG-VSON-4-1 package must be soldered to a sufficiently large copper pour for thermal dissipation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers an actionable reference for selecting and laying out the IPL60R060CFD7AUMA1 in high-voltage converter designs.
Drop-in alternatives for IPL60R060CFD7AUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPL60R060CFD7AUMA1 (same form factor and footprint) — differing in Series, Technology, Mounting Type, Package, Drain-Source Voltage (VDS).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPL60R065CFD7
✅ Drop-In📋 Reference alternative (not in catalog)
IPL65R070C7AUMA1
✅ Drop-In✓ In Stock
$1.68 / Unit
View Datasheet →IPD60R210PFD7SAUMA1
✅ Drop-In✓ In Stock
$0.54 / Unit
View Datasheet →IPD60R145CFD7ATMA1
✅ Drop-In✓ In Stock
$1.05 / Unit
View Datasheet →IPL60R060CFD7AUMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ CFD7 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | 600 V |
| Continuous Drain Current (I_D, Tc) | 40 A |
| Power Dissipation (P_D, Tc) | 219 W |
| R_DS(on) (max) at V_GS = 10 V | 60 mΩ |
| R_DS(on) (typ, datasheet) | 48 mΩ |
| Gate Charge (Q_G, typ) at V_GS = 10 V | 79 nC |
| Input Capacitance (C_iss) | 3193 pF |
| Output Capacitance (C_oss) | 62 pF |
| Gate-Source Voltage (V_GS) | ±20 V (max) |
| Gate Threshold Voltage (V_GS(th), typ) | 4.5 V |
| Operating Temperature Range | -40 °C to +150 °C |
| Package | PG-VSON-4-1 (Surface Mount) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
IPL60R060CFD7AUMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate drive input; connect to gate driver output, V_GS drive = +10 V to +15 V for full enhancement |
| Pin 2 | Drain — Main power terminal; high-voltage DC bus up to 600 V; PCB thermal pad provides main heat-dissipation path |
| Pin 3 | Source — Power return terminal; Kelvin-source connection recommended for gate-drive return |
| Pin 4 | Drain (Thermal Pad) — Exposed thermal pad electrically tied to Drain; must be soldered to PCB copper pour for heat dissipation |
Safe Operating Area (DC) - IPL60R060CFD7AUMA1
Typical Applications
IPL60R060CFD7AUMA1 is suitable for 6 applications: Telecom and Server SMPS Primary Side, Photovoltaic String Inverter, Uninterruptible Power Supply (UPS), EV Onboard Charger and Industrial Welding, Phase-Shift Full-Bridge (ZVS) Converter, Induction Heating Cooktop.
Telecom and Server SMPS Primary Side
The IPL60R060CFD7AUMA1's 600 V rating, 60 mΩ max R_DS(on), and 40 A continuous drain current make it ideal for the primary-side switch of a 1-3 kW telecom or server switched-mode power supply. With optimized Q_G = 79 nC at V_GS = 10 V and integrated fast body diode, it handles hard-commutation dead-time in the LLC half-bridge with low reverse-recovery loss, enabling >96% peak efficiency in 80 PLUS Titanium-class designs. The PG-VSON-4-1 surface-mount footprint and 219 W power dissipation rating allow high power density on standard FR-4 PCBs with adequate copper pour.
Recommended
Photovoltaic String Inverter
In photovoltaic string inverters operating at 600 V DC bus voltage, the IPL60R060CFD7AUMA1 serves as the high-side or low-side switch of the DC-AC bridge. Its 60 mΩ R_DS(on) minimizes conduction loss during the 50/60 Hz line-cycle switching, while the fast body diode reduces dead-time losses during zero-crossing events. The CFD7 platform's optimized reverse-recovery behavior ensures low EMI in the 16-100 kHz switching range, meeting conducted-emission standards such as EN 55011 Class B without extensive filtering.
Recommended
Uninterruptible Power Supply (UPS)
For double-conversion online UPS systems in the 1-10 kW range, the IPL60R060CFD7AUMA1 provides the high-voltage switching element in the PFC boost and DC-DC stages. The 600 V V_DS rating offers ample margin for 230 VAC rectified input (peak ~325 V plus transients), while the 40 A continuous drain current supports continuous full-load operation. The superjunction architecture's low Q_G × R_DS(on) figure-of-merit reduces switching loss, allowing higher switching frequencies and smaller magnetics in the UPS power stage.
Recommended
EV Onboard Charger and Industrial Welding
In electric-vehicle onboard chargers (3.6-22 kW) and industrial welding inverters, the IPL60R060CFD7AUMA1 is qualified for hard-commutation operation thanks to its integrated fast body diode. The 60 mΩ R_DS(on) keeps conduction loss below 1.5% at 25 A continuous, and the 219 W power dissipation envelope supports sustained full-power operation in liquid-cooled modules. Its 4.5 V gate-threshold rating ensures compatibility with standard 12 V gate-drive bootstrap supplies used in electric-vehicle traction inverters.
Recommended
Phase-Shift Full-Bridge (ZVS) Converter
The IPL60R060CFD7AUMA1 is specifically optimized for phase-shift full-bridge zero-voltage-switching converters used in 1-5 kW telecom rectifiers. The CFD7 generation's low Q_rr and soft body-diode reverse-recovery characteristics eliminate the need for external snubbers, simplifying the bridge layout. The 79 nC typical gate charge at 10 V reduces driver-side losses, while the PG-VSON-4-1 package's low thermal resistance allows 50 A peak operation without exceeding the 150 °C junction limit when paired with proper PCB cooling.
Recommended
Induction Heating Cooktop
In residential and commercial induction-heating cooktops operating at 20-100 kHz, the IPL60R060CFD7AUMA1 serves as the resonant half-bridge switch driving the induction coil. The fast body diode and low E_oss (output capacitance stored energy) reduce hard-switching losses at zero-voltage transitions, while the 600 V rating accommodates rectified 230 VAC mains with full transient margin. The PG-VSON-4-1 surface-mount package enables compact cooktop electronics with high power density above 3 kW/L.
Recommended
Recommended Products Summary
Engineering reference data for IPL60R060CFD7AUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPL60R065CFD7 | IPL65R070C7AUMA1 | IPD60R210PFD7SAUMA1 | IPD60R145CFD7ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-VSON-4-1 | PG-VSON-4-1 - same | PG-VSON-4-1 - same | PG-VSON-4-1 - same | PG-VSON-4-1 - same |
| V_DS (Drain-Source Voltage) | 600 V | 600 V | 650 V | 600 V | 600 V |
| Continuous Drain Current (Tc) | 40 A | 38 A | 32 A | 14 A | 18 A |
| R_DS(on) max at V_GS = 10 V | 60 mΩ | 65 mΩ | 70 mΩ | 210 mΩ | 145 mΩ |
| Power Dissipation (Tc) | 219 W | 208 W | 195 W | 119 W | 150 W |
| Fast Body Diode | Yes (CFD7) | Yes (CFD7) | No (C7 family) | Yes (CFD7) | Yes (CFD7) |
| Primary Topology Optimization | ZVS / LLC resonant | ZVS / LLC resonant | Hard-switching PFC | ZVS / LLC resonant | ZVS / LLC resonant |
Key Differentiators
- Lowest R_DS(on) in 600 V CoolMOS CFD7 VSON-4 family (vs IPD60R210PFD7SAUMA1)
- Integrated fast body diode for hard commutation (vs IPL65R070C7AUMA1)
- 650 V V_DS upgrade path on same footprint (vs IPL65R070C7AUMA1)
Design Notes
At maximum continuous drain current of 40 A and R_DS(on) of 60 mΩ, conduction loss reaches approximately 96 W (P = I² × R_DS(on)). The PG-VSON-4-1 package's exposed thermal pad must be soldered to a copper pour of at least 25 mm × 25 mm on a 4-layer FR-4 PCB to maintain junction temperature below 125 °C at 25 °C ambient. Without adequate copper, the device will thermally limit and derate. Estimated: based on I²R loss with thermal pad soldered to 25x25 mm copper pour on 1 oz 4-layer FR-4 (typical θ_JA ~ 50 °C/W).
Minimize the high-frequency switching-loop inductance by keeping the drain-source loop area under 1 cm². Use wide copper pours (at least 2 mm wide) on both top and bottom layers, with multiple vias stitching the drain pad to inner thermal layers. Place the gate-drive bypass capacitor (≥1 µF ceramic) within 5 mm of the gate pin to prevent parasitic gate oscillation. A Kelvin-source connection from pin 3 directly to the gate-driver return improves switching performance.
Do not exceed V_GS = ±20 V (absolute maximum). Apply V_GS = +10 V to +15 V for full enhancement; below 8 V the device may operate in the linear region and overheat. The gate threshold is typically 4.5 V, so a logic-level 5 V drive is insufficient - use a dedicated gate driver IC with at least 10 V output swing. The integrated fast body diode handles hard commutation, but peak reverse-recovery dV/dt should still be limited below 5 kV/µs to avoid EMI issues.
Compliance Information
RoHS and REACH compliance confirmed via distributor listings (LCSC, JLCPCB). AEC-Q101 platform base but not officially AEC-Q100 qualified - verify with Infineon for automotive applications. Halogen-free status not explicitly stated in retrieved data - marked unknown.
